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5961-01-466-0560
20 Products
90195-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014660560
NSN
5961-01-466-0560
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
III END ITEM IDENTIFICATION: 0000000000000E/IFSCM05869
Related Searches:
2SA1222
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014660295
NSN
5961-01-466-0295
MFG
ANRITSU COMPANY
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: GENERAL PURPOSE TEST EQUIPMENT
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -55.0 DEG CELSIUS CASE AND 175.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 4
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 12.000 MILLIMETERS MAXIMUM
OVERALL WIDTH: 0.150 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL NONREACTIVE POWER INPUT TO ALL TERMINALS
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: UHF/MICROWAVE PNP BJT
TERMINAL LENGTH: 2.750 MILLIMETERS MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR TO EMITTER, SUSTAINED AND 50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
Related Searches:
RD11EB
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014660297
NSN
5961-01-466-0297
MFG
ANRITSU COMPANY
Description
III END ITEM IDENTIFICATION: GENERAL PURPOSE TEST EQUIPMENT
Related Searches:
2SC1623
TRANSISTOR
NSN, MFG P/N
5961014660298
NSN
5961-01-466-0298
MFG
ANRITSU COMPANY
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: GENERAL PURPOSE TEST EQUIPMENT
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -55.0 DEG CELSIUS CASE AND 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 3
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.083 MILLIMETERS MAXIMUM
OVERALL WIDTH: 0.110 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL NONREACTIVE POWER INPUT TO ALL TERMINALS
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: LOW-FREQUENCY LOW POWER SILICON NPNBJT
TERMINAL LENGTH: 0.047 MILLIMETERS MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR TO EMITTER, SUSTAINED AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
Related Searches:
2SC3568
TRANSISTOR
NSN, MFG P/N
5961014660299
NSN
5961-01-466-0299
MFG
ANRITSU COMPANY
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: GENERAL PURPOSE TEST EQUIPMENT
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -55.0 DEG CELSIUS CASE AND 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 3
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 7.900 MILLIMETERS MAXIMUM
OVERALL WIDTH: 10.200 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 30.0 WATTS MAXIMUM TOTAL NONREACTIVE POWER INPUT TO ALL TERMINALS
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: LOW-FREQUENCY POWER SILICON NPNBJT
TERMINAL LENGTH: 4.400 MILLIMETERS MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR TO EMITTER, SUSTAINED AND 150.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
Related Searches:
2SA1443
TRANSISTOR
NSN, MFG P/N
5961014660384
NSN
5961-01-466-0384
MFG
ANRITSU COMPANY
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: GENERAL PURPOSE ELECTRONIC TEST EQUIPMENT
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -55.0 DEG CELSIUS CASE AND 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 3
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 7.900 MILLIMETERS MAXIMUM
OVERALL WIDTH: 10.200 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 30.0 WATTS MAXIMUM TOTAL NONREACTIVE POWER INPUT TO ALL TERMINALS
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: LOW FREQUENCY POWER SILICON PNP BJT
TERMINAL LENGTH: 4.400 MILLIMETERS MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR TO EMITTER, SUSTAINED AND 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
Related Searches:
RD2.0EB
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014660387
NSN
5961-01-466-0387
MFG
ANRITSU COMPANY
Description
III END ITEM IDENTIFICATION: GENERAL PURPOSE ELECTRONIC TEST EQUIPMENT
Related Searches:
2SC3618
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014660389
NSN
5961-01-466-0389
MFG
ANRITSU COMPANY
Description
CURRENT RATING PER CHARACTERISTIC: 0.70 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: GENERAL PURPOSE ELECTRONIC TEST EQUIPMENT
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -55.0 DEG CELSIUS CASE AND 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 3
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 4.250 MILLIMETERS MAXIMUM
OVERALL WIDTH: 1.600 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM TOTAL NONREACTIVE POWER INPUT TO ALL TERMINALS
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: SINGLE HF POWER SI NPN BJT
TERMINAL LENGTH: 2.600 MILLIMETERS MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR TO EMITTER, SUSTAINED AND 25.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
Related Searches:
2SB799
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014660397
NSN
5961-01-466-0397
MFG
ANRITSU COMPANY
Description
CURRENT RATING PER CHARACTERISTIC: 700.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: GENERAL PURPOSE ELECTRONIC TEST EQUIPMENT
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -65.0 DEG CELSIUS CASE AND 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 3
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 4.250 INCHES MAXIMUM
OVERALL WIDTH: 1.600 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM TOTAL NONREACTIVE POWER INPUT TO ALL TERMINALS
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 2.600 MILLIMETERS MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR TO EMITTER, SUSTAINED AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
Related Searches:
2SA812
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014660399
NSN
5961-01-466-0399
MFG
ANRITSU COMPANY
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: GENERAL PURPOSE ELECTRONIC TEST EQUIPMENT
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -55.0 DEG CELSIUS CASE AND 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 3
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 2.500 MILLIMETERS MAXIMUM
OVERALL WIDTH: 1.100 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL NONREACTIVE POWER INPUT TO ALL TERMINALS
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: LOW FREQUENCY LOW POWER SILICON PNP BJT
TERMINAL LENGTH: 1.400 MILLIMETERS MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR TO EMITTER, SUSTAINED AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
Related Searches:
90190-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014660552
NSN
5961-01-466-0552
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
III END ITEM IDENTIFICATION: E/IFSCM05869
Related Searches:
SP950706-G
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014660552
NSN
5961-01-466-0552
SP950706-G
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014660552
NSN
5961-01-466-0552
MFG
DISPLAY PRODUCTS INC. DBA DATA DISPLAY PRODUCTS
Description
III END ITEM IDENTIFICATION: E/IFSCM05869
Related Searches:
90193-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014660553
NSN
5961-01-466-0553
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
III END ITEM IDENTIFICATION: 0000000000000E/IFSCM05869
Related Searches:
SP950704-A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014660553
NSN
5961-01-466-0553
SP950704-A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014660553
NSN
5961-01-466-0553
MFG
DISPLAY PRODUCTS INC. DBA DATA DISPLAY PRODUCTS
Description
III END ITEM IDENTIFICATION: 0000000000000E/IFSCM05869
Related Searches:
90191-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014660555
NSN
5961-01-466-0555
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
III END ITEM IDENTIFICATION: 0000000000000E/IFSCM05869
Related Searches:
SP950704-R
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014660555
NSN
5961-01-466-0555
SP950704-R
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014660555
NSN
5961-01-466-0555
MFG
DISPLAY PRODUCTS INC. DBA DATA DISPLAY PRODUCTS
Description
III END ITEM IDENTIFICATION: 0000000000000E/IFSCM05869
Related Searches:
90194-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014660557
NSN
5961-01-466-0557
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
III END ITEM IDENTIFICATION: 0000000000000E/IFSCM05869
Related Searches:
SP950705-R
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014660557
NSN
5961-01-466-0557
SP950705-R
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014660557
NSN
5961-01-466-0557
MFG
DISPLAY PRODUCTS INC. DBA DATA DISPLAY PRODUCTS
Description
III END ITEM IDENTIFICATION: 0000000000000E/IFSCM05869
Related Searches:
90192-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014660559
NSN
5961-01-466-0559
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
III END ITEM IDENTIFICATION: 0000000000000E/IFSCM05869
Related Searches:
SP905704-G
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014660559
NSN
5961-01-466-0559
SP905704-G
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014660559
NSN
5961-01-466-0559
MFG
DISPLAY PRODUCTS INC. DBA DATA DISPLAY PRODUCTS
Description
III END ITEM IDENTIFICATION: 0000000000000E/IFSCM05869
