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5961-01-031-4278
20 Products
2N5770
TRANSISTOR
NSN, MFG P/N
5961010314278
NSN
5961-01-031-4278
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.175 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
OVERALL WIDTH: 0.125 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 15.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 4.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
7550
TRANSISTOR
NSN, MFG P/N
5961010314278
NSN
5961-01-031-4278
MFG
HARRIS CORPORATION DIV MICROWAVE COMMUNICATION DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.175 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
OVERALL WIDTH: 0.125 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 15.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 4.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
D44H11A
TRANSISTOR
NSN, MFG P/N
5961010314279
NSN
5961-01-031-4279
MFG
GENERAL ELECTRIC CO POWER ELECTRONICS SYSTEMS DEPT
Description
INTERNAL CONFIGURATION: JUNCTION CONTACT
OVERALL LENGTH: 0.585 INCHES NOMINAL
OVERALL WIDTH: 0.390 INCHES MINIMUM AND 0.420 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
5RC40
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010314281
NSN
5961-01-031-4281
MFG
INTERNATIONAL RECTIFIER CORPORATION
Description
DESIGN CONTROL REFERENCE: 5RC40
INTERNAL CONFIGURATION: FIELD EFFECT
MANUFACTURERS CODE: 81483
OVERALL LENGTH: 0.677 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.477 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
THE MANUFACTURERS DATA:
Related Searches:
35445-30
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010314533
NSN
5961-01-031-4533
MFG
SIGNAL TECHNOLOGY CORPORATION DBA STC MICROWAVE SYSTEMS DIV SIGNAL TECHNOLOGY CORPORATION USE CAGE CODE 33025 FOR CATALOGING.
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
OVERALL HEIGHT: 0.215 INCHES NOMINAL
OVERALL WIDTH: 0.080 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.025 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
922-6104-030
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010314533
NSN
5961-01-031-4533
922-6104-030
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010314533
NSN
5961-01-031-4533
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
OVERALL HEIGHT: 0.215 INCHES NOMINAL
OVERALL WIDTH: 0.080 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.025 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
GC10048
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010314533
NSN
5961-01-031-4533
MFG
MICROSEMI CORP-MASSACHUSETTS DBA MICROSEMI-LOWELL DIV MICROSEMI - LOWELL
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
OVERALL HEIGHT: 0.215 INCHES NOMINAL
OVERALL WIDTH: 0.080 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.025 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
381116001
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961010314731
NSN
5961-01-031-4731
381116001
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961010314731
NSN
5961-01-031-4731
MFG
MOMENTUM TECHNOLOGIES INC
Description
III END ITEM IDENTIFICATION: ANFSQ111
Related Searches:
128232
TRANSISTOR
NSN, MFG P/N
5961010314773
NSN
5961-01-031-4773
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MAXIMUM EMITTER CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -6.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC
Related Searches:
128232-0000
TRANSISTOR
NSN, MFG P/N
5961010314773
NSN
5961-01-031-4773
MFG
SYPRIS ELECTRONICS LLC
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MAXIMUM EMITTER CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -6.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC
Related Searches:
2N417
TRANSISTOR
NSN, MFG P/N
5961010314773
NSN
5961-01-031-4773
MFG
ELECTRONIC TRANSISTORS CORP
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MAXIMUM EMITTER CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -6.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC
Related Searches:
HS5813
TRANSISTOR
NSN, MFG P/N
5961010314774
NSN
5961-01-031-4774
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
CURRENT RATING PER CHARACTERISTIC: 750.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: ANFSQ111
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 135.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.127 INCHES MAXIMUM
OVERALL LENGTH: 0.405 INCHES MAXIMUM
OVERALL WIDTH: 0.263 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: HEAT SINK INCLUDED; JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 25.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 35.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH BASE SHORT-CIRCUITED TO EMITTER AND 5.0 MAXIMUM BREAKDOWN
~1: VOLT
Related Searches:
238Z013U01
TRANSISTOR
NSN, MFG P/N
5961010315008
NSN
5961-01-031-5008
MFG
DELTA DATA SYSTEMS CORP
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.750 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 1 UNINSULATED WIRE LEAD AND 2 PIN
Related Searches:
101KL60S20
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010315009
NSN
5961-01-031-5009
101KL60S20
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010315009
NSN
5961-01-031-5009
MFG
INTERNATIONAL RECTIFIER CORPORATION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
OVERALL WIDTH ACROSS FLATS: 1.045 INCHES MINIMUM AND 1.060 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 UNINSULATED WIRE LEAD W/TERMINAL LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 720.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE AND 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE AND 420.0 MAXIMUM REVERSE VOLTAGE, TOTAL RMS
Related Searches:
110253-135
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010315011
NSN
5961-01-031-5011
110253-135
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010315011
NSN
5961-01-031-5011
MFG
HARRIS CORPORATION DBA GOVERNMENT COMMUNICATIONS SYSTEMS DIVISION DIV GOVERNMENT COMMUNICATIONS SYSTEMS DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 530.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N3339B
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: AN/URC-85 FSCM 13499
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/358
OVERALL DIAMETER: 0.667 INCHES MAXIMUM
OVERALL LENGTH: 0.450 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/358 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
TEST DATA DOCUMENT:
Related Searches:
1N3339B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010315011
NSN
5961-01-031-5011
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 530.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N3339B
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: AN/URC-85 FSCM 13499
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/358
OVERALL DIAMETER: 0.667 INCHES MAXIMUM
OVERALL LENGTH: 0.450 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/358 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
TEST DATA DOCUMENT:
Related Searches:
353-9020-340
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010315011
NSN
5961-01-031-5011
353-9020-340
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010315011
NSN
5961-01-031-5011
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 530.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N3339B
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: AN/URC-85 FSCM 13499
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/358
OVERALL DIAMETER: 0.667 INCHES MAXIMUM
OVERALL LENGTH: 0.450 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/358 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
TEST DATA DOCUMENT:
Related Searches:
JAN1N3339B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010315011
NSN
5961-01-031-5011
JAN1N3339B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010315011
NSN
5961-01-031-5011
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 530.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N3339B
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: AN/URC-85 FSCM 13499
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/358
OVERALL DIAMETER: 0.667 INCHES MAXIMUM
OVERALL LENGTH: 0.450 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/358 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
TEST DATA DOCUMENT:
Related Searches:
SM-A-936109-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010315011
NSN
5961-01-031-5011
SM-A-936109-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010315011
NSN
5961-01-031-5011
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
CURRENT RATING PER CHARACTERISTIC: 530.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N3339B
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: AN/URC-85 FSCM 13499
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/358
OVERALL DIAMETER: 0.667 INCHES MAXIMUM
OVERALL LENGTH: 0.450 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/358 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
TEST DATA DOCUMENT:
Related Searches:
019-005223
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010315853
NSN
5961-01-031-5853
019-005223
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010315853
NSN
5961-01-031-5853
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV MULTIPLE
Description
(NON-CORE DATA) UNPACKAGED UNIT WEIGHT: 0.020 OUNCES
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: LEADS SILVER
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.700 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 250.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
