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5961-01-442-1346
20 Products
007-00337-00
TRANSISTOR
NSN, MFG P/N
5961014421346
NSN
5961-01-442-1346
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-OLATHE
Description
TRANSISTOR
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1858-0110
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014421999
NSN
5961-01-442-1999
1858-0110
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014421999
NSN
5961-01-442-1999
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
COMPONENT NAME AND QUANTITY: 4 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 0.50 MILLIAMPERES MAXIMUM DRAIN CURRENT ALL SEMICONDUCTOR
III END ITEM IDENTIFICATION: SIGNAL GENERATOR
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -65.0 DEG CELSIUS CASE AND 175.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 14
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.280 INCHES MAXIMUM
OVERALL LENGTH: 0.785 INCHES MAXIMUM
OVERALL WIDTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1900.0 MILLIWATTS MAXIMUM NONREACTIVE POWER INPUT, INSTANTANEOUS TOTAL, TO ALL TERMINALS ALL SEMICONDUCTOR
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR
SPECIAL FEATURES: 19 MM LG., 6.3 MM W., 5.0 MM H.
TERMINAL LENGTH: 0.120 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 14 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 40.0 MAXIMUM WORKING PEAK OFF-STATE VOLTAGE ALL
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SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014421999
NSN
5961-01-442-1999
MAT04FP
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014421999
NSN
5961-01-442-1999
MFG
ANALOG DEVICES INC. DIV CORPORATE HEADQUARTERS
Description
COMPONENT NAME AND QUANTITY: 4 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 0.50 MILLIAMPERES MAXIMUM DRAIN CURRENT ALL SEMICONDUCTOR
III END ITEM IDENTIFICATION: SIGNAL GENERATOR
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -65.0 DEG CELSIUS CASE AND 175.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 14
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.280 INCHES MAXIMUM
OVERALL LENGTH: 0.785 INCHES MAXIMUM
OVERALL WIDTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1900.0 MILLIWATTS MAXIMUM NONREACTIVE POWER INPUT, INSTANTANEOUS TOTAL, TO ALL TERMINALS ALL SEMICONDUCTOR
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR
SPECIAL FEATURES: 19 MM LG., 6.3 MM W., 5.0 MM H.
TERMINAL LENGTH: 0.120 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 14 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 40.0 MAXIMUM WORKING PEAK OFF-STATE VOLTAGE ALL
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23-06885 REV D D10 1-2
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NSN, MFG P/N
5961014422018
NSN
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MFG
PHOENIX CONTACT SERVICES INC.
Description
III END ITEM IDENTIFICATION: CONTROL PANEL
SPECIAL FEATURES: RECTIFIER ASS'Y
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5961014422041
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5961-01-442-2041
797411-001 REV E ITEM NO. 2
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NSN, MFG P/N
5961014422041
NSN
5961-01-442-2041
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION
Description
III END ITEM IDENTIFICATION: POWER SUPPLY
SPECIAL FEATURES: SEMI-CONDUCTOR DEVICE
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NSN, MFG P/N
5961014422041
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5961-01-442-2041
MFG
MICROSEMI CORP.-POWER MANAGEMENT GROUP HOLDING DBA BABCOCK
Description
III END ITEM IDENTIFICATION: POWER SUPPLY
SPECIAL FEATURES: SEMI-CONDUCTOR DEVICE
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NSN, MFG P/N
5961014422041
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MFG
SEMTECH CORPORATION
Description
III END ITEM IDENTIFICATION: POWER SUPPLY
SPECIAL FEATURES: SEMI-CONDUCTOR DEVICE
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5961014422047
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NSN
5961-01-442-2047
MFG
MILLER ELECTRIC MFG CO
Description
III END ITEM IDENTIFICATION: WELDING MACHINE
SPECIAL FEATURES: SEMI-CONDUCTOR DEVICE
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NSN, MFG P/N
5961014422057
NSN
5961-01-442-2057
MFG
AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM DRAIN CURRENT
III END ITEM IDENTIFICATION: SIGNAL GENERATOR
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 2.38 MILLIMETERS MAXIMUM
OVERALL LENGTH: 17.14 MILLIMETERS MAXIMUM
OVERALL WIDTH: 6.73 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 20.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 50.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
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5961014422057
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FREESCALE SEMICONDUCTOR INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM DRAIN CURRENT
