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5961-00-483-3251
20 Products
2N3251A
TRANSISTOR
NSN, MFG P/N
5961004833251
NSN
5961-00-483-3251
MFG
INKWELL LUMBER CO
Description
MANUFACTURERS CODE: 95542
MFR SOURCE CONTROLLING REFERENCE: 958-019-0001
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
Related Searches:
K26715
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004832095
NSN
5961-00-483-2095
MFG
GE AVIATION SYSTEMS LLC DBA GE AVIATION
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: MOUNTING HARDWARE AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-4
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.405 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
195316-000
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004832109
NSN
5961-00-483-2109
195316-000
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004832109
NSN
5961-00-483-2109
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
COMPONENT NAME AND QUANTITY: 10 SEMICONDUCTOR DEVICE DIODE
FEATURES PROVIDED: GOLD PLATED LEADS AND BURN IN
III END ITEM IDENTIFICATION: P-3C ACFT
MANUFACTURERS CODE: 81413
MFR SOURCE CONTROLLING REFERENCE: 195316-000
SPEC/STD CONTROLLING DATA:
Related Searches:
C5569
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004832109
NSN
5961-00-483-2109
MFG
C O D I CORP DBA CODI SEMICONDUCTOR INC
Description
COMPONENT NAME AND QUANTITY: 10 SEMICONDUCTOR DEVICE DIODE
FEATURES PROVIDED: GOLD PLATED LEADS AND BURN IN
III END ITEM IDENTIFICATION: P-3C ACFT
MANUFACTURERS CODE: 81413
MFR SOURCE CONTROLLING REFERENCE: 195316-000
SPEC/STD CONTROLLING DATA:
Related Searches:
MC9877
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004832109
NSN
5961-00-483-2109
MC9877
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004832109
NSN
5961-00-483-2109
MFG
MICROSEMI CORPORATION
Description
COMPONENT NAME AND QUANTITY: 10 SEMICONDUCTOR DEVICE DIODE
FEATURES PROVIDED: GOLD PLATED LEADS AND BURN IN
III END ITEM IDENTIFICATION: P-3C ACFT
MANUFACTURERS CODE: 81413
MFR SOURCE CONTROLLING REFERENCE: 195316-000
SPEC/STD CONTROLLING DATA:
Related Searches:
200668-702
TRANSISTOR
NSN, MFG P/N
5961004832111
NSN
5961-00-483-2111
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81413
MFR SOURCE CONTROLLING REFERENCE: 200668-702
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL HEIGHT: 0.065 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
2N2605
TRANSISTOR
NSN, MFG P/N
5961004832111
NSN
5961-00-483-2111
MFG
SYLVANIA ELECTRIC PRODUCTS INC SEMICONDUCTOR PRODUCTS DIV
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81413
MFR SOURCE CONTROLLING REFERENCE: 200668-702
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL HEIGHT: 0.065 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
044238
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004832113
NSN
5961-00-483-2113
MFG
SIMMONDS PRECISION PRODUCTS INC. DBA GOODRICH SENSORS AND INTERGRATED SYSTMES
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MICROAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 89305
MFR SOURCE CONTROLLING REFERENCE: 044238
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.110 INCHES MAXIMUM
OVERALL LENGTH: 0.165 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
5M.5532.223.05
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004832113
NSN
5961-00-483-2113
5M.5532.223.05
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004832113
NSN
5961-00-483-2113
MFG
EADS DEUTSCHLAND GMBH -VERTEIDIGUNG UND ZIVILE SYSTEME-
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MICROAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 89305
MFR SOURCE CONTROLLING REFERENCE: 044238
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.110 INCHES MAXIMUM
OVERALL LENGTH: 0.165 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
S1F05-50PIC
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004832113
NSN
5961-00-483-2113
S1F05-50PIC
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004832113
NSN
5961-00-483-2113
MFG
SEMTECH CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MICROAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 89305
MFR SOURCE CONTROLLING REFERENCE: 044238
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.110 INCHES MAXIMUM
OVERALL LENGTH: 0.165 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
S2F
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004832113
NSN
5961-00-483-2113
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MICROAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 89305
MFR SOURCE CONTROLLING REFERENCE: 044238
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.110 INCHES MAXIMUM
OVERALL LENGTH: 0.165 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
033176
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004832124
NSN
5961-00-483-2124
MFG
SIMMONDS PRECISION PRODUCTS INC. DBA GOODRICH SENSORS AND INTERGRATED SYSTMES
Description
CURRENT RATING PER CHARACTERISTIC: 21.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MANUFACTURERS CODE: 89305
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 033176
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS NOMINAL TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
1N965B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004832124
NSN
5961-00-483-2124
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 21.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MANUFACTURERS CODE: 89305
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 033176
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS NOMINAL TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
246008-0911
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004832124
NSN
5961-00-483-2124
246008-0911
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004832124
NSN
5961-00-483-2124
MFG
SYPRIS ELECTRONICS LLC
Description
CURRENT RATING PER CHARACTERISTIC: 21.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MANUFACTURERS CODE: 89305
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 033176
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS NOMINAL TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
48D84805A02
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004832124
NSN
5961-00-483-2124
48D84805A02
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004832124
NSN
5961-00-483-2124
MFG
VENTELO
Description
CURRENT RATING PER CHARACTERISTIC: 21.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MANUFACTURERS CODE: 89305
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 033176
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS NOMINAL TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
195326-000
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961004832127
NSN
5961-00-483-2127
195326-000
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961004832127
NSN
5961-00-483-2127
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
III END ITEM IDENTIFICATION: P-3C AIRCRAFT
MANUFACTURERS CODE: 81413
MFR SOURCE CONTROLLING REFERENCE: 195326-700
OVERALL HEIGHT: 0.500 INCHES MAXIMUM
OVERALL LENGTH: 0.698 INCHES MAXIMUM
OVERALL WIDTH: 0.500 INCHES MAXIMUM
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: SINGLE-PHASE BRIDGE RECTIFIER FORPOWER SUPPLY
Related Searches:
SA65
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961004832127
NSN
5961-00-483-2127
SA65
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961004832127
NSN
5961-00-483-2127
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
III END ITEM IDENTIFICATION: P-3C AIRCRAFT
MANUFACTURERS CODE: 81413
MFR SOURCE CONTROLLING REFERENCE: 195326-700
OVERALL HEIGHT: 0.500 INCHES MAXIMUM
OVERALL LENGTH: 0.698 INCHES MAXIMUM
OVERALL WIDTH: 0.500 INCHES MAXIMUM
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: SINGLE-PHASE BRIDGE RECTIFIER FORPOWER SUPPLY
Related Searches:
UBR18
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961004832127
NSN
5961-00-483-2127
UBR18
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961004832127
NSN
5961-00-483-2127
MFG
MICRO USPD INC
Description
III END ITEM IDENTIFICATION: P-3C AIRCRAFT
MANUFACTURERS CODE: 81413
MFR SOURCE CONTROLLING REFERENCE: 195326-700
OVERALL HEIGHT: 0.500 INCHES MAXIMUM
OVERALL LENGTH: 0.698 INCHES MAXIMUM
OVERALL WIDTH: 0.500 INCHES MAXIMUM
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: SINGLE-PHASE BRIDGE RECTIFIER FORPOWER SUPPLY
Related Searches:
395123-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004832140
NSN
5961-00-483-2140
MFG
EDO CORP DIV EDO CORPORATION ANTENNA PRODUCTS & TECHNOLOGIES
Description
CURRENT RATING PER CHARACTERISTIC: 75.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.056 INCHES MINIMUM AND 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 00752-395123 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE BREAKDOWN VOLTAGE, DC
Related Searches:
366198-3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004832145
NSN
5961-00-483-2145
MFG
EDO CORP DIV EDO CORPORATION ANTENNA PRODUCTS & TECHNOLOGIES
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.120 INCHES NOMINAL
OVERALL LENGTH: 0.092 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.75 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM BREAKDOWN VOLTAGE, DC
