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5961-01-331-1813
20 Products
5816764
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013311813
NSN
5961-01-331-1813
5816764
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013311813
NSN
5961-01-331-1813
MFG
NAVAL SEA SYSTEMS COMMAND
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 15.000 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 REVERSE VOLTAGE, PEAK
DESIGN CONTROL REFERENCE: 5816764
III END ITEM IDENTIFICATION: COMMAND AND CONTROL SECTION,TORPEDO MK50
MANUFACTURERS CODE: 53711
MOUNTING METHOD: CLIP
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 1.000 INCHES NOMINAL
OVERALL LENGTH: 2.230 INCHES MINIMUM AND 2.270 INCHES MAXIMUM
OVERALL WIDTH: 0.320 INCHES MINIMUM AND 0.360 INCHES MAXIMUM
SPECIAL FEATURES: SINGLE PHASE,FAST-RECOVERY
TERMINAL TYPE AND QUANTITY: 3 PIN
THE MANUFACTURERS DATA:
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5E4820/12-0009
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013312161
NSN
5961-01-331-2161
5E4820/12-0009
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013312161
NSN
5961-01-331-2161
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
SEMICONDUCTOR DEVICE,DIODE
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5E4820/51-0012
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013312162
NSN
5961-01-331-2162
5E4820/51-0012
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013312162
NSN
5961-01-331-2162
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
SEMICONDUCTOR DEVICE,DIODE
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5E4820/12-0014
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013312163
NSN
5961-01-331-2163
5E4820/12-0014
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013312163
NSN
5961-01-331-2163
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
SEMICONDUCTOR DEVICE,DIODE
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5E4850/15-0004
TRANSISTOR
NSN, MFG P/N
5961013312399
NSN
5961-01-331-2399
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
(NON-CORE DATA) SUPPLEMENTARY FEATURES: COGNIZANT SERVICE - ROYAL AUSTRALIAN NAVY
III END ITEM IDENTIFICATION: S70B-2,SEAHAWK HELICOPTER
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5E4850/82-0001
TRANSISTOR
NSN, MFG P/N
5961013312400
NSN
5961-01-331-2400
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
(NON-CORE DATA) SUPPLEMENTARY FEATURES: COGNIZANT SERVICE - ROYAL AUSTRALIAN NAVY
III END ITEM IDENTIFICATION: S70B-2,SEAHAWK HELICOPTER
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5E4820/51-0017
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013312401
NSN
5961-01-331-2401
5E4820/51-0017
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013312401
NSN
5961-01-331-2401
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
(NON-CORE DATA) SUPPLEMENTARY FEATURES: OCOGNIZANT SERVICE - ROYAL AUSTRALIAN NAVY
III END ITEM IDENTIFICATION: S70B-2,SEAHAWK HELICOPTER
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5E4820/54-0004
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013312402
NSN
5961-01-331-2402
5E4820/54-0004
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013312402
NSN
5961-01-331-2402
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
(NON-CORE DATA) SUPPLEMENTARY FEATURES: COGNIZANT SERVICE - ROYAL AUSTRALIAN NAVY
III END ITEM IDENTIFICATION: S70B-2,SEAHAWK HELICOPTER
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5E4820/54-0008
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013312403
NSN
5961-01-331-2403
5E4820/54-0008
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013312403
NSN
5961-01-331-2403
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
(NON-CORE DATA) SUPPLEMENTARY FEATURES: COGNIZANT SERVICE - ROYAL AUSTRALIAN NAVY
III END ITEM IDENTIFICATION: S70B-2,SEAHAWK HELICOPTER
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TRANSISTOR
NSN, MFG P/N
5961013312896
NSN
5961-01-331-2896
MFG
HAGENUK MARINEKOMMUNIKATION GMBH
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 6.00 AMPERES MAXIMUM DRAIN CURRENT
III END ITEM IDENTIFICATION: TACTICAL AIR OPERATIONS MODULE AN/TYQ-23(V)1
INCLOSURE MATERIAL: METAL AND CERAMIC
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 7.5 MILLIMETERS MAXIMUM
OVERALL LENGTH: 25.2 MILLIMETERS MAXIMUM
OVERALL WIDTH: 15.9 MILLIMETERS MINIMUM
POWER RATING PER CHARACTERISTIC: 30.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
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TRANSISTOR
NSN, MFG P/N
5961013312896
NSN
5961-01-331-2896
MFG
FREESCALE SEMICONDUCTOR INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 6.00 AMPERES MAXIMUM DRAIN CURRENT
III END ITEM IDENTIFICATION: TACTICAL AIR OPERATIONS MODULE AN/TYQ-23(V)1
INCLOSURE MATERIAL: METAL AND CERAMIC
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 7.5 MILLIMETERS MAXIMUM
