Featured Products

My Quote Request

No products added yet

5962-00-117-8730

20 Products

SC2217P

INTEGRATED CIRCUIT

NSN, MFG P/N

5962001178730

NSN

5962-00-117-8730

View More Info

SC2217P

INTEGRATED CIRCUIT

NSN, MFG P/N

5962001178730

NSN

5962-00-117-8730

MFG

FREESCALE SEMICONDUCTOR INC.

17-12064-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001182577

NSN

5962-00-118-2577

View More Info

17-12064-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001182577

NSN

5962-00-118-2577

MFG

TEXTRON SYSTEMS CORPORATION DBA TEXTRON DEFENSE SYSTEMS

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN CONTROL REFERENCE: 17-12064-1
DESIGN FUNCTION AND QUANTITY: 3 GATE, NAND-NOR
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND LOW POWER AND MEDIUM SPEED
III END ITEM IDENTIFICATION: AN/SPN-10 AND AN/SPN-42
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: TRIPLE 3 INPUT
MANUFACTURERS CODE: 04614
MAXIMUM POWER DISSIPATION RATING: 48.8 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 80070-17-12064 DRAWING
THE MANUFACTURERS DATA:
TIME RATING PER CHACTERISTIC: 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

962DM

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001182577

NSN

5962-00-118-2577

View More Info

962DM

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001182577

NSN

5962-00-118-2577

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN CONTROL REFERENCE: 17-12064-1
DESIGN FUNCTION AND QUANTITY: 3 GATE, NAND-NOR
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND LOW POWER AND MEDIUM SPEED
III END ITEM IDENTIFICATION: AN/SPN-10 AND AN/SPN-42
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: TRIPLE 3 INPUT
MANUFACTURERS CODE: 04614
MAXIMUM POWER DISSIPATION RATING: 48.8 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 80070-17-12064 DRAWING
THE MANUFACTURERS DATA:
TIME RATING PER CHACTERISTIC: 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

PD9962-51

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001182577

NSN

5962-00-118-2577

View More Info

PD9962-51

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001182577

NSN

5962-00-118-2577

MFG

FORD AEROSPACE CORP ELECTRONICS DIV

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN CONTROL REFERENCE: 17-12064-1
DESIGN FUNCTION AND QUANTITY: 3 GATE, NAND-NOR
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND LOW POWER AND MEDIUM SPEED
III END ITEM IDENTIFICATION: AN/SPN-10 AND AN/SPN-42
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: TRIPLE 3 INPUT
MANUFACTURERS CODE: 04614
MAXIMUM POWER DISSIPATION RATING: 48.8 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 80070-17-12064 DRAWING
THE MANUFACTURERS DATA:
TIME RATING PER CHACTERISTIC: 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

120-0004-01

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001183867

NSN

5962-00-118-3867

View More Info

120-0004-01

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001183867

NSN

5962-00-118-3867

MFG

HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-OLATHE

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.710 INCHES MINIMUM AND 0.770 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 GATE, NAND
FEATURES PROVIDED: MONOLITHIC AND POSITIVE OUTPUTS AND W/TOTEM POLE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 20.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 22.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT

542-215-007

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001183867

NSN

5962-00-118-3867

View More Info

542-215-007

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001183867

NSN

5962-00-118-3867

MFG

ELETTRONICA SPA

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.710 INCHES MINIMUM AND 0.770 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 GATE, NAND
FEATURES PROVIDED: MONOLITHIC AND POSITIVE OUTPUTS AND W/TOTEM POLE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 20.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 22.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT

Q67000A902Z40

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001183867

NSN

5962-00-118-3867

View More Info

Q67000A902Z40

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001183867

NSN

5962-00-118-3867

MFG

EADS DEUTSCHLAND GMBH DEFENCE ELECTR ONICS ABTEILUNG VELB6

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.710 INCHES MINIMUM AND 0.770 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 GATE, NAND
FEATURES PROVIDED: MONOLITHIC AND POSITIVE OUTPUTS AND W/TOTEM POLE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 20.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 22.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT

Q67000H111Z9

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001183867

NSN

5962-00-118-3867

View More Info

Q67000H111Z9

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001183867

NSN

5962-00-118-3867

MFG

EPCOS AG

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.710 INCHES MINIMUM AND 0.770 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 GATE, NAND
FEATURES PROVIDED: MONOLITHIC AND POSITIVE OUTPUTS AND W/TOTEM POLE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 20.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 22.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT

SN5420N

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001183867

NSN

5962-00-118-3867

View More Info

SN5420N

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001183867

NSN

5962-00-118-3867

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.710 INCHES MINIMUM AND 0.770 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 GATE, NAND
FEATURES PROVIDED: MONOLITHIC AND POSITIVE OUTPUTS AND W/TOTEM POLE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 20.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 22.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT

120-0002-01

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001183868

NSN

5962-00-118-3868

View More Info

120-0002-01

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001183868

NSN

5962-00-118-3868

MFG

HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-OLATHE

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.710 INCHES MINIMUM AND 0.770 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 GATE, NOR
FEATURES PROVIDED: MONOLITHIC AND POSITIVE OUTPUTS AND W/TOTEM POLE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 56.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 22.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT

542-215-002

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001183868

NSN

5962-00-118-3868

View More Info

542-215-002

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001183868

NSN

5962-00-118-3868

MFG

ELETTRONICA SPA

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.710 INCHES MINIMUM AND 0.770 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 GATE, NOR
FEATURES PROVIDED: MONOLITHIC AND POSITIVE OUTPUTS AND W/TOTEM POLE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 56.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 22.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT

DM5402J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001183868

NSN

5962-00-118-3868

View More Info

DM5402J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001183868

NSN

5962-00-118-3868

MFG

ADELCO ELEKTRONIK GMBH

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.710 INCHES MINIMUM AND 0.770 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 GATE, NOR
FEATURES PROVIDED: MONOLITHIC AND POSITIVE OUTPUTS AND W/TOTEM POLE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 56.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 22.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT

DM5402N

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001183868

NSN

5962-00-118-3868

View More Info

DM5402N

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001183868

NSN

5962-00-118-3868

MFG

NATIONAL SEMICONDUCTOR CORPORATION

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.710 INCHES MINIMUM AND 0.770 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 GATE, NOR
FEATURES PROVIDED: MONOLITHIC AND POSITIVE OUTPUTS AND W/TOTEM POLE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 56.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 22.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT

Q67000H410Z9

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001183868

NSN

5962-00-118-3868

View More Info

Q67000H410Z9

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001183868

NSN

5962-00-118-3868

MFG

EPCOS AG

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.710 INCHES MINIMUM AND 0.770 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 GATE, NOR
FEATURES PROVIDED: MONOLITHIC AND POSITIVE OUTPUTS AND W/TOTEM POLE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 56.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 22.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT

SN5402N

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001183868

NSN

5962-00-118-3868

View More Info

SN5402N

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001183868

NSN

5962-00-118-3868

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.710 INCHES MINIMUM AND 0.770 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 GATE, NOR
FEATURES PROVIDED: MONOLITHIC AND POSITIVE OUTPUTS AND W/TOTEM POLE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 56.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 22.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT

DM9093N

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001183869

NSN

5962-00-118-3869

View More Info

DM9093N

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001183869

NSN

5962-00-118-3869

MFG

NATIONAL SEMICONDUCTOR CORPORATION

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 FLIP-FLOP, J-K, CLOCKED
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND W/ENABLE AND ASYNCHRONOUS AND EDGE TRIGGERED AND POSITIVE OUTPUTS AND RESETTABLE AND SYNCHRONOUS AND W/CLEAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 120.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 40.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT

ICE007887

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001183869

NSN

5962-00-118-3869

View More Info

ICE007887

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001183869

NSN

5962-00-118-3869

MFG

TREND NETWORKS SERVICES

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 FLIP-FLOP, J-K, CLOCKED
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND W/ENABLE AND ASYNCHRONOUS AND EDGE TRIGGERED AND POSITIVE OUTPUTS AND RESETTABLE AND SYNCHRONOUS AND W/CLEAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 120.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 40.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT

MC953L

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001183869

NSN

5962-00-118-3869

View More Info

MC953L

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001183869

NSN

5962-00-118-3869

MFG

FREESCALE SEMICONDUCTOR INC.

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 FLIP-FLOP, J-K, CLOCKED
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND W/ENABLE AND ASYNCHRONOUS AND EDGE TRIGGERED AND POSITIVE OUTPUTS AND RESETTABLE AND SYNCHRONOUS AND W/CLEAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 120.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 40.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT

MIC9093-1D

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001183869

NSN

5962-00-118-3869

View More Info

MIC9093-1D

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001183869

NSN

5962-00-118-3869

MFG

ITT SEMICONDUCTORS DIV

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 FLIP-FLOP, J-K, CLOCKED
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND W/ENABLE AND ASYNCHRONOUS AND EDGE TRIGGERED AND POSITIVE OUTPUTS AND RESETTABLE AND SYNCHRONOUS AND W/CLEAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 120.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 40.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT

PD9093-51

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001183869

NSN

5962-00-118-3869

View More Info

PD9093-51

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001183869

NSN

5962-00-118-3869

MFG

PHILCO-FORD CORP MICROELECTRONICS DIV

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 FLIP-FLOP, J-K, CLOCKED
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND W/ENABLE AND ASYNCHRONOUS AND EDGE TRIGGERED AND POSITIVE OUTPUTS AND RESETTABLE AND SYNCHRONOUS AND W/CLEAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 120.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 40.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT