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5961-01-482-0845

20 Products

SFT5013TX

TRANSISTOR

NSN, MFG P/N

5961014820845

NSN

5961-01-482-0845

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SFT5013TX

TRANSISTOR

NSN, MFG P/N

5961014820845

NSN

5961-01-482-0845

MFG

SOLID STATE DEVICES INC.

Description

III PART NAME ASSIGNED BY CONTROLLING AGENCY: PNP TRANSISTOR
MOUNTING METHOD: TERMINAL
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 NOMINAL BASE SUPPLY VOLTAGE

JANTX1N6165AUS

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014820864

NSN

5961-01-482-0864

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JANTX1N6165AUS

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014820864

NSN

5961-01-482-0864

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CRITICALITY CODE JUSTIFICATION: AGAV
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N6165AUS
III END ITEM IDENTIFICATION: DISPLAY PANEL
MANUFACTURERS CODE: 81349
OVERALL DIAMETER: 0.185 INCHES MAXIMUM
OVERALL LENGTH: 0.195 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1500.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: HIGH SURGE CAPACITY; TRIPLE LAYER PASSIVATION; SUBMINIATURE TYPE; MEATLLURGICALLY BONDED; VOIDLESS HERMETICALLY SEALED GLASS PACKAGE; DYNAMIC IMPEDENCE AND REVERSE LEAKAGE LOWEST AVAILABLE

JAN1N5544BUR-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014820881

NSN

5961-01-482-0881

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JAN1N5544BUR-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014820881

NSN

5961-01-482-0881

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CRITICALITY CODE JUSTIFICATION: AGAV
CURRENT RATING PER CHARACTERISTIC: 0.01 MICROAMPERES NOMINAL REVERSE CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N5544BUR-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: FIGHTER AIRCRAFT-FIRST (F28 E/F); FIRST PBL
III PART NAME ASSIGNED BY CONTROLLING AGENCY: INAVY: DIODE, ZENER, AIRCRAFT
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MOUNTING METHOD: PRESS FIT
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/437
OVERALL LENGTH: 0.130 INCHES MINIMUM AND 0.146 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: MODIFIED; UNLEADED/SURFACE MOUNTED; METALLURGICAL BOND
TERMINAL CIRCLE DIAMETER: 0.063 INCHES MINIMUM AND 0.067 INCHES MAXIMUM
TERMINAL LENGTH: 0.016 INCHES MINIMUM AND 0.022 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 28.0 NOMINAL FORWARD VOLTAGE, DC

JAN1N5533BUR-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014820915

NSN

5961-01-482-0915

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JAN1N5533BUR-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014820915

NSN

5961-01-482-0915

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CRITICALITY CODE JUSTIFICATION: AGAV
CURRENT RATING PER CHARACTERISTIC: 0.01 MICROAMPERES NOMINAL REVERSE CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N5533BUR-1
III END ITEM IDENTIFICATION: FIGHTER AIRCRAFT-FIRST (F18 E/F); FIRST PBL
III PART NAME ASSIGNED BY CONTROLLING AGENCY: INAVY: DIODE, ZENER, AIRCRAFT
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MOUNTING METHOD: PRESS FIT
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/437
OVERALL LENGTH: 0.130 INCHES MINIMUM AND 0.146 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: MODIFIED; UNLEADED/SURFACE MOUNTED; METALLURGICAL BOND
TERMINAL CIRCLE DIAMETER: 0.063 INCHES MINIMUM AND 0.067 INCHES MAXIMUM
TERMINAL LENGTH: 0.016 INCHES MINIMUM AND 0.022 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 13.0 NOMINAL FORWARD VOLTAGE, DC

JAN1N5532BUR-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014820917

NSN

5961-01-482-0917

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JAN1N5532BUR-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014820917

NSN

5961-01-482-0917

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CRITICALITY CODE JUSTIFICATION: AGAV
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N5532BUR-1
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
III END ITEM IDENTIFICATION: ELECTRONIC COMPONENT ASSY
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
OVERALL DIAMETER: 0.063 INCHES MINIMUM AND 0.067 INCHES MAXIMUM
OVERALL LENGTH: 0.130 INCHES MINIMUM AND 0.146 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: SURFACE MOUNT AVALANCHE DIODE; HERMATICALLY SEALED GLASS CASING; TIN-LEAD PLATED SOLDERABLE END CAPS; INTERNAL METTALURGICAL BONDING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0

PC72282-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014820941

NSN

5961-01-482-0941

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PC72282-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014820941

NSN

5961-01-482-0941

MFG

ROCKWELL COLLINS AEROSPACE & ELECTRONICS INC. DBA RC DISPLAYS SYSTEMS

Description

III END ITEM IDENTIFICATION: FIGHTER, AIRCRAFT-FIRST
III PART NAME ASSIGNED BY CONTROLLING AGENCY: RECTIFIER, AIRCRAFT

SEN-3179-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014820941

NSN

5961-01-482-0941

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SEN-3179-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014820941

NSN

5961-01-482-0941

MFG

RSM ELECTRON POWER INC . DBA RSM SENSITRON SEMICONDUCTOR

Description

III END ITEM IDENTIFICATION: FIGHTER, AIRCRAFT-FIRST
III PART NAME ASSIGNED BY CONTROLLING AGENCY: RECTIFIER, AIRCRAFT

SFA20NJETX

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014820941

NSN

5961-01-482-0941

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SFA20NJETX

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014820941

NSN

5961-01-482-0941

MFG

SOLID STATE DEVICES INC.

Description

III END ITEM IDENTIFICATION: FIGHTER, AIRCRAFT-FIRST
III PART NAME ASSIGNED BY CONTROLLING AGENCY: RECTIFIER, AIRCRAFT

940-30373-2

TRANSISTOR

NSN, MFG P/N

5961014821289

NSN

5961-01-482-1289

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940-30373-2

TRANSISTOR

NSN, MFG P/N

5961014821289

NSN

5961-01-482-1289

MFG

POWER PARAGON INC DBA POWER SYSTEMS GROUP DIV POWER SYSTEMS GROUP

Description

CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 940-30373-2
MANUFACTURERS CODE: 04801
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:

CM50DY-28H

TRANSISTOR

NSN, MFG P/N

5961014821289

NSN

5961-01-482-1289

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CM50DY-28H

TRANSISTOR

NSN, MFG P/N

5961014821289

NSN

5961-01-482-1289

MFG

POWEREX INC

Description

CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 940-30373-2
MANUFACTURERS CODE: 04801
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:

JANTX1N6330

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014821456

NSN

5961-01-482-1456

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JANTX1N6330

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014821456

NSN

5961-01-482-1456

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CRITICALITY CODE JUSTIFICATION: FEAT
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N6330
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS

JANTX1N752D-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014822240

NSN

5961-01-482-2240

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JANTX1N752D-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014822240

NSN

5961-01-482-2240

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N752D-1
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/127N
OVERALL DIAMETER: 0.055 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL CIRCLE DIAMETER: 0.018 INCHES MINIMUM AND 0.023 INCHES MAXIMUM
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.6 NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0

P14972-1

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961014822354

NSN

5961-01-482-2354

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P14972-1

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961014822354

NSN

5961-01-482-2354

MFG

GE AVIATION SYSTEMS LLC DBA GE AVIATION

Description

III END ITEM IDENTIFICATION: H-46 GENERATOR
PRECIOUS MATERIAL AND LOCATION: UNKNOWN GOLD

940-30195

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014822387

NSN

5961-01-482-2387

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940-30195

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014822387

NSN

5961-01-482-2387

MFG

POWER PARAGON INC DBA POWER SYSTEMS GROUP DIV POWER SYSTEMS GROUP

Description

CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 940-30195
MANUFACTURERS CODE: 04801
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:

