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5961-00-309-7971
20 Products
8879300001-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003097971
NSN
5961-00-309-7971
8879300001-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003097971
NSN
5961-00-309-7971
MFG
NAVCOM DEFENSE ELECTRONICS INC.
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 95.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.025 INCHES MAXIMUM
OVERALL LENGTH: 0.125 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.125 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 85.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
341D708G01
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961003079943
NSN
5961-00-307-9943
341D708G01
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961003079943
NSN
5961-00-307-9943
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS
Description
RECTIFIER,SEMICONDUCTOR DEVICE
Related Searches:
226309-002
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961003080952
NSN
5961-00-308-0952
226309-002
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961003080952
NSN
5961-00-308-0952
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
III END ITEM IDENTIFICATION: ANTI-SUBMARINE AIRCRAFT S3
MANUFACTURERS CODE: 81413
MFR SOURCE CONTROLLING REFERENCE: 226309-002
OVERALL HEIGHT: 0.250 INCHES NOMINAL
OVERALL LENGTH: 1.000 INCHES NOMINAL
OVERALL WIDTH: 0.620 INCHES NOMINAL
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: 3 PHASE AC INPUT,FULL WAVE RECTIFICATION; TWO NO. 2-5 THD MTG HOLES SPACED 0.7 IN. CENTER TO CENTER
Related Searches:
652-716
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961003080952
NSN
5961-00-308-0952
652-716
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961003080952
NSN
5961-00-308-0952
MFG
MICRO USPD INC
Description
III END ITEM IDENTIFICATION: ANTI-SUBMARINE AIRCRAFT S3
MANUFACTURERS CODE: 81413
MFR SOURCE CONTROLLING REFERENCE: 226309-002
OVERALL HEIGHT: 0.250 INCHES NOMINAL
OVERALL LENGTH: 1.000 INCHES NOMINAL
OVERALL WIDTH: 0.620 INCHES NOMINAL
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: 3 PHASE AC INPUT,FULL WAVE RECTIFICATION; TWO NO. 2-5 THD MTG HOLES SPACED 0.7 IN. CENTER TO CENTER
Related Searches:
K815-2
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961003080952
NSN
5961-00-308-0952
K815-2
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961003080952
NSN
5961-00-308-0952
MFG
SOLITRON DEVICES INC.
Description
III END ITEM IDENTIFICATION: ANTI-SUBMARINE AIRCRAFT S3
MANUFACTURERS CODE: 81413
MFR SOURCE CONTROLLING REFERENCE: 226309-002
OVERALL HEIGHT: 0.250 INCHES NOMINAL
OVERALL LENGTH: 1.000 INCHES NOMINAL
OVERALL WIDTH: 0.620 INCHES NOMINAL
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: 3 PHASE AC INPUT,FULL WAVE RECTIFICATION; TWO NO. 2-5 THD MTG HOLES SPACED 0.7 IN. CENTER TO CENTER
Related Searches:
SDA112
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961003080952
NSN
5961-00-308-0952
SDA112
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961003080952
NSN
5961-00-308-0952
MFG
SOLID STATE DEVICES INC.
Description
III END ITEM IDENTIFICATION: ANTI-SUBMARINE AIRCRAFT S3
MANUFACTURERS CODE: 81413
MFR SOURCE CONTROLLING REFERENCE: 226309-002
OVERALL HEIGHT: 0.250 INCHES NOMINAL
OVERALL LENGTH: 1.000 INCHES NOMINAL
OVERALL WIDTH: 0.620 INCHES NOMINAL
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: 3 PHASE AC INPUT,FULL WAVE RECTIFICATION; TWO NO. 2-5 THD MTG HOLES SPACED 0.7 IN. CENTER TO CENTER
Related Searches:
1N1184AS
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003084390
NSN
5961-00-308-4390
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 08748
MFR SOURCE CONTROLLING REFERENCE: DI26-01A
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
Related Searches:
DI26-01A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003084390
NSN
5961-00-308-4390
MFG
ELDEC CORPORATION DBA CRANE AEROSPACE & ELECTRONIC
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 08748
MFR SOURCE CONTROLLING REFERENCE: DI26-01A
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
Related Searches:
DI26-02A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003084391
NSN
5961-00-308-4391
MFG
ELDEC CORPORATION DBA CRANE AEROSPACE & ELECTRONIC
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 08748
MFR SOURCE CONTROLLING REFERENCE: DI26-02A
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
Related Searches:
1C3577-1
TRANSISTOR
NSN, MFG P/N
5961003086514
NSN
5961-00-308-6514
MFG
GE AVIATIONS SYSTEMS LLC DBA GE AVIATION DIV ELECTRICAL POWER-POMPANO
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.290 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.2 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
S6980
TRANSISTOR
NSN, MFG P/N
5961003086514
NSN
5961-00-308-6514
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.290 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.2 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
TA7555
TRANSISTOR
NSN, MFG P/N
5961003089395
NSN
