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5961-01-307-1554
20 Products
MZPY100
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013071554
NSN
5961-01-307-1554
MFG
FREESCALE SEMICONDUCTOR INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
C4941-2
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013071642
NSN
5961-01-307-1642
C4941-2
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013071642
NSN
5961-01-307-1642
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV LOCKHEED MARTIN AERONAUTICS COMPANY
Description
COMPONENT NAME AND QUANTITY: 7 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 100.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT ALL SEMICONDUCTOR DEVICE DIODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.810 INCHES NOMINAL
OVERALL LENGTH: 0.810 INCHES NOMINAL
OVERALL WIDTH: 0.810 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL TYPE AND QUANTITY: 14 PIN
TEST DATA DOCUMENT: 81755-C4941 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 660.0 MINIMUM BREAKDOWN VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
CX-3959A
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013071642
NSN
5961-01-307-1642
CX-3959A
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013071642
NSN
5961-01-307-1642
MFG
TYCO ELECTRONICS CORPORATION DBA CII TECHNOLOGIES
Description
COMPONENT NAME AND QUANTITY: 7 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 100.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT ALL SEMICONDUCTOR DEVICE DIODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.810 INCHES NOMINAL
OVERALL LENGTH: 0.810 INCHES NOMINAL
OVERALL WIDTH: 0.810 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL TYPE AND QUANTITY: 14 PIN
TEST DATA DOCUMENT: 81755-C4941 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 660.0 MINIMUM BREAKDOWN VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
CX3959A
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013071642
NSN
5961-01-307-1642
CX3959A
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013071642
NSN
5961-01-307-1642
MFG
STRUTHERS-DUNN INC
Description
COMPONENT NAME AND QUANTITY: 7 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 100.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT ALL SEMICONDUCTOR DEVICE DIODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.810 INCHES NOMINAL
OVERALL LENGTH: 0.810 INCHES NOMINAL
OVERALL WIDTH: 0.810 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL TYPE AND QUANTITY: 14 PIN
TEST DATA DOCUMENT: 81755-C4941 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 660.0 MINIMUM BREAKDOWN VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
EP-231
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013071642
NSN
5961-01-307-1642
EP-231
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013071642
NSN
5961-01-307-1642
MFG
LEACH INTERNATIONAL CORPORATION
Description
COMPONENT NAME AND QUANTITY: 7 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 100.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT ALL SEMICONDUCTOR DEVICE DIODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.810 INCHES NOMINAL
OVERALL LENGTH: 0.810 INCHES NOMINAL
OVERALL WIDTH: 0.810 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL TYPE AND QUANTITY: 14 PIN
TEST DATA DOCUMENT: 81755-C4941 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 660.0 MINIMUM BREAKDOWN VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
0N386116-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013071745
NSN
5961-01-307-1745
0N386116-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013071745
NSN
5961-01-307-1745
MFG
NATIONAL SECURITY AGENCY
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
CD431490
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013072490
NSN
5961-01-307-2490
CD431490
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013072490
NSN
5961-01-307-2490
MFG
WESTINGHOUSE ELECTRIC CORP SEMICONDUCTOR DIV
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE THYRISTOR
CURRENT RATING PER CHARACTERISTIC: 145.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL ALL SEMICONDUCTOR DEVICE THYRISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 1.280 INCHES MAXIMUM
OVERALL LENGTH: 3.640 INCHES MAXIMUM
OVERALL WIDTH: 0.805 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 16.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION ALL SEMICONDUCTOR DEVICE THYRISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE THYRISTOR
SPECIAL FEATURES: ALL SEMICONDUCTOR DEIVCE THYRISTOR JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 4 TAB W/SCREW
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1700.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 1400.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 1400.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE ALL SEMICO
Related Searches:
MB11A06V60
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013072559
NSN
5961-01-307-2559
MB11A06V60
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013072559
NSN
5961-01-307-2559
MFG
WESTINGHOUSE ELECTRIC CORP SEMICONDUCTOR DIV
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 6.00 AMPERES ON-STATE CURRENT, AVERAGE AND 125.00 AMPERES PEAK ON-STATE SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 REPETITIVE PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OVERALL HEIGHT: 0.255 INCHES MAXIMUM
OVERALL LENGTH: 0.760 INCHES MAXIMUM
OVERALL WIDTH: 0.760 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
Related Searches:
523AB1AF1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013072751
NSN
5961-01-307-2751
523AB1AF1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013072751
NSN
5961-01-307-2751
MFG
SUMMAGRAPHICS CORP
Description
RECTIFIER,SEMICONDUCTOR DEVICE
Related Searches:
2N1613S
TRANSISTOR
NSN, MFG P/N
5961013072791
NSN
5961-01-307-2791
MFG
FREESCALE SEMICONDUCTOR INC.
