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5961-01-437-7384
20 Products
7920719-00
TRANSISTOR
NSN, MFG P/N
5961014377384
NSN
5961-01-437-7384
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 6.00 AMPERES MAXIMUM DRAIN CURRENT AND 22.00 AMPERES MAXIMUM OFF-STATE CURRENT, PEAK
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: DRAIN
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.495 INCHES MAXIMUM
OVERALL LENGTH: 1.540 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TEST DATA DOCUMENT: 90536-7920719 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MINIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
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301304
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014365980
NSN
5961-01-436-5980
301304
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014365980
NSN
5961-01-436-5980
MFG
RICHARDS IMAGERY INTERPRETATION SYSTEMS L.L.C.
Description
III END ITEM IDENTIFICATION: GROUND PHOTOGRAPHIC EQUIPMENT, RICHARDS CORP
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301226-2
TRANSISTOR
NSN, MFG P/N
5961014365984
NSN
5961-01-436-5984
MFG
RICHARDS IMAGERY INTERPRETATION SYSTEMS L.L.C.
Description
III END ITEM IDENTIFICATION: GROUND PHOTOGRAPHIC EQUIPMENT, RICHARDS CORP
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RECTIFIER,SEMICONDUCTOR DEVICE
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5961014368135
NSN
5961-01-436-8135
ED2001
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014368135
NSN
5961-01-436-8135
MFG
CONTINENTAL ELECTRONICS CORPORATION
Description
III END ITEM IDENTIFICATION: RSRP RADAR EQUIPMENT
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SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014369870
NSN
5961-01-436-9870
C090.LED
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014369870
NSN
5961-01-436-9870
MFG
PARKER HANNIFIN CORPORATION DIV HYDRAULIC FILTER DIVISION - UCC PRODUCTS
Description
DESIGN CONTROL REFERENCE: C090.LED
III END ITEM IDENTIFICATION: PREPROVISIONING SUPPORT NAVICP IS POE
MANUFACTURERS CODE: 012A4
THE MANUFACTURERS DATA:
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SEMICONDUCTOR DEVICE ASSEMBLY
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9 2559 12 100
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014370706
NSN
5961-01-437-0706
MFG
BASLER ELECTRIC COMPANY
Description
III END ITEM IDENTIFICATION: VOLTAGE REGULATOR
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BD240
TRANSISTOR
NSN, MFG P/N
5961014370981
NSN
5961-01-437-0981
MFG
HARRIS MICROWAVE SEMICONDUCTOR INC SUB OF HARRIS CORP
Description
TRANSISTOR
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JANTX1N388O
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014371531
NSN
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014371531
NSN
5961-01-437-1531
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N388O
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
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NSN
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014372320
NSN
5961-01-437-2320
MFG
RAYTHEON MARINE CO HQ
Description
(NON-CORE DATA) FRAGILITY FACTOR: MODERATELY RUGGED
III END ITEM IDENTIFICATION: AN/SPS-69
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77C953324P14
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014372398
NSN
5961-01-437-2398
MFG
LOCKHEED MARTIN CORPORATION DBA MS2 DIV MS2 RADAR SYSTEMS
Description
SEMICONDUCTOR DEVICE,DIODE
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77C953324P13
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014372708
NSN
5961-01-437-2708
77C953324P13
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014372708
NSN
5961-01-437-2708
MFG
LOCKHEED MARTIN CORPORATION DBA MS2 DIV MS2 RADAR SYSTEMS
Description
SEMICONDUCTOR DEVICE,DIODE
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48-2073B02
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014372989
NSN
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
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5961-01-437-2989
MFG
TERRAQUIP INCORPORATED
Description
III END ITEM IDENTIFICATION: RADAR EQUIPMENT
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72B550001-2003
TRANSMITTER HARPOON
NSN, MFG P/N
5961014373483
NSN
5961-01-437-3483
MFG
NAVAL SEA SYSTEMS COMMAND
Description
TRANSMITTER HARPOON
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1N5442C
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014374142
NSN
5961-01-437-4142
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 1N5442C
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
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299-648
TRANSISTOR
NSN, MFG P/N
5961014375189
NSN
5961-01-437-5189
MFG
RADIOSPARES SAS
Description
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220AB
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.650 INCHES MAXIMUM
OVERALL WIDTH: 0.420 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.580 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
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96137130
TRANSISTOR
NSN, MFG P/N
5961014375189
NSN
5961-01-437-5189
MFG
THALES
Description
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220AB
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.650 INCHES MAXIMUM
OVERALL WIDTH: 0.420 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.580 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
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5961014375189
NSN
5961-01-437-5189
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SILICONIX INCORPORATED D IV SILICONIX
Description
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220AB
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.650 INCHES MAXIMUM
OVERALL WIDTH: 0.420 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.580 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
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SEMICONDUCTOR DEVICE ASSEMBLY
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5961014375495
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SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014375495
NSN
5961-01-437-5495
MFG
MAC GREGOR USA INC
Description
III END ITEM IDENTIFICATION: CONTROL PANEL
III FSC APPLICATION DATA: SEMICONDUCTOR DEVICES AND SIMILAR EQUIPMENT
SPECIAL FEATURES: GSEMICONDUCTOR DEVICE AGAVGCONTROL PANEL
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NSN, MFG P/N
5961014375495
NSN
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SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014375495
NSN
5961-01-437-5495
MFG
PHOENIX CONTACT SERVICES INC.
Description
III END ITEM IDENTIFICATION: CONTROL PANEL
III FSC APPLICATION DATA: SEMICONDUCTOR DEVICES AND SIMILAR EQUIPMENT
SPECIAL FEATURES: GSEMICONDUCTOR DEVICE AGAVGCONTROL PANEL
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1N4822
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
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NSN
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MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 40.00 AMPERES MAXIMUM REVERSE CURRENT, PEAK
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
