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5961-00-942-3982
20 Products
025-044
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009423982
NSN
5961-00-942-3982
MFG
GENERAL INSTRUMENT CORPORATION DBA MOTOROLA DIV CONNECTED HOME SOLUTION
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N3614
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/228
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.110 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/228 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.600 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM WORKING PEAK REVERSE VOLTAG
Related Searches:
2N2001
TRANSISTOR
NSN, MFG P/N
5961009420922
NSN
5961-00-942-0922
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE3561 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 15.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 20.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECT
Related Searches:
2089439-702
TRANSISTOR
NSN, MFG P/N
5961009420923
NSN
5961-00-942-0923
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
CURRENT RATING PER CHARACTERISTIC: 300.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.685 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 450.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE3963 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 0.250 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
2N2396
TRANSISTOR
NSN, MFG P/N
5961009420923
NSN
5961-00-942-0923
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 300.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.685 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 450.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE3963 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 0.250 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
2N2654
TRANSISTOR
NSN, MFG P/N
5961009420931
NSN
5961-00-942-0931
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.164 INCHES
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.855 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE4194 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 0.5 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
632631-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009421072
NSN
5961-00-942-1072
632631-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009421072
NSN
5961-00-942-1072
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN MS2
Description
DESIGN CONTROL REFERENCE: 632631-001
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 56232
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: QUALITY CONTROLLED FOR POLARIS
SEMICONDUCTOR MATERIAL: SILICON
THE MANUFACTURERS DATA:
Related Searches:
2-00055-520
TRANSISTOR
NSN, MFG P/N
5961009421213
NSN
5961-00-942-1213
MFG
ARMA DIV AMBAC INDUSTRIES INC
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 90.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 90.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
1N198M
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009421272
NSN
5961-00-942-1272
MFG
ITT SEMICONDUCTORS DIV
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N198M
DEPARTURE FROM CITED DESIGNATOR: EXCEPT QUALITY CONTROLLED FOR POLARIS
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-109
NONDEFINITIVE SPEC/STD DATA: IN198M TYPE
SEMICONDUCTOR MATERIAL: GERMANIUM
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
JAN1N198M
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009421272
NSN
5961-00-942-1272
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N198M
DEPARTURE FROM CITED DESIGNATOR: EXCEPT QUALITY CONTROLLED FOR POLARIS
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-109
NONDEFINITIVE SPEC/STD DATA: IN198M TYPE
SEMICONDUCTOR MATERIAL: GERMANIUM
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
1823270-1
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961009422650
NSN
5961-00-942-2650
MFG
HONEYWELL INTERNATIONAL INC. DBA HONEYWELL DIV SENSING & CONTROL
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 20.00 MILLIAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL ALL TRANSISTOR
INTERNAL CONFIGURATION: JUNCTION CONTACT ALL TRANSISTOR
INTERNAL JUNCTION CONFIGURATION: NPN ALL TRANSISTOR
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-81 ALL TRANSISTOR
MOUNTING FACILITY QUANTITY: 1 ALL TRANSISTOR
MOUNTING METHOD: THREADED STUD ALL TRANSISTOR
NOMINAL THREAD SIZE: 0.312 INCHES ALL TRANSISTOR
OVERALL DIAMETER: 1.230 INCHES MINIMUM AND 1.300 INCHES MAXIMUM ALL TRANSISTOR
OVERALL LENGTH: 0.915 INCHES NOMINAL ALL TRANSISTOR
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY:
Related Searches:
2N2227
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961009422650
NSN
5961-00-942-2650
MFG
SILICON TRANSISTOR CORP SUB OF BBF INC
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 20.00 MILLIAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL ALL TRANSISTOR
INTERNAL CONFIGURATION: JUNCTION CONTACT ALL TRANSISTOR
INTERNAL JUNCTION CONFIGURATION: NPN ALL TRANSISTOR
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-81 ALL TRANSISTOR
MOUNTING FACILITY QUANTITY: 1 ALL TRANSISTOR
MOUNTING METHOD: THREADED STUD ALL TRANSISTOR
NOMINAL THREAD SIZE: 0.312 INCHES ALL TRANSISTOR
OVERALL DIAMETER: 1.230 INCHES MINIMUM AND 1.300 INCHES MAXIMUM ALL TRANSISTOR
OVERALL LENGTH: 0.915 INCHES NOMINAL ALL TRANSISTOR
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY:
Related Searches:
