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5961-00-327-9584
20 Products
925070-501B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003279584
NSN
5961-00-327-9584
925070-501B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003279584
NSN
5961-00-327-9584
MFG
RAYTHEON COMPANY
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.500 INCHES NOMINAL
OVERALL LENGTH: 4.250 INCHES MINIMUM
OVERALL WIDTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1000.0 WATTS MAXIMUM REVERSE POWER DISSIPATION, INSTANTANEOUS
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 2.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25000.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
SA3730
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003279584
NSN
5961-00-327-9584
MFG
SEMTECH CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.500 INCHES NOMINAL
OVERALL LENGTH: 4.250 INCHES MINIMUM
OVERALL WIDTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1000.0 WATTS MAXIMUM REVERSE POWER DISSIPATION, INSTANTANEOUS
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 2.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25000.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
925072-501B
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961003279585
NSN
5961-00-327-9585
925072-501B
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961003279585
NSN
5961-00-327-9585
MFG
RAYTHEON COMPANY
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
DESIGN CONTROL REFERENCE: 925072-501B
MANUFACTURERS CODE: 82577
MATERIAL: SILICON
OVERALL HEIGHT: 0.250 INCHES NOMINAL
OVERALL LENGTH: 1.250 INCHES NOMINAL
OVERALL WIDTH: 0.450 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 5 TURRET
THE MANUFACTURERS DATA:
Related Searches:
PD9585
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961003279585
NSN
5961-00-327-9585
PD9585
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961003279585
NSN
5961-00-327-9585
MFG
PD & E ELECTRONICS LLC
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
DESIGN CONTROL REFERENCE: 925072-501B
MANUFACTURERS CODE: 82577
MATERIAL: SILICON
OVERALL HEIGHT: 0.250 INCHES NOMINAL
OVERALL LENGTH: 1.250 INCHES NOMINAL
OVERALL WIDTH: 0.450 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 5 TURRET
THE MANUFACTURERS DATA:
Related Searches:
SA3698
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961003279585
NSN
5961-00-327-9585
SA3698
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961003279585
NSN
5961-00-327-9585
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
DESIGN CONTROL REFERENCE: 925072-501B
MANUFACTURERS CODE: 82577
MATERIAL: SILICON
OVERALL HEIGHT: 0.250 INCHES NOMINAL
OVERALL LENGTH: 1.250 INCHES NOMINAL
OVERALL WIDTH: 0.450 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 5 TURRET
THE MANUFACTURERS DATA:
Related Searches:
SEN-B-322-501B
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961003279585
NSN
5961-00-327-9585
SEN-B-322-501B
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961003279585
NSN
5961-00-327-9585
MFG
RSM ELECTRON POWER INC . DBA RSM SENSITRON SEMICONDUCTOR
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
DESIGN CONTROL REFERENCE: 925072-501B
MANUFACTURERS CODE: 82577
MATERIAL: SILICON
OVERALL HEIGHT: 0.250 INCHES NOMINAL
OVERALL LENGTH: 1.250 INCHES NOMINAL
OVERALL WIDTH: 0.450 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 5 TURRET
THE MANUFACTURERS DATA:
Related Searches:
71SH123
TRANSISTOR
NSN, MFG P/N
5961003280117
NSN
5961-00-328-0117
MFG
SOLITRON DEVICES INC.
Description
DESIGN CONTROL REFERENCE: 928469-501B
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 82577
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.344 INCHES NOMINAL
OVERALL LENGTH: 0.375 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.438 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG
THE MANUFACTURERS DATA:
THREAD SERIES DESIGNATOR: UNF
Related Searches:
928469-501B
TRANSISTOR
NSN, MFG P/N
5961003280117
NSN
5961-00-328-0117
MFG
RAYTHEON COMPANY
Description
DESIGN CONTROL REFERENCE: 928469-501B
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 82577
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.344 INCHES NOMINAL
OVERALL LENGTH: 0.375 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.438 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG
THE MANUFACTURERS DATA:
THREAD SERIES DESIGNATOR: UNF
Related Searches:
SP6677
TRANSISTOR
NSN, MFG P/N
5961003280117
NSN
5961-00-328-0117
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
DESIGN CONTROL REFERENCE: 928469-501B
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 82577
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.344 INCHES NOMINAL
OVERALL LENGTH: 0.375 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.438 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG
THE MANUFACTURERS DATA:
THREAD SERIES DESIGNATOR: UNF
Related Searches:
653-600000-002
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961003280263
NSN
5961-00-328-0263
653-600000-002
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961003280263
NSN
5961-00-328-0263
MFG
MODCOMP INC.
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM FORWARD GATE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.450 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE, GATE TERMINAL OPEN-CIRCUITED
Related Searches:
MCR649AP2
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961003280263
NSN
5961-00-328-0263
MCR649AP2
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961003280263
NSN
5961-00-328-0263
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM FORWARD GATE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.450 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE, GATE TERMINAL OPEN-CIRCUITED
Related Searches:
7534231P0001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003280748
NSN
5961-00-328-0748
7534231P0001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003280748
NSN
5961-00-328-0748
MFG
LOCKHEED MARTIN CORP NAVAL ELECTRONICS & SURVEILLANCE SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: EMITTER
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.424 INCHES MAXIMUM
OVERALL LENGTH: 0.800 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
A28AR90
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003280748
NSN
5961-00-328-0748
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT POWER COMPONENTS OPN
Description
CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: EMITTER
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.424 INCHES MAXIMUM
OVERALL LENGTH: 0.800 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
7534295P0001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003280751
NSN
5961-00-328-0751
7534295P0001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003280751
NSN
5961-00-328-0751
MFG
LOCKHEED MARTIN CORP NAVAL ELECTRONICS & SURVEILLANCE SYSTEMS
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: TERMINALS SILVER
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.094 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.125 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
K3160
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003280751
NSN
5961-00-328-0751
MFG
MICRO-METRICS INC. DBA AEROFLEX / METELICS - EAST
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: TERMINALS SILVER
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.094 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.125 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
PG1093
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003280751
NSN
5961-00-328-0751
MFG
TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: TERMINALS SILVER
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.094 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.125 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
2N6155
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961003280827
NSN
5961-00-328-0827
2N6155
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961003280827
NSN
5961-00-328-0827
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.520 INCHES MAXIMUM
OVERALL LENGTH: 0.658 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE6301 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.148 INCHES MAXIMUM
TERMINAL LENGTH: 0.650 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM BREAKOVER VOLTAGE, DC
Related Searches:
DMS 87127B
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961003280827
NSN
5961-00-328-0827
DMS 87127B
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961003280827
NSN
5961-00-328-0827
MFG
DLA LAND AND MARITIME
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.520 INCHES MAXIMUM
OVERALL LENGTH: 0.658 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE6301 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.148 INCHES MAXIMUM
TERMINAL LENGTH: 0.650 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM BREAKOVER VOLTAGE, DC
Related Searches:
MAC10-4
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961003280827
NSN
5961-00-328-0827
MAC10-4
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961003280827
NSN
5961-00-328-0827
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.520 INCHES MAXIMUM
OVERALL LENGTH: 0.658 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE6301 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.148 INCHES MAXIMUM
TERMINAL LENGTH: 0.650 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM BREAKOVER VOLTAGE, DC
Related Searches:
7531466P0001
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961003281404
NSN
5961-00-328-1404
7531466P0001
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961003281404
NSN
5961-00-328-1404
MFG
LOCKHEED MARTIN CORP NAVAL ELECTRONICS & SURVEILLANCE SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.500 INCHES
OVERALL LENGTH: 1.030 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.062 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
