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5961-01-259-2941
20 Products
111045
TRANSISTOR
NSN, MFG P/N
5961012592941
NSN
5961-01-259-2941
MFG
GETINGE/CASTLE INC
Description
SPECIAL FEATURES: REPAIR PART FOR NSN 6515-01-255-0852; ELECTROSURGICAL APPARATUS; MODEL NO. 149120,BY CLINICAL TECHNOLOGY
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151-1127-00
TRANSISTOR
NSN, MFG P/N
5961012590213
NSN
5961-01-259-0213
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
TRANSISTOR
Related Searches:
704AS9862
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012590215
NSN
5961-01-259-0215
MFG
NAVAL AIR SYSTEMS COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 NANOAMPERES MAXIMUM COLLECTOR CURRENT, INSTANTANEOUS
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.6 MAXIMUM FORWARD VOLTAGE, DC
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899862-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012590215
NSN
5961-01-259-0215
MFG
RAYTHEON COMPANY
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 NANOAMPERES MAXIMUM COLLECTOR CURRENT, INSTANTANEOUS
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.6 MAXIMUM FORWARD VOLTAGE, DC
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MA40398
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012590215
NSN
5961-01-259-0215
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 NANOAMPERES MAXIMUM COLLECTOR CURRENT, INSTANTANEOUS
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.6 MAXIMUM FORWARD VOLTAGE, DC
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99000937-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012590864
NSN
5961-01-259-0864
99000937-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012590864
NSN
5961-01-259-0864
MFG
SYPRIS ELECTRONICS LLC
Description
CAPACITANCE RATING IN PICOFARADS: 2.2 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 200.00 NANOAMPERES MAXIMUM REVERSE CURRENT, DC
FUNCTION FOR WHICH DESIGNED: SWITCHING
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.073 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM REVERSE VOLTAGE, PEAK
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1806586
TRANSISTOR
NSN, MFG P/N
5961012590949
NSN
5961-01-259-0949
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION
Description
TRANSISTOR
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VN98AK
TRANSISTOR
NSN, MFG P/N
5961012590949
NSN
5961-01-259-0949
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
TRANSISTOR
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TIP101
TRANSISTOR
NSN, MFG P/N
5961012591398
NSN
5961-01-259-1398
MFG
FREESCALE SEMICONDUCTOR INC.
Description
INTERNAL CONFIGURATION: JUNCTION CONTACT-DARLINGTON CONNECTED
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.546 INCHES NOMINAL
OVERALL LENGTH: 0.705 INCHES NOMINAL
OVERALL WIDTH: 0.400 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.381 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 PIN
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MA-42120
TRANSISTOR
NSN, MFG P/N
5961012591835
NSN
5961-01-259-1835
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
TRANSISTOR
Related Searches:
704AS9857
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012592014
NSN
5961-01-259-2014
MFG
NAVAL AIR SYSTEMS COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES GOLD
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.043 INCHES MAXIMUM
OVERALL LENGTH: 0.104 INCHES MAXIMUM
OVERALL WIDTH: 0.104 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.062 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.0 MAXIMUM REVERSE VOLTAGE, DC
VOLTAGE TOLERANCE IN PERCENT: -10.0 TO 10.0
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899857-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012592014
NSN
5961-01-259-2014
MFG
RAYTHEON COMPANY
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES GOLD
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.043 INCHES MAXIMUM
OVERALL LENGTH: 0.104 INCHES MAXIMUM
OVERALL WIDTH: 0.104 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.062 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.0 MAXIMUM REVERSE VOLTAGE, DC
VOLTAGE TOLERANCE IN PERCENT: -10.0 TO 10.0
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QSCH-5984
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012592014
NSN
5961-01-259-2014
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES GOLD
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.043 INCHES MAXIMUM
OVERALL LENGTH: 0.104 INCHES MAXIMUM
OVERALL WIDTH: 0.104 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.062 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.0 MAXIMUM REVERSE VOLTAGE, DC
VOLTAGE TOLERANCE IN PERCENT: -10.0 TO 10.0
Related Searches:
JANTXV1N6392
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012592015
NSN
5961-01-259-2015
JANTXV1N6392
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012592015
NSN
5961-01-259-2015
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CAPACITANCE RATING IN PICOFARADS: 3000.0 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 60.00 AMPERES MAXIMUM FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE AND 54.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 1000.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N6392
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/554
OVERALL LENGTH: 1.453 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.688 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/554 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED ST
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704AS9642
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012592016
NSN
5961-01-259-2016
704AS9642
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012592016
NSN
5961-01-259-2016
MFG
NAVAL AIR SYSTEMS COMMAND
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC ALL SEMICONDUCTOR DEVICE DIODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.138 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL LENGTH: 0.120 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MINIMUM REVERSE BREAKDOWN VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE
VOLTAGE TOLERANCE IN PERCENT: -20.0 TO 20.0 ALL SEMICONDUCTOR DEVICE DIODE
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899642-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012592016
NSN
5961-01-259-2016
899642-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012592016
NSN
5961-01-259-2016
MFG
RAYTHEON COMPANY
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC ALL SEMICONDUCTOR DEVICE DIODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.138 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL LENGTH: 0.120 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MINIMUM REVERSE BREAKDOWN VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE
VOLTAGE TOLERANCE IN PERCENT: -20.0 TO 20.0 ALL SEMICONDUCTOR DEVICE DIODE
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DVH3501-99
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012592016
NSN
5961-01-259-2016
DVH3501-99
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012592016
NSN
5961-01-259-2016
MFG
SKYWORKS SOLUTIONS INC.
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC ALL SEMICONDUCTOR DEVICE DIODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.138 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL LENGTH: 0.120 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MINIMUM REVERSE BREAKDOWN VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE
VOLTAGE TOLERANCE IN PERCENT: -20.0 TO 20.0 ALL SEMICONDUCTOR DEVICE DIODE
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MA45860
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012592016
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5961-01-259-2016
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SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012592016
NSN
5961-01-259-2016
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC ALL SEMICONDUCTOR DEVICE DIODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.138 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL LENGTH: 0.120 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MINIMUM REVERSE BREAKDOWN VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE
VOLTAGE TOLERANCE IN PERCENT: -20.0 TO 20.0 ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
3256753
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012592716
NSN
5961-01-259-2716
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.750 INCHES
OVERALL DIAMETER: 1.690 INCHES NOMINAL
OVERALL LENGTH: 9.700 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 400.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
73-4659
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012592716
NSN
5961-01-259-2716
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.750 INCHES
OVERALL DIAMETER: 1.690 INCHES NOMINAL
OVERALL LENGTH: 9.700 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 400.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
