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5961-01-398-4882
20 Products
4045529P1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013984882
NSN
5961-01-398-4882
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
SEMICONDUCTOR DEVICE,DIODE
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ND4198
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013984933
NSN
5961-01-398-4933
MFG
NEC ELECTRONICS USA INC ELECTRONIC ARRAYS DIV
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
91011-03TX
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013986217
NSN
5961-01-398-6217
91011-03TX
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013986217
NSN
5961-01-398-6217
MFG
DLA LAND AND MARITIME
Description
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: THREADED STUD AND SLOT
OVERALL LENGTH: 0.858 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB W/SCREW
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
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UES706HR
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013986217
NSN
5961-01-398-6217
MFG
MICRO USPD INC
Description
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: THREADED STUD AND SLOT
OVERALL LENGTH: 0.858 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB W/SCREW
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
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G390366S2
TRANSISTOR
NSN, MFG P/N
5961013986222
NSN
5961-01-398-6222
MFG
ITT CORPORATION DBA ITT GILFILLAN
Description
TRANSISTOR
Related Searches:
PH8900-2
TRANSISTOR
NSN, MFG P/N
5961013986222
NSN
5961-01-398-6222
MFG
M/A-COM TECHNOLOGY SOLUTIONS INC. DBA COMMERCIAL ELECTRONICS PHO DIV POWER HYBRIDS OPERATION
Description
TRANSISTOR
Related Searches:
81C637M001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013986247
NSN
5961-01-398-6247
81C637M001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013986247
NSN
5961-01-398-6247
MFG
SELEX SISTEMI INTEGRATI SPA
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
QPND4185
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013986247
NSN
5961-01-398-6247
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
BD 530
TRANSISTOR
NSN, MFG P/N
5961013988179
NSN
5961-01-398-8179
MFG
FREESCALE SEMICONDUCTOR INC.
Description
TRANSISTOR
Related Searches:
PC0600DSPECIAL
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013988204
NSN
5961-01-398-8204
PC0600DSPECIAL
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013988204
NSN
5961-01-398-8204
MFG
AEROFLEX WICHITA INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
352-1058-020
TRANSISTOR
NSN, MFG P/N
5961013988211
NSN
5961-01-398-8211
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
III END ITEM IDENTIFICATION: SEA HAWK HELICOPTER, MODEL S70B-2
Related Searches:
JANTX1N4135
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013988218
NSN
5961-01-398-8218
JANTX1N4135
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013988218
NSN
5961-01-398-8218
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 3.80 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4135-1
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/435
OVERALL DIAMETER: 0.055 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/435 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 NOMINAL NOMINAL REGULATOR VOLTAGE
Related Searches:
JANTXV1N4623-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013988266
NSN
5961-01-398-8266
JANTXV1N4623-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013988266
NSN
5961-01-398-8266
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 77.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N4623-1
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/435
OVERALL DIAMETER: 0.055 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/435 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.3 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOL
Related Searches:
204-0082-012
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013988295
NSN
5961-01-398-8295
204-0082-012
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013988295
NSN
5961-01-398-8295
MFG
ROCKWELL COLLINS INC. DIV GOVERNMENT SYSTEMS - DALLAS
Description
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.145 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 95105-204-0082 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
A5X1119
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013988295
NSN
5961-01-398-8295
MFG
F E I INDUSTRIES INC
Description
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.145 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 95105-204-0082 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MAXIMUM REVERSE VOLTAGE, PEAK
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MA4PH105
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013988295
NSN
5961-01-398-8295
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.145 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 95105-204-0082 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MAXIMUM REVERSE VOLTAGE, PEAK
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BF981
TRANSISTOR
NSN, MFG P/N
5961013988302
NSN
5961-01-398-8302
MFG
PHILIPS SEMICONDUCTORS INC
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 2.7 MILLIMETERS MAXIMUM
OVERALL LENGTH: 17.4 MILLIMETERS MINIMUM
OVERALL WIDTH: 15.0 MILLIMETERS NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
3018652
TRANSISTOR
NSN, MFG P/N
5961013989096
NSN
5961-01-398-9096
MFG
THALES AVIONICS LTD
Description
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-247AC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 5.3 MILLIMETERS MAXIMUM
OVERALL LENGTH: 35.1 MILLIMETERS MAXIMUM
OVERALL WIDTH: 15.9 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 190.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
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IRFP450
TRANSISTOR
NSN, MFG P/N
5961013989096
NSN
5961-01-398-9096
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-247AC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 5.3 MILLIMETERS MAXIMUM
OVERALL LENGTH: 35.1 MILLIMETERS MAXIMUM
OVERALL WIDTH: 15.9 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 190.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
SIHFP450
TRANSISTOR
NSN, MFG P/N
5961013989096
NSN
5961-01-398-9096
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-247AC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 5.3 MILLIMETERS MAXIMUM
OVERALL LENGTH: 35.1 MILLIMETERS MAXIMUM
OVERALL WIDTH: 15.9 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 190.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
