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5961-01-388-0079
20 Products
MTM20T10
TRANSISTOR
NSN, MFG P/N
5961013880079
NSN
5961-01-388-0079
MFG
FREESCALE SEMICONDUCTOR INC.
Description
TRANSISTOR
Related Searches:
2N7054
TRANSISTOR
NSN, MFG P/N
5961013875525
NSN
5961-01-387-5525
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 NOMINAL BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
Related Searches:
13079296-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013875847
NSN
5961-01-387-5847
13079296-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013875847
NSN
5961-01-387-5847
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DIV LASER SYSTEMS
Description
DESIGN CONTROL REFERENCE: 13079296-2
III END ITEM IDENTIFICATION: USED ON TADS PNVS
MANUFACTURERS CODE: 34860
THE MANUFACTURERS DATA:
Related Searches:
5EZAA00011
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013875932
NSN
5961-01-387-5932
5EZAA00011
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013875932
NSN
5961-01-387-5932
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
5EZAA00019
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013875932
NSN
5961-01-387-5932
5EZAA00019
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013875932
NSN
5961-01-387-5932
MFG
RAYTHEON MARINE CO HQ
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
NJS6924
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013875932
NSN
5961-01-387-5932
MFG
NATIONAL ELECTRONICS DIV OF RICHARDSON ELECTRONICS LTD
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
A531A266-127
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013876942
NSN
5961-01-387-6942
A531A266-127
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013876942
NSN
5961-01-387-6942
MFG
KEARFOTT CORPORATION DBA KEARFOTT DIV GUIDANCE AND NAVIGATION DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 75.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL DIAMETER: 0.055 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEMS
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/437 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION AND 88818-Y179A240 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.1 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
JANTXV1N5523B-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013876942
NSN
5961-01-387-6942
JANTXV1N5523B-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013876942
NSN
5961-01-387-6942
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 75.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL DIAMETER: 0.055 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEMS
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/437 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION AND 88818-Y179A240 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.1 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
MMD701L
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013876992
NSN
5961-01-387-6992
MFG
FREESCALE SEMICONDUCTOR INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
SS-36034
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013876992
NSN
5961-01-387-6992
MFG
THALES COMMUNICATIONS INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
BC184B
TRANSISTOR
NSN, MFG P/N
5961013877623
NSN
5961-01-387-7623
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 15.00 NANOAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN
FEATURES PROVIDED: LOW POWER
POWER RATING PER CHARACTERISTIC: 300.0 WATTS MAXIMUM AVERAGE OFF-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TRANSFER RATIO: 500.0 NOMINAL STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
BC184C
TRANSISTOR
NSN, MFG P/N
5961013877623
NSN
5961-01-387-7623
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
CURRENT RATING PER CHARACTERISTIC: 15.00 NANOAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN
FEATURES PROVIDED: LOW POWER
POWER RATING PER CHARACTERISTIC: 300.0 WATTS MAXIMUM AVERAGE OFF-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TRANSFER RATIO: 500.0 NOMINAL STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
336A3401AA G08
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013877954
NSN
5961-01-387-7954
336A3401AA G08
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013877954
NSN
5961-01-387-7954
MFG
GENERAL ELECTRIC CO GE DRIVE SYSTEMS GOVERNMENT BUSINESS OPN
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
91501986
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013878685
NSN
5961-01-387-8685
MFG
THALES
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
H5601A0283
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013878685
NSN
5961-01-387-8685
H5601A0283
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013878685
NSN
5961-01-387-8685
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
TR169-07
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013878770
NSN
5961-01-387-8770
MFG
ELDEC CORPORATION DBA CRANE AEROSPACE & ELECTRONIC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
391-0352-032
TRANSISTOR
NSN, MFG P/N
5961013878798
NSN
5961-01-387-8798
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
TRANSISTOR
Related Searches:
922-6120-022
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013880021
NSN
5961-01-388-0021
922-6120-022
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013880021
NSN
5961-01-388-0021
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
CAPACITANCE RATING IN PICOFARADS: 3.0 MAXIMUM
FUNCTION FOR WHICH DESIGNED: SWITCHING
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 1.225 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 3.0 KILOWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL TEST FEATURES: SCREENED TO 580-0629-002
TERMINAL TYPE AND QUANTITY: 2 PIN
TEST DATA DOCUMENT: 13499-922-6120 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 NOMINAL BREAKDOWN VOLTAGE, DC
Related Searches:
UM9731
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013880021
NSN
5961-01-388-0021
MFG
MICRO USPD INC
Description
CAPACITANCE RATING IN PICOFARADS: 3.0 MAXIMUM
FUNCTION FOR WHICH DESIGNED: SWITCHING
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 1.225 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 3.0 KILOWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL TEST FEATURES: SCREENED TO 580-0629-002
TERMINAL TYPE AND QUANTITY: 2 PIN
TEST DATA DOCUMENT: 13499-922-6120 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 NOMINAL BREAKDOWN VOLTAGE, DC
Related Searches:
G263597-9
TRANSISTOR
NSN, MFG P/N
5961013880055
NSN
5961-01-388-0055
MFG
RAYMARINE INC
Description
INTERNAL CONFIGURATION: JUNCTION CONTACT
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
