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5961-01-311-1773
20 Products
FBM-Z202
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013111773
NSN
5961-01-311-1773
MFG
VEECO INSTRUMENTS INC LAMBDA DIV
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
FBL-00-179
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013111774
NSN
5961-01-311-1774
FBL-00-179
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013111774
NSN
5961-01-311-1774
MFG
VEECO INSTRUMENTS INC LAMBDA DIV
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
FBL-00-202
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013111775
NSN
5961-01-311-1775
FBL-00-202
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013111775
NSN
5961-01-311-1775
MFG
VEECO INSTRUMENTS INC LAMBDA DIV
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
91553501
TRANSISTOR
NSN, MFG P/N
5961013111858
NSN
5961-01-311-1858
MFG
THALES
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
INTERNAL CONFIGURATION: FIELD EFFECT OR FIELD EFFECT-DUAL GATE
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.145 INCHES NOMINAL
OVERALL LENGTH: 0.270 INCHES NOMINAL
OVERALL WIDTH: 0.188 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 PIN
Related Searches:
VP0300M
TRANSISTOR
NSN, MFG P/N
5961013111858
NSN
5961-01-311-1858
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
INTERNAL CONFIGURATION: FIELD EFFECT OR FIELD EFFECT-DUAL GATE
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.145 INCHES NOMINAL
OVERALL LENGTH: 0.270 INCHES NOMINAL
OVERALL WIDTH: 0.188 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 PIN
Related Searches:
S3BR4F
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013112202
NSN
5961-01-311-2202
S3BR4F
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013112202
NSN
5961-01-311-2202
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
RECTIFIER,SEMICONDUCTOR DEVICE
Related Searches:
Q05-0001-000
TRANSISTOR
NSN, MFG P/N
5961013112335
NSN
5961-01-311-2335
MFG
HARRIS CORPORATION DBA HARRIS RF COMMUNICATION
Description
TRANSISTOR
Related Searches:
Q35-0001-001
TRANSISTOR
NSN, MFG P/N
5961013112336
NSN
5961-01-311-2336
MFG
HARRIS CORPORATION DBA HARRIS RF COMMUNICATION
Description
TRANSISTOR
Related Searches:
Q35-0003-002
TRANSISTOR
NSN, MFG P/N
5961013112337
NSN
5961-01-311-2337
MFG
HARRIS CORPORATION DBA HARRIS RF COMMUNICATION
Description
TRANSISTOR
Related Searches:
Q50-0009-000
TRANSISTOR
NSN, MFG P/N
5961013112338
NSN
5961-01-311-2338
MFG
SULLIVAN N J CO INC
Description
TRANSISTOR
Related Searches:
Q50-0011-000
TRANSISTOR
NSN, MFG P/N
5961013112339
NSN
5961-01-311-2339
MFG
HARRIS CORPORATION DBA HARRIS RF COMMUNICATION
Description
TRANSISTOR
Related Searches:
IRFD123
TRANSISTOR
NSN, MFG P/N
5961013112340
NSN
5961-01-311-2340
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 1.10 AMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: CERAMIC OR PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.238 INCHES MINIMUM AND 0.248 INCHES MAXIMUM
OVERALL WIDTH: 0.194 INCHES MINIMUM AND 0.198 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
Q65-0003-001
TRANSISTOR
NSN, MFG P/N
5961013112340
NSN
5961-01-311-2340
MFG
HARRIS CORPORATION DBA HARRIS RF COMMUNICATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 1.10 AMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: CERAMIC OR PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.238 INCHES MINIMUM AND 0.248 INCHES MAXIMUM
OVERALL WIDTH: 0.194 INCHES MINIMUM AND 0.198 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
D22-0006-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013112341
NSN
5961-01-311-2341
D22-0006-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013112341
NSN
5961-01-311-2341
MFG
HARRIS CORPORATION DBA HARRIS RF COMMUNICATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
D25-0002-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013112342
NSN
5961-01-311-2342
D25-0002-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013112342
NSN
5961-01-311-2342
MFG
HARRIS CORPORATION DBA HARRIS RF COMMUNICATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
MV-309
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013112342
NSN
5961-01-311-2342
MFG
FREESCALE SEMICONDUCTOR INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
101-210
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013112852
NSN
5961-01-311-2852
101-210
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013112852
NSN
5961-01-311-2852
MFG
PRESTOLITE ELECTRIC INCORPORATED
Description
MAJOR COMPONENTS: POSITIVE DIODE 3; HEAT SINK 1
Related Searches:
5193063
TRANSISTOR
NSN, MFG P/N
5961013113154
NSN
5961-01-311-3154
MFG
NAVAL SEA SYSTEMS COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: -2.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND -1.00 AMPERES MAXIMUM BASE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-66
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.340 INCHES MAXIMUM
OVERALL LENGTH: 1.252 INCHES MAXIMUM
OVERALL WIDTH: 0.700 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 35.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -275.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -225.0 MAXIMUM COLLECTOR TO EMITTER VO
Related Searches:
JANTX2N6211
TRANSISTOR
NSN, MFG P/N
5961013113154
NSN
5961-01-311-3154
MFG
MICROSEMI PPC INC
Description
CURRENT RATING PER CHARACTERISTIC: -2.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND -1.00 AMPERES MAXIMUM BASE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-66
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.340 INCHES MAXIMUM
OVERALL LENGTH: 1.252 INCHES MAXIMUM
OVERALL WIDTH: 0.700 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 35.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -275.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -225.0 MAXIMUM COLLECTOR TO EMITTER VO
Related Searches:
352-8819-010
TRANSISTOR
NSN, MFG P/N
5961013113155
NSN
5961-01-311-3155
MFG
ROCKWELL COLLINS INC. DIV GOVERNMENT SYSTEMS - DALLAS
Description
CURRENT RATING PER CHARACTERISTIC: 150.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND BURN IN AND HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: 5820-01-261-6618 RADIO SET
INCLOSURE MATERIAL: CERAMIC OR GLASS OR PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.200 INCHES MINIMUM AND 0.220 INCHES MAXIMUM
OVERALL LENGTH: 0.095 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.5 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 95105-352-8819-010 MANUFACTURERS SPECIFICATION CONTROL
TERMINAL LENGTH: 0.435 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 3.0 MAXIMUM EMITTER TO BASE
