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5961-00-574-3779
20 Products
5039-317
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961005743779
NSN
5961-00-574-3779
5039-317
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961005743779
NSN
5961-00-574-3779
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 35.00 AMPERES MAXIMUM ON-STATE CURRENT, PEAK
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.505 INCHES MAXIMUM
OVERALL LENGTH: 0.784 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM OFF-STATE VOLTAGE, RMS TOTAL
Related Searches:
50224-003
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961005742082
NSN
5961-00-574-2082
50224-003
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961005742082
NSN
5961-00-574-2082
MFG
ERBE ELEKTROMEDIZIN GMBH
Description
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 PEAK INVERSE VOLTAGE
OPERATING TEMP RANGE: -50.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.200 INCHES NOMINAL
OVERALL LENGTH: 0.600 INCHES NOMINAL
OVERALL WIDTH: 0.600 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
Related Searches:
67100431-000
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961005742082
NSN
5961-00-574-2082
67100431-000
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961005742082
NSN
5961-00-574-2082
MFG
INTERNATIONAL VIDEO SYSTEMS INC
Description
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 PEAK INVERSE VOLTAGE
OPERATING TEMP RANGE: -50.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.200 INCHES NOMINAL
OVERALL LENGTH: 0.600 INCHES NOMINAL
OVERALL WIDTH: 0.600 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
Related Searches:
804105
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961005742082
NSN
5961-00-574-2082
804105
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961005742082
NSN
5961-00-574-2082
MFG
NORTH ATLANTIC INDUSTRIES INC.
Description
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 PEAK INVERSE VOLTAGE
OPERATING TEMP RANGE: -50.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.200 INCHES NOMINAL
OVERALL LENGTH: 0.600 INCHES NOMINAL
OVERALL WIDTH: 0.600 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
Related Searches:
A615745
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961005742082
NSN
5961-00-574-2082
A615745
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961005742082
NSN
5961-00-574-2082
MFG
NAI TECHNOLOGIES INC
Description
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 PEAK INVERSE VOLTAGE
OPERATING TEMP RANGE: -50.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.200 INCHES NOMINAL
OVERALL LENGTH: 0.600 INCHES NOMINAL
OVERALL WIDTH: 0.600 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
Related Searches:
KBPC602-4
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961005742082
NSN
5961-00-574-2082
KBPC602-4
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961005742082
NSN
5961-00-574-2082
MFG
GENERAL SEMICONDUCTOR INC
Description
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 PEAK INVERSE VOLTAGE
OPERATING TEMP RANGE: -50.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.200 INCHES NOMINAL
OVERALL LENGTH: 0.600 INCHES NOMINAL
OVERALL WIDTH: 0.600 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
Related Searches:
S6339
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961005742082
NSN
5961-00-574-2082
S6339
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961005742082
NSN
5961-00-574-2082
MFG
ST-SEMICON INC
Description
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 PEAK INVERSE VOLTAGE
OPERATING TEMP RANGE: -50.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.200 INCHES NOMINAL
OVERALL LENGTH: 0.600 INCHES NOMINAL
OVERALL WIDTH: 0.600 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
Related Searches:
SDA117C
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961005742082
NSN
5961-00-574-2082
SDA117C
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961005742082
NSN
5961-00-574-2082
MFG
SOLID STATE DEVICES INC.
Description
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 PEAK INVERSE VOLTAGE
OPERATING TEMP RANGE: -50.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.200 INCHES NOMINAL
OVERALL LENGTH: 0.600 INCHES NOMINAL
OVERALL WIDTH: 0.600 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
Related Searches:
V132022
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961005742082
NSN
5961-00-574-2082
V132022
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961005742082
NSN
5961-00-574-2082
MFG
BARCO N.V. BARCOVIEW
Description
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 PEAK INVERSE VOLTAGE
OPERATING TEMP RANGE: -50.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.200 INCHES NOMINAL
OVERALL LENGTH: 0.600 INCHES NOMINAL
OVERALL WIDTH: 0.600 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
Related Searches:
VS247
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961005742082
NSN
5961-00-574-2082
VS247
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961005742082
NSN
5961-00-574-2082
MFG
IV-ELECTRONIC KLAUS VESPERMANN KG
Description
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 PEAK INVERSE VOLTAGE
OPERATING TEMP RANGE: -50.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.200 INCHES NOMINAL
OVERALL LENGTH: 0.600 INCHES NOMINAL
OVERALL WIDTH: 0.600 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
Related Searches:
100394-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005743757
NSN
5961-00-574-3757
MFG
EDO
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
1712473-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005743757
NSN
5961-00-574-3757
MFG
LOCKHEED MARTIN CORP LOCKHEED MARTIN INFORMATION SYSTEMS AUTOMATED SPARES
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
3001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005743757
NSN
5961-00-574-3757
MFG
HEWLETT PACKARD CO
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
535750-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005743757
NSN
5961-00-574-3757
MFG
RAYTHEON COMPANY
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
5800583-926201-111
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005743757
NSN
5961-00-574-3757
5800583-926201-111
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005743757
NSN
5961-00-574-3757
MFG
EADS DEUTSCHLAND GMBH DEFENCE ELECTR ONICS ABTEILUNG VELB6
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
618248-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005743757
NSN
5961-00-574-3757
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
A3105
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005743757
NSN
5961-00-574-3757
MFG
AERONAUTICAL COMMUNICATIONS EQUIPMENT INC
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
HP3001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005743757
NSN
5961-00-574-3757
MFG
THALES COMMUNICATIONS S.A.
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
C32AX50
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961005743779
NSN
5961-00-574-3779
C32AX50
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961005743779
NSN
5961-00-574-3779
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT POWER COMPONENTS OPN
Description
CURRENT RATING PER CHARACTERISTIC: 35.00 AMPERES MAXIMUM ON-STATE CURRENT, PEAK
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.505 INCHES MAXIMUM
OVERALL LENGTH: 0.784 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM OFF-STATE VOLTAGE, RMS TOTAL
Related Searches:
FBP00-009
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961005743779
NSN
5961-00-574-3779
FBP00-009
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961005743779
NSN
5961-00-574-3779
MFG
VEECO INSTRUMENTS INC LAMBDA DIV
Description
CURRENT RATING PER CHARACTERISTIC: 35.00 AMPERES MAXIMUM ON-STATE CURRENT, PEAK
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.505 INCHES MAXIMUM
OVERALL LENGTH: 0.784 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM OFF-STATE VOLTAGE, RMS TOTAL
