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5962-00-308-9907
20 Products
118799-002
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962003089907
NSN
5962-00-308-9907
MFG
HARRIS CORPORATION DBA GOVERNMENT COMMUNICATIONS SYSTEMS DIVISION DIV GOVERNMENT COMMUNICATIONS SYSTEMS DIVISION
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 FLIP-FLOP, CLOCKED AND 2 FLIP-FLOP, D-TYPE
FEATURES PROVIDED: MONOLITHIC AND POSITIVE OUTPUTS AND EDGE TRIGGERED AND HIGH SPEED AND PRESETTABLE AND SCHOTTKY AND W/CLEAR
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: TERMINALS SILVER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 274.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
Related Searches:
446/4/04189/000
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962003089782
NSN
5962-00-308-9782
MFG
GEFANUC INTELLIGENT PLATFORMS LIMITED
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: MONOLITHIC AND POSITIVE OUTPUTS AND W/TOTEM POLE OUTPUT AND HIGH SPEED AND SCHOTTKY
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: TERMINALS SILVER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 198.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 4.50 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 5.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
Related Searches:
5209-939
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962003089782
NSN
5962-00-308-9782
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: MONOLITHIC AND POSITIVE OUTPUTS AND W/TOTEM POLE OUTPUT AND HIGH SPEED AND SCHOTTKY
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: TERMINALS SILVER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 198.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 4.50 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 5.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
Related Searches:
640-100016-001
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962003089782
NSN
5962-00-308-9782
MFG
MODCOMP INC.
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: MONOLITHIC AND POSITIVE OUTPUTS AND W/TOTEM POLE OUTPUT AND HIGH SPEED AND SCHOTTKY
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: TERMINALS SILVER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 198.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 4.50 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 5.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
Related Searches:
74S00
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962003089782
NSN
5962-00-308-9782
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: MONOLITHIC AND POSITIVE OUTPUTS AND W/TOTEM POLE OUTPUT AND HIGH SPEED AND SCHOTTKY
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: TERMINALS SILVER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 198.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 4.50 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 5.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
Related Searches:
74S00P
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962003089782
NSN
5962-00-308-9782
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: MONOLITHIC AND POSITIVE OUTPUTS AND W/TOTEM POLE OUTPUT AND HIGH SPEED AND SCHOTTKY
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: TERMINALS SILVER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 198.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 4.50 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 5.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
Related Searches:
81500492
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962003089782
NSN
5962-00-308-9782
MFG
ERICSSON INFORMATION SYSTEM A/S
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: MONOLITHIC AND POSITIVE OUTPUTS AND W/TOTEM POLE OUTPUT AND HIGH SPEED AND SCHOTTKY
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: TERMINALS SILVER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 198.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 4.50 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 5.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
Related Searches:
BL2503734
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962003089782
NSN
5962-00-308-9782
MFG
ROHDE & SCHWARZ GMBH & CO. KG
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: MONOLITHIC AND POSITIVE OUTPUTS AND W/TOTEM POLE OUTPUT AND HIGH SPEED AND SCHOTTKY
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: TERMINALS SILVER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 198.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 4.50 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 5.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
Related Searches:
SN74S00N
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962003089782
NSN
5962-00-308-9782
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: MONOLITHIC AND POSITIVE OUTPUTS AND W/TOTEM POLE OUTPUT AND HIGH SPEED AND SCHOTTKY
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: TERMINALS SILVER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 198.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 4.50 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 5.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
Related Searches:
01-49018-92
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962003089834
NSN
5962-00-308-9834
MFG
COMPUTER AUTOMATION INC
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 3 GATE, NAND
FEATURES PROVIDED: MONOLITHIC AND POSITIVE OUTPUTS AND HIGH SPEED AND W/TOTEM POLE OUTPUT AND SCHOTTKY
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: TERMINALS SILVER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: TRIPLE 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 148.5 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 6.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 7.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
Related Searches:
446/4/01511/120
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962003089834
NSN
5962-00-308-9834
MFG
GEFANUC INTELLIGENT PLATFORMS LIMITED
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 3 GATE, NAND
FEATURES PROVIDED: MONOLITHIC AND POSITIVE OUTPUTS AND HIGH SPEED AND W/TOTEM POLE OUTPUT AND SCHOTTKY
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: TERMINALS SILVER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: TRIPLE 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 148.5 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 6.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 7.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
Related Searches:
446/4/04189/010
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962003089834
NSN
5962-00-308-9834
MFG
GEFANUC INTELLIGENT PLATFORMS LIMITED
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 3 GATE, NAND
FEATURES PROVIDED: MONOLITHIC AND POSITIVE OUTPUTS AND HIGH SPEED AND W/TOTEM POLE OUTPUT AND SCHOTTKY
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: TERMINALS SILVER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: TRIPLE 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 148.5 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 6.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 7.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
Related Searches:
587-018
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962003089834
NSN
5962-00-308-9834
MFG
AMPEX DATA SYSTEMS CORP COMPUTER PRODUCTS DIV
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 3 GATE, NAND
FEATURES PROVIDED: MONOLITHIC AND POSITIVE OUTPUTS AND HIGH SPEED AND W/TOTEM POLE OUTPUT AND SCHOTTKY
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: TERMINALS SILVER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: TRIPLE 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 148.5 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 6.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 7.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
Related Searches:
63A133588P10P
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962003089834
NSN
5962-00-308-9834
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN SIMULATION TRAINING & SUPPORT
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 3 GATE, NAND
FEATURES PROVIDED: MONOLITHIC AND POSITIVE OUTPUTS AND HIGH SPEED AND W/TOTEM POLE OUTPUT AND SCHOTTKY
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: TERMINALS SILVER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: TRIPLE 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 148.5 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 6.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 7.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
Related Searches:
BL2666638
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962003089834
NSN
5962-00-308-9834
MFG
ROHDE & SCHWARZ GMBH & CO. KG
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 3 GATE, NAND
FEATURES PROVIDED: MONOLITHIC AND POSITIVE OUTPUTS AND HIGH SPEED AND W/TOTEM POLE OUTPUT AND SCHOTTKY
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: TERMINALS SILVER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: TRIPLE 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 148.5 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 6.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 7.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
Related Searches:
SN74S10N
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962003089834
NSN
5962-00-308-9834
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 3 GATE, NAND
FEATURES PROVIDED: MONOLITHIC AND POSITIVE OUTPUTS AND HIGH SPEED AND W/TOTEM POLE OUTPUT AND SCHOTTKY
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: TERMINALS SILVER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: TRIPLE 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 148.5 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 6.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 7.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
Related Searches:
SN74S10NP3
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962003089834
NSN
5962-00-308-9834
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 3 GATE, NAND
FEATURES PROVIDED: MONOLITHIC AND POSITIVE OUTPUTS AND HIGH SPEED AND W/TOTEM POLE OUTPUT AND SCHOTTKY
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: TERMINALS SILVER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: TRIPLE 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 148.5 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 6.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 7.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
Related Searches:
445/4/98060/191
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962003089839
NSN
5962-00-308-9839
MFG
SIEMENS AIR TRAFFIC MANAGEMENT
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 GATE, NAND BUFFER
FEATURES PROVIDED: MONOLITHIC AND POSITIVE OUTPUTS AND HIGH SPEED AND SCHOTTKY AND W/TOTEM POLE OUTPUT
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: TERMINALS SILVER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 242.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 8.50 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 8.50 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
Related Searches:
SN74S40N
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962003089839
NSN
5962-00-308-9839
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 GATE, NAND BUFFER
FEATURES PROVIDED: MONOLITHIC AND POSITIVE OUTPUTS AND HIGH SPEED AND SCHOTTKY AND W/TOTEM POLE OUTPUT
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: TERMINALS SILVER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 242.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 8.50 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 8.50 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
Related Searches:
446/4/04189/074
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962003089907
NSN
5962-00-308-9907
MFG
GEFANUC INTELLIGENT PLATFORMS LIMITED
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 FLIP-FLOP, CLOCKED AND 2 FLIP-FLOP, D-TYPE
FEATURES PROVIDED: MONOLITHIC AND POSITIVE OUTPUTS AND EDGE TRIGGERED AND HIGH SPEED AND PRESETTABLE AND SCHOTTKY AND W/CLEAR
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: TERMINALS SILVER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 274.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