OVERALL LENGTH: 25.2 MILLIMETERS MAXIMUM
OVERALL WIDTH: 15.9 MILLIMETERS MINIMUM
POWER RATING PER CHARACTERISTIC: 30.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
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Q25-0033-001
TRANSISTOR
NSN, MFG P/N
5961013312896
NSN
5961-01-331-2896
MFG
HARRIS CORPORATION DBA HARRIS RF COMMUNICATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 6.00 AMPERES MAXIMUM DRAIN CURRENT
III END ITEM IDENTIFICATION: TACTICAL AIR OPERATIONS MODULE AN/TYQ-23(V)1
INCLOSURE MATERIAL: METAL AND CERAMIC
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 7.5 MILLIMETERS MAXIMUM
OVERALL LENGTH: 25.2 MILLIMETERS MAXIMUM
OVERALL WIDTH: 15.9 MILLIMETERS MINIMUM
POWER RATING PER CHARACTERISTIC: 30.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
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TRANSISTOR
NSN, MFG P/N
5961013312897
NSN
5961-01-331-2897
MFG
LITTON SYSTEMS INC. DIV NAVIGATION SYSTEMS DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 0.25 AMPERES MAXIMUM BASE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: TACTICAL AIR OPERATIONS CENTRAL AN/TYQ-23(V)1
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.409 INCHES MINIMUM AND 1.573 INCHES MAXIMUM
OVERALL WIDTH: 0.990 INCHES MINIMUM AND 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND
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NSN, MFG P/N
5961013312897
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5961-01-331-2897
MFG
MICROSEMI PPC INC
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 0.25 AMPERES MAXIMUM BASE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: TACTICAL AIR OPERATIONS CENTRAL AN/TYQ-23(V)1
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.409 INCHES MINIMUM AND 1.573 INCHES MAXIMUM
OVERALL WIDTH: 0.990 INCHES MINIMUM AND 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND
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NSN, MFG P/N
5961013312897
NSN
5961-01-331-2897
MFG
SEMICONDUCTOR TECHNOLOGY INC DBA S T I
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 0.25 AMPERES MAXIMUM BASE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: TACTICAL AIR OPERATIONS CENTRAL AN/TYQ-23(V)1
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.409 INCHES MINIMUM AND 1.573 INCHES MAXIMUM
OVERALL WIDTH: 0.990 INCHES MINIMUM AND 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND
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NSN, MFG P/N
5961013312897
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5961-01-331-2897
MFG
SOLID STATE DEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 0.25 AMPERES MAXIMUM BASE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: TACTICAL AIR OPERATIONS CENTRAL AN/TYQ-23(V)1
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.409 INCHES MINIMUM AND 1.573 INCHES MAXIMUM
OVERALL WIDTH: 0.990 INCHES MINIMUM AND 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND
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NSN, MFG P/N
5961013312898
NSN
5961-01-331-2898
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL
Description
CURRENT RATING PER CHARACTERISTIC: 16.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT-DARLINGTON CONNECTED
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.350 INCHES NOMINAL
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATI
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NSN, MFG P/N
5961013312898
NSN
5961-01-331-2898
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 16.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT-DARLINGTON CONNECTED
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.350 INCHES NOMINAL
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATI
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013312899
NSN
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MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION
Description
III END ITEM IDENTIFICATION: AN/TYQ-23(V)1 TACTICAL AIROPERATIONS CENTRAL
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INTERNATIONAL RECTIFIER CORPORATION DIV HI-REL
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CRITICALITY CODE JUSTIFICATION: ZZZY
CURRENT RATING PER CHARACTERISTIC: 23.00 AMPERES MAXIMUM DRAIN CURRENT
DESIGN CONTROL REFERENCE: KFU165B
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
MANUFACTURERS CODE: 3BUT6
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
OVERALL HEIGHT: 0.249 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
OVERALL LENGTH: 0.790 INCHES MINIMUM AND 0.800 INCHES MAXIMUM
OVERALL WIDTH: 0.535 INCHES MINIMUM AND 0.545 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 125.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: REFERENCE NUMBER DIFFERENTIATING MATERIAL WILL BE IAW NAVAL INVENTORY CONTROL POINT ACTIVITY HX(QUALITY CONTROL,MANUFACTURING ANS TESTING SPECIFICATIONS AVAILABLE AR THE DLA ICP
SEMICONDUCTOR MATERIAL: SILI
