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5961-01-338-5101
20 Products
MD7003
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013385101
NSN
5961-01-338-5101
MD7003
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013385101
NSN
5961-01-338-5101
MFG
FREESCALE SEMICONDUCTOR INC.
Description
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN SINGLE TRANSISTOR
Related Searches:
100294
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013385285
NSN
5961-01-338-5285
MFG
AEROFLEX / KDI INC. DIV AEROFLEX/KDI INTEGRATED PRODUCTS
Description
MAJOR COMPONENTS: DIODE 1,THREADED END CAP 1,UNTHREADED END CAP 1
Related Searches:
5R4860-038-0001
TRANSISTOR
NSN, MFG P/N
5961013385496
NSN
5961-01-338-5496
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 24.00 AMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: GLASS
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-254
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
OVERALL HEIGHT: 6.32 MILLIMETERS MINIMUM AND 6.60 MILLIMETERS MAXIMUM
OVERALL LENGTH: 20.07 MILLIMETERS MINIMUM AND 20.32 MILLIMETERS MAXIMUM
OVERALL WIDTH: 13.59 MILLIMETERS MINIMUM AND 13.84 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 125.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
TERMINAL LENGTH: 13.46 MILLIMETERS MINIMUM AND 28.4
Related Searches:
94-7458
TRANSISTOR
NSN, MFG P/N
5961013385496
NSN
5961-01-338-5496
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 24.00 AMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: GLASS
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-254
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
OVERALL HEIGHT: 6.32 MILLIMETERS MINIMUM AND 6.60 MILLIMETERS MAXIMUM
OVERALL LENGTH: 20.07 MILLIMETERS MINIMUM AND 20.32 MILLIMETERS MAXIMUM
OVERALL WIDTH: 13.59 MILLIMETERS MINIMUM AND 13.84 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 125.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
TERMINAL LENGTH: 13.46 MILLIMETERS MINIMUM AND 28.4
Related Searches:
IRFM250
TRANSISTOR
NSN, MFG P/N
5961013385496
NSN
5961-01-338-5496
MFG
INTERSIL CORPORATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 24.00 AMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: GLASS
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-254
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
OVERALL HEIGHT: 6.32 MILLIMETERS MINIMUM AND 6.60 MILLIMETERS MAXIMUM
OVERALL LENGTH: 20.07 MILLIMETERS MINIMUM AND 20.32 MILLIMETERS MAXIMUM
OVERALL WIDTH: 13.59 MILLIMETERS MINIMUM AND 13.84 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 125.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
TERMINAL LENGTH: 13.46 MILLIMETERS MINIMUM AND 28.4
Related Searches:
NH5R4860-038-0001
TRANSISTOR
NSN, MFG P/N
5961013385496
NSN
5961-01-338-5496
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 24.00 AMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: GLASS
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-254
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
OVERALL HEIGHT: 6.32 MILLIMETERS MINIMUM AND 6.60 MILLIMETERS MAXIMUM
OVERALL LENGTH: 20.07 MILLIMETERS MINIMUM AND 20.32 MILLIMETERS MAXIMUM
OVERALL WIDTH: 13.59 MILLIMETERS MINIMUM AND 13.84 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 125.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
TERMINAL LENGTH: 13.46 MILLIMETERS MINIMUM AND 28.4
Related Searches:
20-01028-003
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013385497
NSN
5961-01-338-5497
20-01028-003
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013385497
NSN
5961-01-338-5497
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 250.00 MICROAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: BURN IN AND HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.4 MINIMUM NOMINAL REGULATOR VOLTAGE AND 5.8 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
PVZ1458
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013385497
NSN
5961-01-338-5497
MFG
OPTEK TECHNOLOGY INC
Description
CURRENT RATING PER CHARACTERISTIC: 250.00 MICROAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: BURN IN AND HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.4 MINIMUM NOMINAL REGULATOR VOLTAGE AND 5.8 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
20-01028-007
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013385498
NSN
5961-01-338-5498
20-01028-007
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013385498
NSN
5961-01-338-5498
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 250.00 MICROAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: BURN IN AND HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.6 MINIMUM NOMINAL REGULATOR VOLTAGE AND 7.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
PVZ1457
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013385498
NSN
5961-01-338-5498
MFG
OPTEK TECHNOLOGY INC
Description
CURRENT RATING PER CHARACTERISTIC: 250.00 MICROAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: BURN IN AND HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.6 MINIMUM NOMINAL REGULATOR VOLTAGE AND 7.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
60690-031
DIODE BOARD ASSY,AM
NSN, MFG P/N
5961013386178
NSN
5961-01-338-6178
MFG
DYNALEC CORPORATION
Description
III END ITEM IDENTIFICATION: AUDIO-FREQUENCY AMPLIFIER ASSY MOD AM-2321B/SIA
Related Searches:
KYR326
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013386453
NSN
5961-01-338-6453
MFG
DRS POWER & CONTROL TECHNOLOGIES INC.