Description
TRANSISTOR
Related Searches:
WE702
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5961013073095
NSN
5961-01-307-3095
MFG
KORNYLAK CORPORATION
Description
III END ITEM IDENTIFICATION: NIMITZ CLASS CVN; CONVEYERS, FLEET VERTICAL PACKAGE; MARS CLASS T-AFS 1
Related Searches:
1N6294A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013074750
NSN
5961-01-307-4750
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
POWER RATING PER CHARACTERISTIC: 1500.0 WATTS NOMINAL PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.160 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 91.0 NOMINAL BREAKDOWN VOLTAGE, DC
Related Searches:
2N760ALJ
TRANSISTOR
NSN, MFG P/N
5961013075348
NSN
5961-01-307-5348
MFG
HONEYWELL INTL INC DEFENSE AVIONICS SYSTEMS
Description
III END ITEM IDENTIFICATION: C-141 A/B
SPECIAL FEATURES: PART OF PITCH,DISCONNECT MODULE; USED ON 6615-00-069-5669
Related Searches:
04ES055-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013075349
NSN
5961-01-307-5349
MFG
RAYTHEON CO ESD LONG ISLAND DIV
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 300.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: COUNTERMEASURES
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ELECTROSTATIC SENSITIVE DEVICE
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
Related Searches:
99162309
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013075349
NSN
5961-01-307-5349
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 300.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: COUNTERMEASURES
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ELECTROSTATIC SENSITIVE DEVICE
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
Related Searches:
JANTX1N4150-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013075349
NSN
5961-01-307-5349
JANTX1N4150-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013075349
NSN
5961-01-307-5349
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 300.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: COUNTERMEASURES
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ELECTROSTATIC SENSITIVE DEVICE
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
Related Searches:
8210-1205
TRANSISTOR
NSN, MFG P/N
5961013075574
NSN
5961-01-307-5574
MFG
GENRAD INC
Description
TRANSISTOR
Related Searches:
1N5281
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013075575
NSN
5961-01-307-5575
MFG
FREESCALE SEMICONDUCTOR INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
6083-1079
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013075575
NSN
5961-01-307-5575
MFG
GENRAD INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
772618-1
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961013075745
NSN
5961-01-307-5745
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN ALL TRANSISTOR
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR ALL TRANSISTOR
INCLOSURE MATERIAL: METAL ALL TRANSISTOR
INTERNAL CONFIGURATION: JUNCTION CONTACT ALL TRANSISTOR
INTERNAL JUNCTION CONFIGURATION: NPN ALL TRANSISTOR
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5 ALL TRANSISTOR
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR ALL TRANSISTOR
MOUNTING METHOD: TERMINAL ALL TRANSISTOR
OVERALL DIAMETER: 0.370 INCHES MAXIMUM ALL TRANSISTOR
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM ALL TRANSISTOR
POWER RATING PER CHARACTERISTIC: 4.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: DC BETA MATCHED W/IN 5 PERCENT AT
