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5962-01-059-9990
20 Products
537864-2
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010599990
NSN
5962-01-059-9990
MFG
RAYTHEON COMPANY
Description
(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.400 INCHES NOMINAL
BODY LENGTH: 0.760 INCHES NOMINAL
BODY WIDTH: 0.270 INCHES NOMINAL
FEATURES PROVIDED: BIPOLAR AND HIGH SPEED AND PROGRAMMABLE AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-DIODE-RESISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
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BL0093502
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010597389
NSN
5962-01-059-7389
MFG
ROHDE & SCHWARZ GMBH & CO. KG
Description
FEATURES PROVIDED: HERMETICALLY SEALED AND EXPANDABLE
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
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SN4931N
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010597389
NSN
5962-01-059-7389
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
FEATURES PROVIDED: HERMETICALLY SEALED AND EXPANDABLE
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
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48P227278-01
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010597852
NSN
5962-01-059-7852
MFG
HERLEY CHICAGO DBA STEWART WARNER ELECTRONICS
Description
BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 AMPLIFIER, OPERATIONAL, DIFFERENTIAL
FEATURES PROVIDED: MONOLITHIC AND POSITIVE OUTPUTS
III OVERALL HEIGHT: 0.665 INCHES MINIMUM AND 0.747 INCHES MAXIMUM
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 600.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
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642AS2815-1
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010597852
NSN
5962-01-059-7852
MFG
NAVAL AIR SYSTEMS COMMAND
Description
BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 AMPLIFIER, OPERATIONAL, DIFFERENTIAL
FEATURES PROVIDED: MONOLITHIC AND POSITIVE OUTPUTS
III OVERALL HEIGHT: 0.665 INCHES MINIMUM AND 0.747 INCHES MAXIMUM
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 600.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
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755002A7726-1
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010597852
NSN
5962-01-059-7852
MFG
QUARTERMASTER GENERAL
Description
BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 AMPLIFIER, OPERATIONAL, DIFFERENTIAL
FEATURES PROVIDED: MONOLITHIC AND POSITIVE OUTPUTS
III OVERALL HEIGHT: 0.665 INCHES MINIMUM AND 0.747 INCHES MAXIMUM
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 600.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
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772103-1
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010597852
NSN
5962-01-059-7852
MFG
RAYTHEON COMPANY
Description
BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 AMPLIFIER, OPERATIONAL, DIFFERENTIAL
FEATURES PROVIDED: MONOLITHIC AND POSITIVE OUTPUTS
III OVERALL HEIGHT: 0.665 INCHES MINIMUM AND 0.747 INCHES MAXIMUM
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 600.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
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CA3049T/3
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010597852
NSN
5962-01-059-7852
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 AMPLIFIER, OPERATIONAL, DIFFERENTIAL
FEATURES PROVIDED: MONOLITHIC AND POSITIVE OUTPUTS
III OVERALL HEIGHT: 0.665 INCHES MINIMUM AND 0.747 INCHES MAXIMUM
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 600.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
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CA3049T3
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010597852
NSN
5962-01-059-7852
MFG
INTERSIL CORPORATION
Description
BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 AMPLIFIER, OPERATIONAL, DIFFERENTIAL
FEATURES PROVIDED: MONOLITHIC AND POSITIVE OUTPUTS
III OVERALL HEIGHT: 0.665 INCHES MINIMUM AND 0.747 INCHES MAXIMUM
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 600.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
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CA3049T3A
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010597852
NSN
5962-01-059-7852
MFG
ADELCO ELEKTRONIK GMBH
Description
BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 AMPLIFIER, OPERATIONAL, DIFFERENTIAL
FEATURES PROVIDED: MONOLITHIC AND POSITIVE OUTPUTS
III OVERALL HEIGHT: 0.665 INCHES MINIMUM AND 0.747 INCHES MAXIMUM
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 600.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
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G731430-1
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010597852
NSN
5962-01-059-7852
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 AMPLIFIER, OPERATIONAL, DIFFERENTIAL
FEATURES PROVIDED: MONOLITHIC AND POSITIVE OUTPUTS
III OVERALL HEIGHT: 0.665 INCHES MINIMUM AND 0.747 INCHES MAXIMUM
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 600.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
Related Searches:
Q67000A668Z
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010597852
NSN
5962-01-059-7852
MFG
EADS DEUTSCHLAND GMBH DEFENCE ELECTR ONICS ABTEILUNG VELB6
Description
BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 AMPLIFIER, OPERATIONAL, DIFFERENTIAL
FEATURES PROVIDED: MONOLITHIC AND POSITIVE OUTPUTS
III OVERALL HEIGHT: 0.665 INCHES MINIMUM AND 0.747 INCHES MAXIMUM
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 600.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
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582R656H01
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010597853
NSN
5962-01-059-7853
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS
Description
(NON-CORE DATA) BIT QUANTITY: 4
BODY HEIGHT: 0.250 INCHES NOMINAL
BODY LENGTH: 0.870 INCHES MAXIMUM
BODY WIDTH: 0.300 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 1 SHIFT REGISTER, PARALLEL ACCESS
FEATURES PROVIDED: HERMETICALLY SEALED AND LOW POWER AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: SILICON
INPUT CIRCUIT PATTERN: 2 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
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SN54LS195
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010597853
NSN
5962-01-059-7853
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
(NON-CORE DATA) BIT QUANTITY: 4
BODY HEIGHT: 0.250 INCHES NOMINAL
BODY LENGTH: 0.870 INCHES MAXIMUM
BODY WIDTH: 0.300 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 1 SHIFT REGISTER, PARALLEL ACCESS
FEATURES PROVIDED: HERMETICALLY SEALED AND LOW POWER AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: SILICON
INPUT CIRCUIT PATTERN: 2 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
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SN57134J
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010597853
NSN
5962-01-059-7853
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
(NON-CORE DATA) BIT QUANTITY: 4
BODY HEIGHT: 0.250 INCHES NOMINAL
BODY LENGTH: 0.870 INCHES MAXIMUM
BODY WIDTH: 0.300 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 1 SHIFT REGISTER, PARALLEL ACCESS
FEATURES PROVIDED: HERMETICALLY SEALED AND LOW POWER AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: SILICON
INPUT CIRCUIT PATTERN: 2 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
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932578-1B
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010599988
NSN
5962-01-059-9988
MFG
RAYTHEON COMPANY
Description
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.305 INCHES MINIMUM AND 0.335 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-5 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 REGULATOR, TRACKING
FEATURES PROVIDED: HERMETICALLY SEALED
INCLOSURE CONFIGURATION: CAN
MAXIMUM POWER DISSIPATION RATING: 2.0 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
SPECIAL FEATURES: SILICON SEMICONDUCTOR
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
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MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010599988
NSN
5962-01-059-9988
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.305 INCHES MINIMUM AND 0.335 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-5 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 REGULATOR, TRACKING
FEATURES PROVIDED: HERMETICALLY SEALED
INCLOSURE CONFIGURATION: CAN
MAXIMUM POWER DISSIPATION RATING: 2.0 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
SPECIAL FEATURES: SILICON SEMICONDUCTOR
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
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MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010599989
NSN
5962-01-059-9989
MFG
INTERSTATE ELECTRONICS CORPORATION
Description
BODY LENGTH: 0.165 INCHES MINIMUM AND 0.195 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.305 INCHES MINIMUM AND 0.335 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-5 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 ARRAY, TRANSISTOR
FEATURES PROVIDED: DARLINGTON-CONNECTED AND HIGH VOLTAGE AND MONOLITHIC
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: SILICON
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
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CA3118A-01
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010599989
NSN
5962-01-059-9989
MFG
INTERSIL CORPORATION
Description
BODY LENGTH: 0.165 INCHES MINIMUM AND 0.195 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.305 INCHES MINIMUM AND 0.335 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-5 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 ARRAY, TRANSISTOR
FEATURES PROVIDED: DARLINGTON-CONNECTED AND HIGH VOLTAGE AND MONOLITHIC
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: SILICON
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
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ES4913-02
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010599989
NSN
5962-01-059-9989
MFG
DRS SUSTAINMENT SYSTEMS INC. DIV DRS SUSTAINMENT SYSTEMS INC. USE CAGE CODE 98255 FOR CATALOGING.
Description
BODY LENGTH: 0.165 INCHES MINIMUM AND 0.195 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.305 INCHES MINIMUM AND 0.335 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-5 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 ARRAY, TRANSISTOR
FEATURES PROVIDED: DARLINGTON-CONNECTED AND HIGH VOLTAGE AND MONOLITHIC
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: SILICON
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
