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5961-01-300-4973

20 Products

1902-0569

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013004973

NSN

5961-01-300-4973

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1902-0569

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013004973

NSN

5961-01-300-4973

MFG

HEWLETT PACKARD CO

Description

CURRENT RATING PER CHARACTERISTIC: 7.500 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 39.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N941B-1
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX
FUNCTION FOR WHICH DESIGNED: VOLTAGE REFERENCE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/157
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/157 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.500 INCHES MAXIMUM
TERMINAL T

1N941

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013004973

NSN

5961-01-300-4973

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1N941

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013004973

NSN

5961-01-300-4973

MFG

TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES

Description

CURRENT RATING PER CHARACTERISTIC: 7.500 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 39.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N941B-1
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX
FUNCTION FOR WHICH DESIGNED: VOLTAGE REFERENCE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/157
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/157 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.500 INCHES MAXIMUM
TERMINAL T

7618150P0001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013004973

NSN

5961-01-300-4973

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7618150P0001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013004973

NSN

5961-01-300-4973

MFG

LOCKHEED MARTIN CORP NAVAL ELECTRONICS & SURVEILLANCE SYSTEMS

Description

CURRENT RATING PER CHARACTERISTIC: 7.500 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 39.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N941B-1
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX
FUNCTION FOR WHICH DESIGNED: VOLTAGE REFERENCE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/157
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/157 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.500 INCHES MAXIMUM
TERMINAL T

DMS 88043B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013004973

NSN

5961-01-300-4973

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DMS 88043B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013004973

NSN

5961-01-300-4973

MFG

DLA LAND AND MARITIME

Description

CURRENT RATING PER CHARACTERISTIC: 7.500 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 39.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N941B-1
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX
FUNCTION FOR WHICH DESIGNED: VOLTAGE REFERENCE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/157
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/157 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.500 INCHES MAXIMUM
TERMINAL T

JANTX1N941B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013004973

NSN

5961-01-300-4973

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JANTX1N941B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013004973

NSN

5961-01-300-4973

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 7.500 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 39.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N941B-1
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX
FUNCTION FOR WHICH DESIGNED: VOLTAGE REFERENCE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/157
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/157 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.500 INCHES MAXIMUM
TERMINAL T

SV7570

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013004973

NSN

5961-01-300-4973

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SV7570

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013004973

NSN

5961-01-300-4973

MFG

GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP

Description

CURRENT RATING PER CHARACTERISTIC: 7.500 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 39.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N941B-1
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX
FUNCTION FOR WHICH DESIGNED: VOLTAGE REFERENCE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/157
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/157 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.500 INCHES MAXIMUM
TERMINAL T

SZ11489

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013004973

NSN

5961-01-300-4973

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SZ11489

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013004973

NSN

5961-01-300-4973

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 7.500 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 39.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N941B-1
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX
FUNCTION FOR WHICH DESIGNED: VOLTAGE REFERENCE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/157
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/157 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.500 INCHES MAXIMUM
TERMINAL T

814202

TRANSISTOR

NSN, MFG P/N

5961013005018

NSN

5961-01-300-5018

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814202

TRANSISTOR

NSN, MFG P/N

5961013005018

NSN

5961-01-300-5018

MFG

IMED CORP

Description

DESIGN CONTROL REFERENCE: 814202
MANUFACTURERS CODE: 58682
SPECIAL FEATURES: FOR USE ON PUMP,INFUSION,IV,NSN 6515-01-025-8839,MODEL: 927
THE MANUFACTURERS DATA:

1035826-1

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961013005580

NSN

5961-01-300-5580

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1035826-1

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961013005580

NSN

5961-01-300-5580

MFG

RAYTHEON COMPANY DBA RAYTHEON

983549-2

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961013005580

NSN

5961-01-300-5580

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983549-2

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961013005580

NSN

5961-01-300-5580

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

BY.1F

TRANSISTOR

NSN, MFG P/N

5961013005692

NSN

5961-01-300-5692

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BY.1F

TRANSISTOR

NSN, MFG P/N

5961013005692

NSN

5961-01-300-5692

MFG

VISHAY DALE ELECTRONICS INC . DIV VISHAY DALE ELECTRONICS

282-7217P1

TRANSISTOR

NSN, MFG P/N

5961013005693

NSN

5961-01-300-5693

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282-7217P1

TRANSISTOR

NSN, MFG P/N

5961013005693

NSN

5961-01-300-5693

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

165403-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013005695

NSN

5961-01-300-5695

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165403-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013005695

NSN

5961-01-300-5695

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

983056-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013005696

NSN

5961-01-300-5696

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983056-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013005696

NSN

5961-01-300-5696

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

0405280009

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013005698

NSN

5961-01-300-5698

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0405280009

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013005698

NSN

5961-01-300-5698

MFG

SUNAIR ELECTRONICS LLC

1077575-1

TRANSISTOR

NSN, MFG P/N

5961013007091

NSN

5961-01-300-7091

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1077575-1

TRANSISTOR

NSN, MFG P/N

5961013007091

NSN

5961-01-300-7091

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

70HFL100S05

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013007093

NSN

5961-01-300-7093

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70HFL100S05

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013007093

NSN

5961-01-300-7093

MFG

INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.

Description

CURRENT RATING PER CHARACTERISTIC: 70.00 AMPERES MAXIMUM FORWARD CURRENT, DC
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.450 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.690 INCHES MINIMUM
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE

91617158

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013007093

NSN

5961-01-300-7093

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91617158

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013007093

NSN

5961-01-300-7093

MFG

THALES

Description

CURRENT RATING PER CHARACTERISTIC: 70.00 AMPERES MAXIMUM FORWARD CURRENT, DC
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.450 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.690 INCHES MINIMUM
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE

91435922

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013007094

NSN

5961-01-300-7094

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91435922

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013007094

NSN

5961-01-300-7094

MFG

THALES

Description

OVERALL LENGTH: 2.170 INCHES MAXIMUM
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

HSCH1001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013007094

NSN

5961-01-300-7094

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HSCH1001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013007094

NSN

5961-01-300-7094

MFG

HEWLETT PACKARD CO

Description

OVERALL LENGTH: 2.170 INCHES MAXIMUM
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD