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5961-00-999-9597
20 Products
C5FX7
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961009999597
NSN
5961-00-999-9597
MFG
LOCKHEED MARTIN CORPORATION DBA MS2 DIV MS2 RADAR SYSTEMS
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
10924796
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009999828
NSN
5961-00-999-9828
MFG
U S ARMY TANK AUTOMOTIVE COMMAND AMSTA-IM-MM
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL AND CERAMIC
MANUFACTURERS CODE: 19207
MFR SOURCE CONTROLLING REFERENCE: 10924796
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.750 INCHES
OVERALL LENGTH: 3.593 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
429RC70
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009999828
NSN
5961-00-999-9828
MFG
POWEREX INC
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL AND CERAMIC
MANUFACTURERS CODE: 19207
MFR SOURCE CONTROLLING REFERENCE: 10924796
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.750 INCHES
OVERALL LENGTH: 3.593 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
507C613H70
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009999828
NSN
5961-00-999-9828
507C613H70
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009999828
NSN
5961-00-999-9828
MFG
WESTINGHOUSE ELECTRIC CORP SEMICONDUCTOR DIV
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL AND CERAMIC
MANUFACTURERS CODE: 19207
MFR SOURCE CONTROLLING REFERENCE: 10924796
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.750 INCHES
OVERALL LENGTH: 3.593 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
J5C3S
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009999828
NSN
5961-00-999-9828
MFG
EDAL INDUSTRIES INC.
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL AND CERAMIC
MANUFACTURERS CODE: 19207
MFR SOURCE CONTROLLING REFERENCE: 10924796
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.750 INCHES
OVERALL LENGTH: 3.593 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
705C
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009999829
NSN
5961-00-999-9829
MFG
WESTINGHOUSE ELECTRIC CORP SEMICONDUCTOR DIV
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
3E4850-66-0001
TRANSISTOR
NSN, MFG P/N
5961010030356
NSN
5961-01-003-0356
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
019-004931
TRANSISTOR
NSN, MFG P/N
5961010030576
NSN
5961-01-003-0576
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV MULTIPLE
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT-DARLINGTON CONNECTED
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.245 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 26916-093-003569 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN
Related Searches:
U2T101
TRANSISTOR
NSN, MFG P/N
5961010030576
NSN
5961-01-003-0576
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT-DARLINGTON CONNECTED
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.245 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 26916-093-003569 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN
Related Searches:
U2T1048
TRANSISTOR
NSN, MFG P/N
5961010030576
NSN
5961-01-003-0576
MFG
API ELECTRONICS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT-DARLINGTON CONNECTED
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.245 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 26916-093-003569 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN
Related Searches:
BAM120
TRANSISTOR
NSN, MFG P/N
5961010030580
NSN
5961-01-003-0580
MFG
RF PRODUCTS INC
Description
CURRENT RATING PER CHARACTERISTIC: 9.00 AMPERES NOMINAL COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: BAM120
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: EMITTER
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC AND METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 0NY61
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL HEIGHT: 0.290 INCHES MAXIMUM
OVERALL LENGTH: 0.290 INCHES MAXIMUM
OVERALL WIDTH: 0.510 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 100.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 FERRULE
THE MANUFACTURERS DATA:
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 65.0 NOMINAL COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN_!
Related Searches:
SD1019-1-2S0ECERAMIC
TRANSISTOR
NSN, MFG P/N
5961010030580
NSN
5961-01-003-0580
MFG
DAYTON METAL PRODUCTS CO
Description
CURRENT RATING PER CHARACTERISTIC: 9.00 AMPERES NOMINAL COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: BAM120
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: EMITTER
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC AND METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 0NY61
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL HEIGHT: 0.290 INCHES MAXIMUM
OVERALL LENGTH: 0.290 INCHES MAXIMUM
OVERALL WIDTH: 0.510 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 100.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 FERRULE
THE MANUFACTURERS DATA:
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 65.0 NOMINAL COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN_!
Related Searches:
3E4850-28-0002
TRANSISTOR
NSN, MFG P/N
5961010030581
NSN
5961-01-003-0581
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
DESIGN CONTROL REFERENCE: 3E4850-28-0002
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: BASE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 73030
OVERALL HEIGHT: 0.450 INCHES NOMINAL
OVERALL LENGTH: 1.647 INCHES NOMINAL
OVERALL WIDTH: 1.050 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN
THE MANUFACTURERS DATA:
Related Searches:
019-004943
TRANSISTOR
NSN, MFG P/N
5961010030584
NSN
5961-01-003-0584
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV MULTIPLE
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MANUFACTURERS CODE: 26916
MFR SOURCE CONTROLLING REFERENCE: 019-004943
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -100.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND -100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND -4.0 MAXIMUM EMITTER TO BASE, RMS
Related Searches:
2N5679
TRANSISTOR
NSN, MFG P/N
5961010030584
NSN
5961-01-003-0584
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MANUFACTURERS CODE: 26916
MFR SOURCE CONTROLLING REFERENCE: 019-004943
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -100.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND -100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND -4.0 MAXIMUM EMITTER TO BASE, RMS
Related Searches:
019-004944
TRANSISTOR
NSN, MFG P/N
5961010030585
NSN
5961-01-003-0585
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV MULTIPLE
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 26916
MFR SOURCE CONTROLLING REFERENCE: 019-004944
OVERALL DIAMETER: 0.370 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
106047-0000
TRANSISTOR
NSN, MFG P/N
5961010030585
NSN
5961-01-003-0585
MFG
SELEX SISTEMI INTEGRATI INC. DIV SELEX SISTEMI INTEGRATI INC.
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 26916
MFR SOURCE CONTROLLING REFERENCE: 019-004944
OVERALL DIAMETER: 0.370 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
2N5681
TRANSISTOR
NSN, MFG P/N
5961010030585
NSN
5961-01-003-0585
MFG
FREESCALE SEMICONDUCTOR INC.
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 26916
MFR SOURCE CONTROLLING REFERENCE: 019-004944
OVERALL DIAMETER: 0.370 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
019-004850
TRANSISTOR
NSN, MFG P/N
5961010030587
NSN
5961-01-003-0587
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV MULTIPLE
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 26916
MFR SOURCE CONTROLLING REFERENCE: 019-004850
OVERALL DIAMETER: 0.370 INCHES NOMINAL
OVERALL HEIGHT: 0.185 INCHES NOMINAL
SPEC/STD CONTROLLING DATA:
Related Searches:
DMS 87-023
TRANSISTOR
NSN, MFG P/N
5961010030587
NSN
5961-01-003-0587
MFG
DLA LAND AND MARITIME
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 26916
MFR SOURCE CONTROLLING REFERENCE: 019-004850
OVERALL DIAMETER: 0.370 INCHES NOMINAL
OVERALL HEIGHT: 0.185 INCHES NOMINAL
SPEC/STD CONTROLLING DATA:
