My Quote Request
No products added yet
5961-01-237-2209
20 Products
84-32988-001
TRANSISTOR
NSN, MFG P/N
5961012372209
NSN
5961-01-237-2209
MFG
RAYTHEON E-SYSTEMS INC
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: C-135 ACFT
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL AND ELECTROSTATIC SENSITIVE DEVICE
Related Searches:
IRFF130/883B
TRANSISTOR
NSN, MFG P/N
5961012372209
NSN
5961-01-237-2209
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: C-135 ACFT
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL AND ELECTROSTATIC SENSITIVE DEVICE
Related Searches:
MJ11033
TRANSISTOR
NSN, MFG P/N
5961012373511
NSN
5961-01-237-3511
MFG
GENERAL DYNAMICS C4 SYSTEMS INC.
Description
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.350 INCHES NOMINAL
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.312 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN AND 2 UNTHREADED HOLE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 NOMINAL COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED AND 120.0 NOMINAL COLLECTOR TO BASE VOLTAGE, DC AND 5.0 NOMINAL EMITTER TO BASE VOLTAGE, DC
Related Searches:
105SEB128
TRANSISTOR
NSN, MFG P/N
5961012373512
NSN
5961-01-237-3512
MFG
SOLITRON DEVICES INC.
Description
TRANSISTOR
Related Searches:
7906012-02
TRANSISTOR
NSN, MFG P/N
5961012373512
NSN
5961-01-237-3512
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2
Description
TRANSISTOR
Related Searches:
267834
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012373514
NSN
5961-01-237-3514
267834
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012373514
NSN
5961-01-237-3514
MFG
NAVAL AIR SYSTEMS COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 250.00 MILLIAMPERES MAXIMUM GATE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-9
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.330 INCHES NOMINAL
OVERALL LENGTH: 0.230 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.3 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM KNEE VOLTAGE
Related Searches:
267834-1
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012373514
NSN
5961-01-237-3514
267834-1
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012373514
NSN
5961-01-237-3514
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 250.00 MILLIAMPERES MAXIMUM GATE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-9
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.330 INCHES NOMINAL
OVERALL LENGTH: 0.230 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.3 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM KNEE VOLTAGE
Related Searches:
CA1034
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012373514
NSN
5961-01-237-3514
CA1034
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012373514
NSN
5961-01-237-3514
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 250.00 MILLIAMPERES MAXIMUM GATE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-9
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.330 INCHES NOMINAL
OVERALL LENGTH: 0.230 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.3 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM KNEE VOLTAGE
Related Searches:
SW-1447
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012373514
NSN
5961-01-237-3514
SW-1447
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012373514
NSN
5961-01-237-3514
MFG
GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP
Description
CURRENT RATING PER CHARACTERISTIC: 250.00 MILLIAMPERES MAXIMUM GATE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-9
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.330 INCHES NOMINAL
OVERALL LENGTH: 0.230 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.3 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM KNEE VOLTAGE
Related Searches:
JANTX2N6802
TRANSISTOR
NSN, MFG P/N
5961012374007
NSN
5961-01-237-4007
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 2.50 AMPERES MAXIMUM DRAIN CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N6802
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-205 AF
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/557
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.180 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 25.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/557 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.7
Related Searches:
233959
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012374008
NSN
5961-01-237-4008
MFG
KOHLER CO ENGINE PLANT DIV
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
SW31803
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012374008
NSN
5961-01-237-4008
MFG
C-K POWER PRODUCTS CORP
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
10673229-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012374158
NSN
5961-01-237-4158
10673229-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012374158
NSN
5961-01-237-4158
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 37.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
III END ITEM IDENTIFICATION: LAV, ANTI-TANK; GUIDED MISSILE, INTERCEPT
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.240 INCHES NOMINAL
OVERALL LENGTH: 0.371 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 18876-10673229 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.8 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
1N3016B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012374158
NSN
5961-01-237-4158
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 37.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
III END ITEM IDENTIFICATION: LAV, ANTI-TANK; GUIDED MISSILE, INTERCEPT
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.240 INCHES NOMINAL
OVERALL LENGTH: 0.371 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 18876-10673229 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.8 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
562265-16
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012374713
NSN
5961-01-237-4713
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 400.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 5.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 73030
MFR SOURCE CONTROLLING REFERENCE: 562265-16
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 480.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
JAN1N647
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012374713
NSN
5961-01-237-4713
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
CURRENT RATING PER CHARACTERISTIC: 400.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 5.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 73030
MFR SOURCE CONTROLLING REFERENCE: 562265-16
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 480.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
JAN1N5464C
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012375337
NSN
5961-01-237-5337
JAN1N5464C
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012375337
NSN
5961-01-237-5337
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N5464C
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: VOLTAGE VARIABLE CAPACITOR
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: D0-7
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/436
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/436 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM WORKING PEAK REVERSE VOLT
Related Searches:
2068743-0701
COVER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012375411
NSN
5961-01-237-5411
2068743-0701
COVER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012375411
NSN
5961-01-237-5411
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL
Description
MATERIAL: PLASTIC, POLYETHYLENE
MOUNTING CONFIGURATION: TO BE A SNUG FIT ON A STANDARD TO-5 TRANSISTOR
OVERALL HEIGHT: 0.210 INCHES NOMINAL
Related Searches:
46-168529G2
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012376096
NSN
5961-01-237-6096
46-168529G2
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012376096
NSN
5961-01-237-6096
MFG
GENERAL ELECTRIC CO MEDICAL SYSTEMS DIV
Description
DESIGN CONTROL REFERENCE: 46-168529G2
III END ITEM IDENTIFICATION: 6525-01-159-3009 FIELD RADIOGRAPHIC/FLUOROSCOPIC X-RAY SYSTEM; DXD 350 II
MAJOR COMPONENTS: THYRISTORS 2
MANUFACTURERS CODE: 24456
OVERALL HEIGHT: 4.425 INCHES NOMINAL
OVERALL LENGTH: 5.871 INCHES NOMINAL
OVERALL WIDTH: 5.400 INCHES NOMINAL
SPECIAL FEATURES: THYRISTOR MOUNTED TYPE SEMICONDUCTOR
THE MANUFACTURERS DATA:
Related Searches:
46-177046G1
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012376604
NSN
5961-01-237-6604
46-177046G1
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012376604
NSN
5961-01-237-6604
MFG
GENERAL ELECTRIC CO MEDICAL SYSTEMS DIV
Description
DESIGN CONTROL REFERENCE: 46-177046G1
III END ITEM IDENTIFICATION: 6525-01-159-3009 FIELD RADIOGRAPHIC.FLUOROSCOPIC X-RAY SYSTEM; DXD 350 II
MANUFACTURERS CODE: 24456
OVERALL HEIGHT: 2.000 INCHES NOMINAL
OVERALL LENGTH: 5.350 INCHES NOMINAL
OVERALL WIDTH: 3.200 INCHES NOMINAL
SPECIAL FEATURES: TRANSISTOR ASSEMBLY TYPE SEMICONDUCTOR
THE MANUFACTURERS DATA:
