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5961-01-025-9402

20 Products

1N4561

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010259402

NSN

5961-01-025-9402

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1N4561

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010259402

NSN

5961-01-025-9402

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 2.20 AMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.410 INCHES MAXIMUM
OVERALL LENGTH: 1.499 INCHES NOMINAL
OVERALL WIDTH: 1.010 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE4892 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 0.370 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.6 MAXIMUM NOMINAL REGULATOR VOLTAGE

2435418-5

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010258819

NSN

5961-01-025-8819

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2435418-5

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010258819

NSN

5961-01-025-8819

MFG

HONEYWELL INTL INC DEFENSE AVIONICS SYSTEMS FORMER BENDIX NAVIGATION AND CONTROL SYSTEMS

Description

OVERALL DIAMETER: 0.125 INCHES NOMINAL
OVERALL LENGTH: 2.800 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

C4467-5

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010258819

NSN

5961-01-025-8819

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C4467-5

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010258819

NSN

5961-01-025-8819

MFG

C O D I CORP DBA CODI SEMICONDUCTOR INC

Description

OVERALL DIAMETER: 0.125 INCHES NOMINAL
OVERALL LENGTH: 2.800 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

DZ 1053

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010258819

NSN

5961-01-025-8819

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DZ 1053

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010258819

NSN

5961-01-025-8819

MFG

COMPENSATED DEVICES INC

Description

OVERALL DIAMETER: 0.125 INCHES NOMINAL
OVERALL LENGTH: 2.800 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

196733-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010258820

NSN

5961-01-025-8820

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196733-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010258820

NSN

5961-01-025-8820

MFG

HONEYWELL INTL INC DEFENSE AVIONICS SYSTEMS

Description

DESIGN CONTROL REFERENCE: 196733-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 55972
OVERALL DIAMETER: 0.265 INCHES MAXIMUM
OVERALL LENGTH: 0.560 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

336.4673

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961010259327

NSN

5961-01-025-9327

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336.4673

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961010259327

NSN

5961-01-025-9327

MFG

ROHDE & SCHWARZ INC

Description

CAPACITANCE RATING IN PICOFARADS: 4.0 MAXIMUM ALL TRANSISTOR
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 0.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-116
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.170 INCHES NOMINAL
OVERALL LENGTH: 0.725 INCHES NOMINAL
OVERALL WIDTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.5 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 14 UNINSULATED WIRE LEAD
TRANSFER RATIO: 40.0 NOMINAL STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER ALL TRANSISTOR
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN ALL TRANSISTOR

50213300

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961010259327

NSN

5961-01-025-9327

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50213300

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961010259327

NSN

5961-01-025-9327

MFG

SYNTEGRA / USA/ INC COMPUTER PARTS AND SUPPLIES ARH205

Description

CAPACITANCE RATING IN PICOFARADS: 4.0 MAXIMUM ALL TRANSISTOR
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 0.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-116
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.170 INCHES NOMINAL
OVERALL LENGTH: 0.725 INCHES NOMINAL
OVERALL WIDTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.5 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 14 UNINSULATED WIRE LEAD
TRANSFER RATIO: 40.0 NOMINAL STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER ALL TRANSISTOR
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN ALL TRANSISTOR

MPQ2369

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961010259327

NSN

5961-01-025-9327

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MPQ2369

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961010259327

NSN

5961-01-025-9327

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CAPACITANCE RATING IN PICOFARADS: 4.0 MAXIMUM ALL TRANSISTOR
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 0.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-116
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.170 INCHES NOMINAL
OVERALL LENGTH: 0.725 INCHES NOMINAL
OVERALL WIDTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.5 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 14 UNINSULATED WIRE LEAD
TRANSFER RATIO: 40.0 NOMINAL STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER ALL TRANSISTOR
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN ALL TRANSISTOR

1858-0018

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961010259328

NSN

5961-01-025-9328

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1858-0018

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961010259328

NSN

5961-01-025-9328

MFG

AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES

Description

COMPONENT NAME AND QUANTITY: 4 SEMICONDUCTOR DEVICE DIODE
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: EMORY S. LAND CLASS, TARAWA CLASS LHA, AUSTIN SHIP CLASS LPD-4 AMPHIBIOUS TRANSPORT DOCKS, STURGEON CLASS SSN (637), FORRESTAL CLASS CV, SPRUANCE CLASS DD (963), CIMMARON CLASS AO, OLIVER PERRY CLASS FFG, LOS ANGELES CLASS SSN (688), TICONDEROGA CLASS CG
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -65.0 DEG CELSIUS CASE AND 175.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 14
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.280 INCHES MAXIMUM
OVERALL LENGTH: 0.785 INCHES MAXIMUM
OVERALL WIDTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1900.0 MILLIWATTS MAXIMUM NONREACTIVE POWER INPUT, INSTANTANEOUS TOTAL, TO ALL TERMINALS ALL SEMICONDUCTOR
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL LENGTH: 0.120 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 14 UNINSULATED

M19500/469-01

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961010259328

NSN

5961-01-025-9328

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M19500/469-01

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961010259328

NSN

5961-01-025-9328

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

COMPONENT NAME AND QUANTITY: 4 SEMICONDUCTOR DEVICE DIODE
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: EMORY S. LAND CLASS, TARAWA CLASS LHA, AUSTIN SHIP CLASS LPD-4 AMPHIBIOUS TRANSPORT DOCKS, STURGEON CLASS SSN (637), FORRESTAL CLASS CV, SPRUANCE CLASS DD (963), CIMMARON CLASS AO, OLIVER PERRY CLASS FFG, LOS ANGELES CLASS SSN (688), TICONDEROGA CLASS CG
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -65.0 DEG CELSIUS CASE AND 175.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 14
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.280 INCHES MAXIMUM
OVERALL LENGTH: 0.785 INCHES MAXIMUM
OVERALL WIDTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1900.0 MILLIWATTS MAXIMUM NONREACTIVE POWER INPUT, INSTANTANEOUS TOTAL, TO ALL TERMINALS ALL SEMICONDUCTOR
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL LENGTH: 0.120 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 14 UNINSULATED

361483

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010259329

NSN

5961-01-025-9329

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361483

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010259329

NSN

5961-01-025-9329

MFG

AUTOMATIC SWITCH COMPANY

Description

(NON-CORE DATA) TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 WORKING PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M19500/469-01
MANUFACTURERS CODE: 81349
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/469
OPERATING TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.570 INCHES MAXIMUM
OVERALL LENGTH: 0.735 INCHES MINIMUM AND 0.750 INCHES MAXIMUM
OVERALL WIDTH: 0.735 INCHES MINIMUM AND 0.750 INCHES MAXIMUM
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/469 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 4 TURRET

JAN469-1

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010259329

NSN

5961-01-025-9329

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JAN469-1

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010259329

NSN

5961-01-025-9329

MFG

MICRO USPD INC

Description

(NON-CORE DATA) TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 WORKING PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M19500/469-01
MANUFACTURERS CODE: 81349
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/469
OPERATING TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.570 INCHES MAXIMUM
OVERALL LENGTH: 0.735 INCHES MINIMUM AND 0.750 INCHES MAXIMUM
OVERALL WIDTH: 0.735 INCHES MINIMUM AND 0.750 INCHES MAXIMUM
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/469 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 4 TURRET

JANM19500/469-01

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010259329

NSN

5961-01-025-9329

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JANM19500/469-01

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010259329

NSN

5961-01-025-9329

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

(NON-CORE DATA) TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 WORKING PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M19500/469-01
MANUFACTURERS CODE: 81349
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/469
OPERATING TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.570 INCHES MAXIMUM
OVERALL LENGTH: 0.735 INCHES MINIMUM AND 0.750 INCHES MAXIMUM
OVERALL WIDTH: 0.735 INCHES MINIMUM AND 0.750 INCHES MAXIMUM
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/469 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 4 TURRET

L531-004-649

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010259329

NSN

5961-01-025-9329

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L531-004-649

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010259329

NSN

5961-01-025-9329

MFG

LOCKHEED MARTIN LIBRASCOPE CORP

Description

(NON-CORE DATA) TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 WORKING PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M19500/469-01
MANUFACTURERS CODE: 81349
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/469
OPERATING TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.570 INCHES MAXIMUM
OVERALL LENGTH: 0.735 INCHES MINIMUM AND 0.750 INCHES MAXIMUM
OVERALL WIDTH: 0.735 INCHES MINIMUM AND 0.750 INCHES MAXIMUM
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/469 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 4 TURRET

151-0288-00

TRANSISTOR

NSN, MFG P/N

5961010259393

NSN

5961-01-025-9393

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151-0288-00

TRANSISTOR

NSN, MFG P/N

5961010259393

NSN

5961-01-025-9393

MFG

TEKTRONIX INC. DBA TEKTRONIX

Description

CURRENT RATING PER CHARACTERISTIC: 150.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 3.5 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 80009-151-0288-00 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 25.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 2.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC

A2662

TRANSISTOR

NSN, MFG P/N

5961010259393

NSN

5961-01-025-9393

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A2662

TRANSISTOR

NSN, MFG P/N

5961010259393

NSN

5961-01-025-9393

MFG

AMPEREX ELECTRONIC CORP

Description

CURRENT RATING PER CHARACTERISTIC: 150.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 3.5 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 80009-151-0288-00 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 25.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 2.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC

JAN2N1484

TRANSISTOR

NSN, MFG P/N

5961010259396

NSN

5961-01-025-9396

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JAN2N1484

TRANSISTOR

NSN, MFG P/N

5961010259396

NSN

5961-01-025-9396

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N1484
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/180
OVERALL DIAMETER: 0.550 INCHES MINIMUM AND 0.650 INCHES MAXIMUM
OVERALL LENGTH: 0.270 INCHES MINIMUM AND 0.330 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 25.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/180 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.281 INCHES NOMINAL
TERMINAL LENGTH: 0.360 INCHES MINIMUM AN

MJE220

TRANSISTOR

NSN, MFG P/N

5961010259397

NSN

5961-01-025-9397

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MJE220

TRANSISTOR

NSN, MFG P/N

5961010259397

NSN

5961-01-025-9397

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: STI-1304
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 50891
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 165.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.350 INCHES MAXIMUM
OVERALL LENGTH: 0.435 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 PIN
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN

STI-1304

TRANSISTOR

NSN, MFG P/N

5961010259397

NSN

5961-01-025-9397

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STI-1304

TRANSISTOR

NSN, MFG P/N

5961010259397

NSN

5961-01-025-9397

MFG

SEMICONDUCTOR TECHNOLOGY INC DBA S T I

Description

CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: STI-1304
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 50891
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 165.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.350 INCHES MAXIMUM
OVERALL LENGTH: 0.435 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 PIN
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN

PD1948A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010259399

NSN

5961-01-025-9399

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PD1948A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010259399

NSN

5961-01-025-9399

MFG

POWER DESIGNS INC

Description

OVERALL DIAMETER: 0.375 INCHES NOMINAL
OVERALL LENGTH: 0.812 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD