My Quote Request
No products added yet
5962-01-310-8698
20 Products
3221300-5
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013108698
NSN
5962-01-310-8698
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.285 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-5 MIL-M-38510
FEATURES PROVIDED: MONOLITHIC AND W/OPEN COLLECTOR AND BIPOLAR AND PROGRAMMABLE
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 332.8 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.
Related Searches:
82S23/BFA
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013108694
NSN
5962-01-310-8694
MFG
PHILIPS SEMICONDUCTORS INC
Description
(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.285 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-5 MIL-M-38510
FEATURES PROVIDED: MONOLITHIC AND W/OPEN COLLECTOR AND BIPOLAR AND PROGRAMMABLE
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 332.8 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.
Related Searches:
ROM/PROM FAMILY 022
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013108694
NSN
5962-01-310-8694
ROM/PROM FAMILY 022
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013108694
NSN
5962-01-310-8694
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.285 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-5 MIL-M-38510
FEATURES PROVIDED: MONOLITHIC AND W/OPEN COLLECTOR AND BIPOLAR AND PROGRAMMABLE
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 332.8 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.
Related Searches:
3221300-25
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013108695
NSN
5962-01-310-8695
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.285 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-5 MIL-M-38510
FEATURES PROVIDED: MONOLITHIC AND W/OPEN COLLECTOR AND BIPOLAR AND PROGRAMMABLE
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 332.8 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.
Related Searches:
5330-1F883C
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013108695
NSN
5962-01-310-8695
MFG
MMI/AMD
Description
(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.285 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-5 MIL-M-38510
FEATURES PROVIDED: MONOLITHIC AND W/OPEN COLLECTOR AND BIPOLAR AND PROGRAMMABLE
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 332.8 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.
Related Searches:
717393-26
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013108695
NSN
5962-01-310-8695
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.285 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-5 MIL-M-38510
FEATURES PROVIDED: MONOLITHIC AND W/OPEN COLLECTOR AND BIPOLAR AND PROGRAMMABLE
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 332.8 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.
Related Searches:
82S23/BFA
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013108695
NSN
5962-01-310-8695
MFG
PHILIPS SEMICONDUCTORS INC
Description
(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.285 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-5 MIL-M-38510
FEATURES PROVIDED: MONOLITHIC AND W/OPEN COLLECTOR AND BIPOLAR AND PROGRAMMABLE
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 332.8 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.
Related Searches:
ROM/PROM FAMILY 022
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013108695
NSN
5962-01-310-8695
ROM/PROM FAMILY 022
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013108695
NSN
5962-01-310-8695
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.285 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-5 MIL-M-38510
FEATURES PROVIDED: MONOLITHIC AND W/OPEN COLLECTOR AND BIPOLAR AND PROGRAMMABLE
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 332.8 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.
Related Searches:
3221300-26
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013108696
NSN
5962-01-310-8696
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.285 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-5 MIL-M-38510
FEATURES PROVIDED: MONOLITHIC AND W/OPEN COLLECTOR AND BIPOLAR AND PROGRAMMABLE
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 332.8 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.
Related Searches:
5330-1F883C
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013108696
NSN
5962-01-310-8696
MFG
MMI/AMD
Description
(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.285 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-5 MIL-M-38510
FEATURES PROVIDED: MONOLITHIC AND W/OPEN COLLECTOR AND BIPOLAR AND PROGRAMMABLE
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 332.8 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.
Related Searches:
717393-27
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013108696
NSN
5962-01-310-8696
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.285 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-5 MIL-M-38510
FEATURES PROVIDED: MONOLITHIC AND W/OPEN COLLECTOR AND BIPOLAR AND PROGRAMMABLE
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 332.8 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.
Related Searches:
82S23/BFA
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013108696
NSN
5962-01-310-8696
MFG
PHILIPS SEMICONDUCTORS INC
Description
(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.285 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-5 MIL-M-38510
FEATURES PROVIDED: MONOLITHIC AND W/OPEN COLLECTOR AND BIPOLAR AND PROGRAMMABLE
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 332.8 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.
Related Searches:
ROM/PROM FAMILY 022
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013108696
NSN
5962-01-310-8696
ROM/PROM FAMILY 022
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013108696
NSN
5962-01-310-8696
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.285 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-5 MIL-M-38510
FEATURES PROVIDED: MONOLITHIC AND W/OPEN COLLECTOR AND BIPOLAR AND PROGRAMMABLE
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 332.8 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.
Related Searches:
3221300-4
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013108697
NSN
5962-01-310-8697
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.285 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-5 MIL-M-38510
FEATURES PROVIDED: MONOLITHIC AND W/OPEN COLLECTOR AND BIPOLAR AND PROGRAMMABLE
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 332.8 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.
Related Searches:
5330-1F883C
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013108697
NSN
5962-01-310-8697
MFG
MMI/AMD
Description
(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.285 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-5 MIL-M-38510
FEATURES PROVIDED: MONOLITHIC AND W/OPEN COLLECTOR AND BIPOLAR AND PROGRAMMABLE
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 332.8 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.
Related Searches:
717393-5
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013108697
NSN
5962-01-310-8697
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.285 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-5 MIL-M-38510
FEATURES PROVIDED: MONOLITHIC AND W/OPEN COLLECTOR AND BIPOLAR AND PROGRAMMABLE
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 332.8 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.
Related Searches:
82S23/BFA
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013108697
NSN
5962-01-310-8697
MFG
PHILIPS SEMICONDUCTORS INC
Description
(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.285 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-5 MIL-M-38510
FEATURES PROVIDED: MONOLITHIC AND W/OPEN COLLECTOR AND BIPOLAR AND PROGRAMMABLE
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 332.8 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.
Related Searches:
ROM/PROM FAMILY 022
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013108697
NSN
5962-01-310-8697
ROM/PROM FAMILY 022
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013108697
NSN
5962-01-310-8697
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.285 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-5 MIL-M-38510
FEATURES PROVIDED: MONOLITHIC AND W/OPEN COLLECTOR AND BIPOLAR AND PROGRAMMABLE
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 332.8 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.
Related Searches:
5330-1F883C
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013108698
NSN
5962-01-310-8698
MFG
MMI/AMD
Description
(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.285 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-5 MIL-M-38510
FEATURES PROVIDED: MONOLITHIC AND W/OPEN COLLECTOR AND BIPOLAR AND PROGRAMMABLE
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 332.8 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.
Related Searches:
717393-6
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013108698
NSN
5962-01-310-8698
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.285 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-5 MIL-M-38510
FEATURES PROVIDED: MONOLITHIC AND W/OPEN COLLECTOR AND BIPOLAR AND PROGRAMMABLE
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 332.8 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.
