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5961-01-191-2923
20 Products
709665-2
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011912923
NSN
5961-01-191-2923
709665-2
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011912923
NSN
5961-01-191-2923
MFG
GE AVIATION SYSTEMS LLC DBA GE AVIATION DIV CUSTOMER SERVICES
Description
MATERIAL: ANY ACCEPTABLE
OVERALL HEIGHT: 0.500 INCHES NOMINAL
OVERALL LENGTH: 1.750 INCHES NOMINAL
OVERALL WIDTH: 1.120 INCHES NOMINAL
STYLE DESIGNATOR: 1C RECTANGULAR PRISM
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DMS 87104B
TRANSISTOR
NSN, MFG P/N
5961011913043
NSN
5961-01-191-3043
MFG
DLA LAND AND MARITIME
Description
TRANSISTOR
Related Searches:
SJE1461
TRANSISTOR
NSN, MFG P/N
5961011913043
NSN
5961-01-191-3043
MFG
FREESCALE SEMICONDUCTOR INC.
Description
TRANSISTOR
Related Searches:
SJE1462
TRANSISTOR
NSN, MFG P/N
5961011913044
NSN
5961-01-191-3044
MFG
FREESCALE SEMICONDUCTOR INC.
Description
TRANSISTOR
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11DQ03
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011913047
NSN
5961-01-191-3047
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
SEMICONDUCTOR DEVICE,DIODE
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PC0605D
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011913049
NSN
5961-01-191-3049
MFG
GE INFRASTRUCTURE SENSING INC. DBA GE SENSING & INSPECTION TECHNOLOGIES
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
05G00050-0216
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011913051
NSN
5961-01-191-3051
05G00050-0216
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011913051
NSN
5961-01-191-3051
MFG
MAGNETEK INC INDUSTRIAL CONTROLS GROUP DIV DBA MAGNETEK
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM REPETITIVE PEAK REVERSE CURRENT AND 60.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL AND GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-5
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 1.250 INCHES
OVERALL LENGTH: 1.000 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
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H64176-19
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011913052
NSN
5961-01-191-3052
MFG
NEI PEEBLES-ELECTRIC PRODUCTS INC
Description
SEMICONDUCTOR DEVICE,DIODE
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SD1547
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011913052
NSN
5961-01-191-3052
MFG
FMC TECHNOLOGIES INC DIV MATERIAL HANDLING SOLUTIONS
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
520/4/97358/000
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011913069
NSN
5961-01-191-3069
520/4/97358/000
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011913069
NSN
5961-01-191-3069
MFG
SIEMENS AIR TRAFFIC MANAGEMENT
Description
COLOR TONE PRODUCED PER SOURCE: RED LENS 1ST LIGHT EMITTING DIODE GREEN LENS 2ND LIGHT EMITTING DIODE
COMPONENT NAME AND QUANTITY: 2 LIGHT EMITTING DIODE
CURRENT RATING PER CHARACTERISTIC: 60.00 MILLIAMPERES MAXIMUM PEAK PULSE CURRENT ALL LIGHT EMITTING DIODE
INCLOSURE MATERIAL: PLASTIC
LENS TRANSPARENCY: TRANSLUCENT ALL LIGHT EMITTING DIODE
LUMINOUS INTENSITY: 1.8 MILLICANDELA NOMINAL ALL LIGHT EMITTING DIODE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.190 INCHES NOMINAL
OVERALL LENGTH: 0.340 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 115.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL LIGHT EMITTING DIODE
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE PHOSPHIDE ALL LIGHT EMITTING DIODE
SPECIAL FEATURES: ALL LIGHT EMITTING DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL LENGTH: 1.410 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERI
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91524257
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011913069
NSN
5961-01-191-3069
91524257
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011913069
NSN
5961-01-191-3069
MFG
THALES
Description
COLOR TONE PRODUCED PER SOURCE: RED LENS 1ST LIGHT EMITTING DIODE GREEN LENS 2ND LIGHT EMITTING DIODE
COMPONENT NAME AND QUANTITY: 2 LIGHT EMITTING DIODE
CURRENT RATING PER CHARACTERISTIC: 60.00 MILLIAMPERES MAXIMUM PEAK PULSE CURRENT ALL LIGHT EMITTING DIODE
INCLOSURE MATERIAL: PLASTIC
LENS TRANSPARENCY: TRANSLUCENT ALL LIGHT EMITTING DIODE
LUMINOUS INTENSITY: 1.8 MILLICANDELA NOMINAL ALL LIGHT EMITTING DIODE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.190 INCHES NOMINAL
OVERALL LENGTH: 0.340 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 115.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL LIGHT EMITTING DIODE
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE PHOSPHIDE ALL LIGHT EMITTING DIODE
SPECIAL FEATURES: ALL LIGHT EMITTING DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL LENGTH: 1.410 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERI
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A1-11-0182
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011913069
NSN
5961-01-191-3069
A1-11-0182
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011913069
NSN
5961-01-191-3069
MFG
ACR ELECTRONICS INC .