III END ITEM IDENTIFICATION: SIGNAL GENERATOR
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 2.38 MILLIMETERS MAXIMUM
OVERALL LENGTH: 17.14 MILLIMETERS MAXIMUM
OVERALL WIDTH: 6.73 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 20.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 50.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
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TRANSISTOR
NSN, MFG P/N
5961014422080
NSN
5961-01-442-2080
MFG
AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER
Description
CURRENT RATING PER CHARACTERISTIC: 35.00 AMPERES NOMINAL COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: SIGNAL GENERATOR
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.11 MILLIMETERS MAXIMUM
OVERALL LENGTH: 3.04 MILLIMETERS MAXIMUM
OVERALL WIDTH: 2.50 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
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5961014422080
NSN
5961-01-442-2080
MFG
HEWLETT PACKARD CO
Description
CURRENT RATING PER CHARACTERISTIC: 35.00 AMPERES NOMINAL COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: SIGNAL GENERATOR
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.11 MILLIMETERS MAXIMUM
OVERALL LENGTH: 3.04 MILLIMETERS MAXIMUM
OVERALL WIDTH: 2.50 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
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TRANSISTOR
NSN, MFG P/N
5961014422080
NSN
5961-01-442-2080
MFG
PHILIPS CIRCUIT ASSEMBLIES
Description
CURRENT RATING PER CHARACTERISTIC: 35.00 AMPERES NOMINAL COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: SIGNAL GENERATOR
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.11 MILLIMETERS MAXIMUM
OVERALL LENGTH: 3.04 MILLIMETERS MAXIMUM
OVERALL WIDTH: 2.50 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
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NSN, MFG P/N
5961014422086
NSN
5961-01-442-2086
MFG
AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER
Description
III END ITEM IDENTIFICATION: SIGNAL GENERATOR
SPECIAL FEATURES: 6.5 MM LG., 3.5 MM W., 1.6 MM H.
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NSN, MFG P/N
5961014422086
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FREESCALE SEMICONDUCTOR INC.
Description
III END ITEM IDENTIFICATION: SIGNAL GENERATOR
SPECIAL FEATURES: 6.5 MM LG., 3.5 MM W., 1.6 MM H.
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NSN, MFG P/N
5961014422117
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AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES NOMINAL DRAIN CURRENT
III END ITEM IDENTIFICATION: SIGNAL GENERATOR
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 2.38 MILLIMETERS MAXIMUM
OVERALL LENGTH: 10.38 MILLIMETERS MAXIMUM
OVERALL WIDTH: 6.73 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.75 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MINIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
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FREESCALE SEMICONDUCTOR INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES NOMINAL DRAIN CURRENT
III END ITEM IDENTIFICATION: SIGNAL GENERATOR
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 2.38 MILLIMETERS MAXIMUM
OVERALL LENGTH: 10.38 MILLIMETERS MAXIMUM
OVERALL WIDTH: 6.73 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.75 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MINIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
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5961014422124
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AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: SIGNAL GENERATOR
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.11 MILLIMETERS MAXIMUM
OVERALL LENGTH: 3.04 MILLIMETERS MAXIMUM
OVERALL WIDTH: 2.50 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 350.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
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5961014422124
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5961-01-442-2124
MFG
HEWLETT PACKARD CO
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: SIGNAL GENERATOR
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.11 MILLIMETERS MAXIMUM
OVERALL LENGTH: 3.04 MILLIMETERS MAXIMUM
OVERALL WIDTH: 2.50 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 350.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
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5961014422124
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5961-01-442-2124
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BAE SYSTEMS AUSTRALIA LTD
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: SIGNAL GENERATOR
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.11 MILLIMETERS MAXIMUM
OVERALL LENGTH: 3.04 MILLIMETERS MAXIMUM
OVERALL WIDTH: 2.50 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 350.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