940-30307

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961014823986

NSN

5961-01-482-3986

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940-30307

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961014823986

NSN

5961-01-482-3986

MFG

POWER PARAGON INC DBA POWER SYSTEMS GROUP DIV POWER SYSTEMS GROUP

Description

CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 940-30307
MANUFACTURERS CODE: 04801
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:

JANSG2N7262

TRANSISTOR

NSN, MFG P/N

5961014824631

NSN

5961-01-482-4631

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JANSG2N7262

TRANSISTOR

NSN, MFG P/N

5961014824631

NSN

5961-01-482-4631

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 5.50 AMPERES MAXIMUM SOURCE CURRENT AND 22.00 AMPERES MAXIMUM OFF-STATE CURRENT, PEAK
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANSG2N7262
FEATURES PROVIDED: RADIATION HARDENED
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/601
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL DIAMETER: 0.340 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 25.0 WATTS MAXIMUM AVERAGE ON-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: ELECTROSTATIC DISCHARGE SENSITIVE AND RADIATION HARDENED
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/601 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 0.500 INCHES MINIMUM AND 0.750 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 200.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 2.0 MINIMUM GATE TO SOURCE THRESHOLD VOLTAGE AND 4.0 MAXIMUM GATE TO SOURCE THRESHOLD VOLTAGE

553-0322

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961014825106

NSN

5961-01-482-5106

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553-0322

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961014825106

NSN

5961-01-482-5106

MFG

DIALIGHT CORPORATION

Description

COLOR TONE PRODUCED PER SOURCE: GREEN LENS ALL SEMICONDUCTOR
COMPONENT NAME AND QUANTITY: 2 LIGHT EMITTING DIODE
CURRENT RATING PER CHARACTERISTIC: 12.00 MILLIAMPERES NOMINAL FORWARD CURRENT, AVERAGE ALL SEMICONDUCTOR
LENS TRANSPARENCY: TRANSLUCENT ALL SEMICONDUCTOR
LUMINOUS INTENSITY: 8.0 MILLICANDELA NOMINAL ALL SEMICONDUCTOR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 13.33 MILLIMETERS NOMINAL
OVERALL LENGTH: 8.13 MILLIMETERS NOMINAL
OVERALL WIDTH: 4.32 MILLIMETERS NOMINAL
SPECIAL FEATURES: TEST VOLTAGE 5.0 VOLTS; VIBRATION AND SHOCK RESISTANT; BLACK CASE; TERMINAL PINS ARE 0.509 MM. SQUARE
TERMINAL LENGTH: 3.68 MILLIMETERS NOMINAL
TERMINAL TYPE AND QUANTITY: 4 PIN

591863-4

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961014825752

NSN

5961-01-482-5752

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591863-4

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961014825752

NSN

5961-01-482-5752

MFG

TYCO ELECTRONICS CORPORATION

Description

SPECIAL FEATURES: CONTROLLING AGENCY NOMENCLATURE DIODE MODULE

FH1

TRANSISTOR

NSN, MFG P/N

5961014825755

NSN

5961-01-482-5755

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FH1

TRANSISTOR

NSN, MFG P/N

5961014825755

NSN

5961-01-482-5755

MFG

WATKINS-JOHNSON CO

Description

SPECIAL FEATURES: FREQUENCY RANGE 0-3000 MHZ; FIELD EFFECT TRANSISTOR; SURFACE MOUNT

VA-75-0581-001

TRANSISTOR

NSN, MFG P/N

5961014825755

NSN

5961-01-482-5755

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VA-75-0581-001

TRANSISTOR

NSN, MFG P/N

5961014825755

NSN

5961-01-482-5755

MFG

SELEX GALILEO LTD

Description

SPECIAL FEATURES: FREQUENCY RANGE 0-3000 MHZ; FIELD EFFECT TRANSISTOR; SURFACE MOUNT