Description
COLOR TONE PRODUCED PER SOURCE: RED LENS 1ST LIGHT EMITTING DIODE GREEN LENS 2ND LIGHT EMITTING DIODE
COMPONENT NAME AND QUANTITY: 2 LIGHT EMITTING DIODE
CURRENT RATING PER CHARACTERISTIC: 60.00 MILLIAMPERES MAXIMUM PEAK PULSE CURRENT ALL LIGHT EMITTING DIODE
INCLOSURE MATERIAL: PLASTIC
LENS TRANSPARENCY: TRANSLUCENT ALL LIGHT EMITTING DIODE
LUMINOUS INTENSITY: 1.8 MILLICANDELA NOMINAL ALL LIGHT EMITTING DIODE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.190 INCHES NOMINAL
OVERALL LENGTH: 0.340 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 115.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL LIGHT EMITTING DIODE
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE PHOSPHIDE ALL LIGHT EMITTING DIODE
SPECIAL FEATURES: ALL LIGHT EMITTING DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL LENGTH: 1.410 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERI
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XC-5491
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011913069
NSN
5961-01-191-3069
XC-5491
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011913069
NSN
5961-01-191-3069
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
COLOR TONE PRODUCED PER SOURCE: RED LENS 1ST LIGHT EMITTING DIODE GREEN LENS 2ND LIGHT EMITTING DIODE
COMPONENT NAME AND QUANTITY: 2 LIGHT EMITTING DIODE
CURRENT RATING PER CHARACTERISTIC: 60.00 MILLIAMPERES MAXIMUM PEAK PULSE CURRENT ALL LIGHT EMITTING DIODE
INCLOSURE MATERIAL: PLASTIC
LENS TRANSPARENCY: TRANSLUCENT ALL LIGHT EMITTING DIODE
LUMINOUS INTENSITY: 1.8 MILLICANDELA NOMINAL ALL LIGHT EMITTING DIODE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.190 INCHES NOMINAL
OVERALL LENGTH: 0.340 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 115.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL LIGHT EMITTING DIODE
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE PHOSPHIDE ALL LIGHT EMITTING DIODE
SPECIAL FEATURES: ALL LIGHT EMITTING DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL LENGTH: 1.410 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERI
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4809-0000-005
TRANSISTOR
NSN, MFG P/N
5961011913340
NSN
5961-01-191-3340
MFG
AEROFLEX WICHITA INC.
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-72
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
TRANSFER RATIO: 250.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 20.0 MAXIMUM COLLECTOR TO B
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66382
TRANSISTOR
NSN, MFG P/N
5961011913340
NSN
5961-01-191-3340
MFG
INTERSIL CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-72
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
TRANSFER RATIO: 250.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 20.0 MAXIMUM COLLECTOR TO B
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TRANSISTOR
NSN, MFG P/N
5961011913341
NSN
5961-01-191-3341
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 175.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: REFERENCE AMPLIFIER
III END ITEM IDENTIFICATION: 6625-01-144-4481
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.132 INCHES MAXIMUM
OVERALL LENGTH: 1.070 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 16.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 36.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 4.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
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TRANSISTOR
NSN, MFG P/N
5961011913343
NSN
5961-01-191-3343
MFG
DRANETZ TECHNOLOGIES INC. DBA DRANETZ BMI
Description
CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: 6625-01-144-4481
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.625 INCHES MAXIMUM
OVERALL WIDTH: 0.420 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 60.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.190 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD AND 1 UNTHREADED HOLE
TRANSFER RATIO: 6.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 30.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 M
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169-9667
TRANSISTOR
NSN, MFG P/N
5961011913343
NSN
5961-01-191-3343
MFG
RADIOSPARES SAS
Description
CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: 6625-01-144-4481
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.625 INCHES MAXIMUM
OVERALL WIDTH: 0.420 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 60.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.190 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD AND 1 UNTHREADED HOLE
TRANSFER RATIO: 6.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 30.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 M
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MJE13005
TRANSISTOR
NSN, MFG P/N
5961011913343
NSN
5961-01-191-3343
MFG
SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS
Description
CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: 6625-01-144-4481
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.625 INCHES MAXIMUM
OVERALL WIDTH: 0.420 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 60.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.190 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD AND 1 UNTHREADED HOLE
TRANSFER RATIO: 6.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 30.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 M
Related Searches:
1855-0607
TRANSISTOR
NSN, MFG P/N
5961011913344
NSN
5961-01-191-3344
MFG
AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES MAXIMUM DRAIN CURRENT AND 10.00 AMPERES MAXIMUM OFF-STATE CURRENT, PEAK
III END ITEM IDENTIFICATION: 6625-01-144-4481
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.620 INCHES MAXIMUM
OVERALL WIDTH: 0.405 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 75.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 500.0 MAXIMUM DRAIN TO GATE VOLTAGE