2N2227/19
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961009422650
NSN
5961-00-942-2650
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 20.00 MILLIAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL ALL TRANSISTOR
INTERNAL CONFIGURATION: JUNCTION CONTACT ALL TRANSISTOR
INTERNAL JUNCTION CONFIGURATION: NPN ALL TRANSISTOR
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-81 ALL TRANSISTOR
MOUNTING FACILITY QUANTITY: 1 ALL TRANSISTOR
MOUNTING METHOD: THREADED STUD ALL TRANSISTOR
NOMINAL THREAD SIZE: 0.312 INCHES ALL TRANSISTOR
OVERALL DIAMETER: 1.230 INCHES MINIMUM AND 1.300 INCHES MAXIMUM ALL TRANSISTOR
OVERALL LENGTH: 0.915 INCHES NOMINAL ALL TRANSISTOR
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY:
Related Searches:
A60G101010DC00BX41
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961009422650
NSN
5961-00-942-2650
A60G101010DC00BX41
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961009422650
NSN
5961-00-942-2650
MFG
POWEREX INC
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 20.00 MILLIAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL ALL TRANSISTOR
INTERNAL CONFIGURATION: JUNCTION CONTACT ALL TRANSISTOR
INTERNAL JUNCTION CONFIGURATION: NPN ALL TRANSISTOR
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-81 ALL TRANSISTOR
MOUNTING FACILITY QUANTITY: 1 ALL TRANSISTOR
MOUNTING METHOD: THREADED STUD ALL TRANSISTOR
NOMINAL THREAD SIZE: 0.312 INCHES ALL TRANSISTOR
OVERALL DIAMETER: 1.230 INCHES MINIMUM AND 1.300 INCHES MAXIMUM ALL TRANSISTOR
OVERALL LENGTH: 0.915 INCHES NOMINAL ALL TRANSISTOR
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY:
Related Searches:
SES284
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961009422650
NSN
5961-00-942-2650
MFG
SEMITRONICS CORP
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 20.00 MILLIAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL ALL TRANSISTOR
INTERNAL CONFIGURATION: JUNCTION CONTACT ALL TRANSISTOR
INTERNAL JUNCTION CONFIGURATION: NPN ALL TRANSISTOR
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-81 ALL TRANSISTOR
MOUNTING FACILITY QUANTITY: 1 ALL TRANSISTOR
MOUNTING METHOD: THREADED STUD ALL TRANSISTOR
NOMINAL THREAD SIZE: 0.312 INCHES ALL TRANSISTOR
OVERALL DIAMETER: 1.230 INCHES MINIMUM AND 1.300 INCHES MAXIMUM ALL TRANSISTOR
OVERALL LENGTH: 0.915 INCHES NOMINAL ALL TRANSISTOR
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY:
Related Searches:
0007-7828
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009422805
NSN
5961-00-942-2805
MFG
LOCKHEED MARTIN CORP LOCKHEED MARTIN MISSION SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.3 MAXIMUM FORWARD VOLTAGE, TOTAL RMS
Related Searches:
0007-8717
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009422810
NSN
5961-00-942-2810
MFG
LOCKHEED MARTIN CORP LOCKHEED MARTIN MISSION SYSTEMS
Description
DESIGN CONTROL REFERENCE: 78717
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 08241
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
101816
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961009423104
NSN
5961-00-942-3104
MFG
ASTRONAUTICS CORPORATION OF AMERICA
Description
ACCOMMODATED ITEM SECURING DEVICE TYPE: FRICTION FASTENER
DESIGN CONTROL REFERENCE: 101816
DISTANCE BETWEEN MOUNTING FACILITY CENTERS: 1.000 INCHES NOMINAL SINGLE MOUNTING FACILITY SINGLE CENTER GROUP
MANUFACTURERS CODE: 10138
MATERIAL: PLASTIC
MATERIAL DOCUMENT AND CLASSIFICATION: MIL-P-18177 MIL SPEC SINGLE MATERIAL RESPONSE
MOUNTING FACILITY TYPE AND QUANTITY: 2 UNTHREADED HOLE SINGLE MOUNTING FACILITY
OVERALL HEIGHT: 0.062 INCHES NOMINAL
OVERALL LENGTH: 1.160 INCHES NOMINAL
OVERALL WIDTH: 0.400 INCHES NOMINAL
STYLE DESIGNATOR: 12C IRREGULAR
SURFACE TREATMENT: ANY ACCEPTABLE
THE MANUFACTURERS DATA:
UNTHREADED MOUNTING HOLE DIAMETER: 0.070 INCHES NOMINAL SINGLE MOUNTING FACILITY
Related Searches:
07-11462
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009423982
NSN
5961-00-942-3982
MFG
IMLAC CORP
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N3614
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/228
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.110 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/228 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.600 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM WORKING PEAK REVERSE VOLTAG
Related Searches:
161-0020-05
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009423982
NSN
5961-00-942-3982
161-0020-05
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009423982
NSN
5961-00-942-3982
MFG
GRANGER ASSOCIATES MS 1101
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N3614
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/228
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.110 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/228 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.600 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM WORKING PEAK REVERSE VOLTAG
Related Searches:
16G5
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009423982
NSN
5961-00-942-3982
MFG
SENCORE INC.
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N3614
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/228
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.110 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/228 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.600 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM WORKING PEAK REVERSE VOLTAG