Description
ACCOMMODATED ITEM SECURING DEVICE TYPE: HOLES
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: KYR326
MANUFACTURERS CODE: 06RP6
MATERIAL: ALUMINUM ALLOY 6061
MOUNTING FACILITY TYPE AND QUANTITY: 6 UNTHREADED HOLE SINGLE MOUNTING FACILITY
OVERALL HEIGHT: 0.560 INCHES NOMINAL
OVERALL LENGTH: 3.380 INCHES NOMINAL
OVERALL WIDTH: 0.940 INCHES NOMINAL
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: REFERENCE NUMBER DIFFERENTIATING MATERIAL WILL BE IN ACCORDANCE WITH NAVAL INVENTORY CONTROL POINT ACTIVITY HX QUALITY CONTROL. MANUFACTURING AND TESTING SPECIFICATIONS AVAILABLE AT THE DLA ICP.
SPECIAL FEATURES: ITEM MUST COMPLY WITH REQUIREMENTS OF DEFENSE SUPPLY CENTER COLUMBUS PRODUCTION STANDARD NO. LO4388
STYLE DESIGNATOR: 1C RECTANGULAR PRISM
THE MANUFACTURERS DATA:
UNTHREADED MOUNTING HOLE DIAMETER: 0.166 INCHES NOMINAL SINGLE MOUNTING FACILITY
Related Searches:
LO4388
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013386453
NSN
5961-01-338-6453
MFG
DLA LAND AND MARITIME
Description
ACCOMMODATED ITEM SECURING DEVICE TYPE: HOLES
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: KYR326
MANUFACTURERS CODE: 06RP6
MATERIAL: ALUMINUM ALLOY 6061
MOUNTING FACILITY TYPE AND QUANTITY: 6 UNTHREADED HOLE SINGLE MOUNTING FACILITY
OVERALL HEIGHT: 0.560 INCHES NOMINAL
OVERALL LENGTH: 3.380 INCHES NOMINAL
OVERALL WIDTH: 0.940 INCHES NOMINAL
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: REFERENCE NUMBER DIFFERENTIATING MATERIAL WILL BE IN ACCORDANCE WITH NAVAL INVENTORY CONTROL POINT ACTIVITY HX QUALITY CONTROL. MANUFACTURING AND TESTING SPECIFICATIONS AVAILABLE AT THE DLA ICP.
SPECIAL FEATURES: ITEM MUST COMPLY WITH REQUIREMENTS OF DEFENSE SUPPLY CENTER COLUMBUS PRODUCTION STANDARD NO. LO4388
STYLE DESIGNATOR: 1C RECTANGULAR PRISM
THE MANUFACTURERS DATA:
UNTHREADED MOUNTING HOLE DIAMETER: 0.166 INCHES NOMINAL SINGLE MOUNTING FACILITY
Related Searches:
8948-4015-80
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013387600
NSN
5961-01-338-7600
8948-4015-80
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013387600
NSN
5961-01-338-7600
MFG
HARRIS CORPORATION DBA HARRIS RF COMMUNICATION
Description
III END ITEM IDENTIFICATION: AN/TYQ-23(V)1(V)2
Related Searches:
1N3090
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013388026
NSN
5961-01-338-8026
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
P16982
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013388309
NSN
5961-01-338-8309
MFG
GE AVIATION SYSTEMS LLC DBA GE AVIATION
Description
RETAINER,SEMICONDUCTOR DEVICE
Related Searches:
G9520
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013388310
NSN
5961-01-338-8310
MFG
GE AVIATION SYSTEMS LLC DBA GE AVIATION
Description
RETAINER,SEMICONDUCTOR DEVICE
Related Searches:
JANTXV1N3890R
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013388380
NSN
5961-01-338-8380
JANTXV1N3890R
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013388380
NSN
5961-01-338-8380
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 175.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N3890R
FEATURES PROVIDED: REVERSE POLARITY
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/304
OVERALL HEIGHT: 1.253 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/304 GOVERNMENT SPECIFICATION
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
JAN2N5794
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013388381
NSN
5961-01-338-8381
JAN2N5794
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013388381
NSN
5961-01-338-8381
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 600.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N5794
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/495
OVERALL LENGTH: 0.185 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/495 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN ALL TRANSISTOR
Related Searches:
25577-3635
TRANSISTOR
NSN, MFG P/N
5961013388795
NSN
5961-01-338-8795
MFG
SMITHS AEROSPACE INC. ELECTRONIC SYSTEMS-GRAND RAPIDS
Description
III END ITEM IDENTIFICATION: 1680-01-336-8021
