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5961-01-215-4064
20 Products
4028796-50
TRANSISTOR
NSN, MFG P/N
5961012154064
NSN
5961-01-215-4064
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE - ALBUQUERQUE
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM BASE CURRENT, DC AND 0.20 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: LEADS GOLD
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 130.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN A
Related Searches:
66940
TRANSISTOR
NSN, MFG P/N
5961012154064
NSN
5961-01-215-4064
MFG
INTERSIL CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM BASE CURRENT, DC AND 0.20 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: LEADS GOLD
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 130.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN A
Related Searches:
71SP174
TRANSISTOR
NSN, MFG P/N
5961012154064
NSN
5961-01-215-4064
MFG
SOLITRON DEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM BASE CURRENT, DC AND 0.20 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: LEADS GOLD
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 130.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN A
Related Searches:
10631-36
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012154067
NSN
5961-01-215-4067
MFG
MICROSEMI CORP-MASSACHUSETTS DBA MICROSEMI-LOWELL DIV MICROSEMI - LOWELL
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MINIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.122 INCHES MAXIMUM
OVERALL LENGTH: 0.097 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.080 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MINIMUM REVERSE VOLTAGE, DC
Related Searches:
SC5961-0089-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012154067
NSN
5961-01-215-4067
SC5961-0089-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012154067
NSN
5961-01-215-4067
MFG
DRS ICAS, LLC
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MINIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.122 INCHES MAXIMUM
OVERALL LENGTH: 0.097 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.080 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MINIMUM REVERSE VOLTAGE, DC
Related Searches:
2D0020H002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012154472
NSN
5961-01-215-4472
2D0020H002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012154472
NSN
5961-01-215-4472
MFG
NORTHROP GRUMMAN CORP ELECTRONIC SYSTEMS DEFENSIVE SYSTEM DIV
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: PEACEKEEPER IMU
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR CRITICAL HARDNESS ITEM
Related Searches:
2D0020H008
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012154473
NSN
5961-01-215-4473
2D0020H008
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012154473
NSN
5961-01-215-4473
MFG
NORTHROP GRUMMAN CORP ELECTRONIC SYSTEMS DEFENSIVE SYSTEM DIV
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: PEACEKEEPER IMU
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR CRITICAL HARDNESS ITEM
Related Searches:
2D0020H010
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012154474
NSN
5961-01-215-4474
2D0020H010
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012154474
NSN
5961-01-215-4474
MFG
NORTHROP GRUMMAN CORP ELECTRONIC SYSTEMS DEFENSIVE SYSTEM DIV
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: PEACEKEEPER IMU
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR CRITICAL HARDNESS ITEM
Related Searches:
2D0020H011
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012154475
NSN
5961-01-215-4475
2D0020H011
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012154475
NSN
5961-01-215-4475
MFG
NORTHROP GRUMMAN CORP ELECTRONIC SYSTEMS DEFENSIVE SYSTEM DIV
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: PEACEKEEPER IMU
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR CRITICAL HARDNESS ITEM
Related Searches:
2D0020H019
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012154476
NSN
5961-01-215-4476
2D0020H019
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012154476
NSN
5961-01-215-4476
MFG
NORTHROP GRUMMAN CORP ELECTRONIC SYSTEMS DEFENSIVE SYSTEM DIV
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: PEACEKEEPER IMU
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR CRITICAL HARDNESS ITEM
Related Searches:
2D0020H020
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012154477
NSN
5961-01-215-4477
2D0020H020
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012154477
NSN
5961-01-215-4477
MFG
NORTHROP GRUMMAN CORP ELECTRONIC SYSTEMS DEFENSIVE SYSTEM DIV
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: PEACEKEEPER IMU
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR CRITICAL HARDNESS ITEM
Related Searches:
2D0020H022
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012154478
NSN
5961-01-215-4478
2D0020H022
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012154478
NSN
5961-01-215-4478
MFG
NORTHROP GRUMMAN CORP ELECTRONIC SYSTEMS DEFENSIVE SYSTEM DIV
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: PEACEKEEPER IMU
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR CRITICAL HARDNESS ITEM
Related Searches:
2D0020H023
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012154479
NSN
5961-01-215-4479
2D0020H023
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012154479
NSN
5961-01-215-4479
MFG
NORTHROP GRUMMAN CORP ELECTRONIC SYSTEMS DEFENSIVE SYSTEM DIV
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: PEACEKEEPER IMU
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR CRITICAL HARDNESS ITEM
Related Searches:
2D0020H030
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012154480
NSN
5961-01-215-4480
2D0020H030
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012154480
NSN
5961-01-215-4480
MFG
NORTHROP GRUMMAN CORP ELECTRONIC SYSTEMS DEFENSIVE SYSTEM DIV
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: PEACEKEEPER IMU
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR CRITICAL HARDNESS ITEM
Related Searches:
2D0020H034
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012154481
NSN
5961-01-215-4481
2D0020H034
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012154481
NSN
5961-01-215-4481
MFG
NORTHROP GRUMMAN CORP ELECTRONIC SYSTEMS DEFENSIVE SYSTEM DIV
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: PEACEKEEPER IMU
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR CRITICAL HARDNESS ITEM
Related Searches:
2D0020H037
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012154482
NSN
5961-01-215-4482
2D0020H037
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012154482
NSN
5961-01-215-4482
MFG
NORTHROP GRUMMAN CORP ELECTRONIC SYSTEMS DEFENSIVE SYSTEM DIV
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: PEACEKEEPER IMU
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR CRITICAL HARDNESS ITEM
Related Searches:
1-184
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012154625
NSN
5961-01-215-4625
MFG
MOTOROLA INC MOTOROLA AUTOMOTIVE ELECTRONICS
Description
SEMICONDUCTOR DEVICES,UNITIZED
Related Searches:
4028795-50
TRANSISTOR
NSN, MFG P/N
5961012154715
NSN
5961-01-215-4715
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE - ALBUQUERQUE
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM BASE CURRENT, DC AND 0.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: LEADS GOLD
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 130.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AN
Related Searches:
66640
TRANSISTOR
NSN, MFG P/N
5961012154715
NSN
5961-01-215-4715
MFG
INTERSIL CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM BASE CURRENT, DC AND 0.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: LEADS GOLD
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 130.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AN
Related Searches:
91SP471
TRANSISTOR
NSN, MFG P/N
5961012154715
NSN
5961-01-215-4715
MFG
SOLITRON DEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM BASE CURRENT, DC AND 0.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: LEADS GOLD
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 130.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AN