5961-00-308-9395
MFG
RCA CORP DISTRIBUTOR AND SPECIAL PRODUCTS DIV
Description
DESIGN CONTROL REFERENCE: TA7555
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 21921
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL HEIGHT: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
13220E3756
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961003092551
NSN
5961-00-309-2551
13220E3756
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961003092551
NSN
5961-00-309-2551
MFG
CECOM LR CENTER
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
DESIGN CONTROL REFERENCE: MCR106-2
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: GATE
INTERNAL CONFIGURATION: POINT CONTACT
MANUFACTURERS CODE: 04713
SEMICONDUCTOR MATERIAL: SILICON
THE MANUFACTURERS DATA:
Related Searches:
MCR106-2
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961003092551
NSN
5961-00-309-2551
MCR106-2
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961003092551
NSN
5961-00-309-2551
MFG
FREESCALE SEMICONDUCTOR INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
DESIGN CONTROL REFERENCE: MCR106-2
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: GATE
INTERNAL CONFIGURATION: POINT CONTACT
MANUFACTURERS CODE: 04713
SEMICONDUCTOR MATERIAL: SILICON
THE MANUFACTURERS DATA:
Related Searches:
D812B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003097412
NSN
5961-00-309-7412
MFG
FEI MICROWAVE INC
Description
FUNCTION FOR WHICH DESIGNED: TUNNEL DIODE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
TERMINAL TYPE AND QUANTITY: 2 PIN
Related Searches:
007-06053-0000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003097940
NSN
5961-00-309-7940
007-06053-0000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003097940
NSN
5961-00-309-7940
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-OLATHE
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MICROAMPERES MAXIMUM PEAK NEGATIVE GATE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.060 INCHES MINIMUM AND 0.126 INCHES MAXIMUM
OVERALL LENGTH: 0.400 INCHES MINIMUM AND 0.420 INCHES MAXIMUM
OVERALL WIDTH: 0.155 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.5 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 RIBBON
TEST DATA DOCUMENT: 22373-007-6053 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MINIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
5082-3040
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003097940
NSN
5961-00-309-7940
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MICROAMPERES MAXIMUM PEAK NEGATIVE GATE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.060 INCHES MINIMUM AND 0.126 INCHES MAXIMUM
OVERALL LENGTH: 0.400 INCHES MINIMUM AND 0.420 INCHES MAXIMUM
OVERALL WIDTH: 0.155 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.5 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 RIBBON
TEST DATA DOCUMENT: 22373-007-6053 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MINIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
5082-494Z
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003097940
NSN
5961-00-309-7940
MFG
HEWLETT PACKARD CO
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MICROAMPERES MAXIMUM PEAK NEGATIVE GATE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.060 INCHES MINIMUM AND 0.126 INCHES MAXIMUM
OVERALL LENGTH: 0.400 INCHES MINIMUM AND 0.420 INCHES MAXIMUM
OVERALL WIDTH: 0.155 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.5 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 RIBBON
TEST DATA DOCUMENT: 22373-007-6053 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MINIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
88790000-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003097940
NSN
5961-00-309-7940
88790000-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003097940
NSN
5961-00-309-7940
MFG
NAVCOM DEFENSE ELECTRONICS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MICROAMPERES MAXIMUM PEAK NEGATIVE GATE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.060 INCHES MINIMUM AND 0.126 INCHES MAXIMUM
OVERALL LENGTH: 0.400 INCHES MINIMUM AND 0.420 INCHES MAXIMUM
OVERALL WIDTH: 0.155 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.5 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 RIBBON
TEST DATA DOCUMENT: 22373-007-6053 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MINIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
PS103309
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003097940
NSN
5961-00-309-7940
MFG
SELEX COMMUNICATIONS LTD
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MICROAMPERES MAXIMUM PEAK NEGATIVE GATE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.060 INCHES MINIMUM AND 0.126 INCHES MAXIMUM
OVERALL LENGTH: 0.400 INCHES MINIMUM AND 0.420 INCHES MAXIMUM
OVERALL WIDTH: 0.155 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.5 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 RIBBON
TEST DATA DOCUMENT: 22373-007-6053 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MINIMUM BREAKDOWN VOLTAGE, DC
