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5962-01-358-5655

20 Products

21049367-101

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013585655

NSN

5962-01-358-5655

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21049367-101

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013585655

NSN

5962-01-358-5655

MFG

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I

Description

BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 1.280 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-9 MIL-M-38510
FEATURES PROVIDED: BURN IN AND BIPOLAR AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 22 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.2 WATTS
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

5962-8605301LA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013585655

NSN

5962-01-358-5655

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5962-8605301LA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013585655

NSN

5962-01-358-5655

MFG

DLA LAND AND MARITIME OPNS SUPPORT GROUP DOCUMENT CONTROL UNIT

Description

BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 1.280 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-9 MIL-M-38510
FEATURES PROVIDED: BURN IN AND BIPOLAR AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 22 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.2 WATTS
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013585655

NSN

5962-01-358-5655

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ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013585655

NSN

5962-01-358-5655

MFG

DLA LAND AND MARITIME

Description

BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 1.280 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-9 MIL-M-38510
FEATURES PROVIDED: BURN IN AND BIPOLAR AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 22 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.2 WATTS
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

21049368-101

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013585656

NSN

5962-01-358-5656

View More Info

21049368-101

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013585656

NSN

5962-01-358-5656

MFG

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I

Description

BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 1.280 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-9 MIL-M-38510
FEATURES PROVIDED: BURN IN AND ERASABLE AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 22 INPUT
MAXIMUM POWER DISSIPATION RATING: 650.0 MILLIWATTS
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -2.0 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

5962-8686401LA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013585656

NSN

5962-01-358-5656

View More Info

5962-8686401LA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013585656

NSN

5962-01-358-5656

MFG

DLA LAND AND MARITIME OPNS SUPPORT GROUP DOCUMENT CONTROL UNIT

Description

BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 1.280 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-9 MIL-M-38510
FEATURES PROVIDED: BURN IN AND ERASABLE AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 22 INPUT
MAXIMUM POWER DISSIPATION RATING: 650.0 MILLIWATTS
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -2.0 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013585656

NSN

5962-01-358-5656

View More Info

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013585656

NSN

5962-01-358-5656

MFG

DLA LAND AND MARITIME

Description

BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 1.280 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-9 MIL-M-38510
FEATURES PROVIDED: BURN IN AND ERASABLE AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 22 INPUT
MAXIMUM POWER DISSIPATION RATING: 650.0 MILLIWATTS
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -2.0 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

UC3825Q

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962013585878

NSN

5962-01-358-5878

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UC3825Q

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962013585878

NSN

5962-01-358-5878

MFG

UNITRODE INTEGRATED CIRCUITS CORP DIV OF UNITRODE CORP

7908651-05

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013586200

NSN

5962-01-358-6200

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7908651-05

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013586200

NSN

5962-01-358-6200

MFG

LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2

Description

CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: PACER SPECIAL
SPECIAL FEATURES: ESD

AM25LSCD38DMB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013586200

NSN

5962-01-358-6200

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AM25LSCD38DMB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013586200

NSN

5962-01-358-6200

MFG

ADVANCED MICRO DEVICES INC DBA A M D

Description

CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: PACER SPECIAL
SPECIAL FEATURES: ESD

685-4909-002

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013586202

NSN

5962-01-358-6202

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685-4909-002

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013586202

NSN

5962-01-358-6202

MFG

ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS

685-4910-002

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013586203

NSN

5962-01-358-6203

View More Info

685-4910-002

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013586203

NSN

5962-01-358-6203

MFG

ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS

G371322-105

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013586204

NSN

5962-01-358-6204

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G371322-105

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013586204

NSN

5962-01-358-6204

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

(NON-CORE DATA) BIT QUANTITY: 64000
(NON-CORE DATA) WORD QUANTITY: 16000
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: MILSTAR
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
MEMORY DEVICE TYPE: ROM
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: MCKT,DGTL-CY7C261-55,PROGRAMMED
SPECIAL FEATURES: ALTERED ITEM MADE FROM G371924-2;CAGEC 49956;HCI;ESD;PROGRAMMED

G371321-105

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013586205

NSN

5962-01-358-6205

View More Info

G371321-105

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013586205

NSN

5962-01-358-6205

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

(NON-CORE DATA) BIT QUANTITY: 64000
(NON-CORE DATA) WORD QUANTITY: 16000
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: MILSTAR
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
MEMORY DEVICE TYPE: ROM
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: MCKT,DGTL-CY7C261-55,PROGRAMMED
SPECIAL FEATURES: ALTERED ITEM MADE FROM G371924-2;CAGEC 49956;HCI;ESD;PROGRAMMED

G371320-105

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013586206

NSN

5962-01-358-6206

View More Info

G371320-105

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013586206

NSN

5962-01-358-6206

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

(NON-CORE DATA) BIT QUANTITY: 64000
(NON-CORE DATA) WORD QUANTITY: 16000
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: MILSTAR
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
MEMORY DEVICE TYPE: ROM
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: MCKT,DGTL-CY7C261-55,PROGRAMMED
SPECIAL FEATURES: ALTERED ITEM MADE FROM G371924-2;CAGEC 49956;HCI;ESD;PROGRAMMED

G408390-114

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013586208

NSN

5962-01-358-6208

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G408390-114

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013586208

NSN

5962-01-358-6208

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

(NON-CORE DATA) BIT QUANTITY: 64000
(NON-CORE DATA) WORD QUANTITY: 16000
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: MILSTAR
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
MEMORY DEVICE TYPE: ROM
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: MCKT,DGTL-CY7C261-55,PROGRAMMED
SPECIAL FEATURES: ALTERED ITEM MADE FROM G371924-2;CAGEC 49956;HCI;ESD;PROGRAMMED

G371371-102

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013586216

NSN

5962-01-358-6216

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G371371-102

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013586216

NSN

5962-01-358-6216

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

(NON-CORE DATA) BIT QUANTITY: 16000
(NON-CORE DATA) WORD QUANTITY: 2000
BODY HEIGHT: 0.200 INCHES MAXIMUM
BODY LENGTH: 1.280 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: MILSTAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: MCKT,DIG-CY7C291-50,PROGRAMMED
SPECIAL FEATURES: ALTERED ITEM MADE FROM G339348-2;CAGEC 49956;HCI;ESD;PROGRAMMED
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 24 FLAT LEADS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM TOTAL SUPPLY AND 7.0 VOLTS MAXIMUM TOTAL SUPPLY

G371369-102

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013586217

NSN

5962-01-358-6217

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G371369-102

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013586217

NSN

5962-01-358-6217

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

(NON-CORE DATA) BIT QUANTITY: 6000
(NON-CORE DATA) WORD QUANTITY: 2000
BODY HEIGHT: 0.090 INCHES NOMINAL
BODY LENGTH: 0.640 INCHES NOMINAL
BODY WIDTH: 0.420 INCHES NOMINAL
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: MILSTAR
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: MCKT,DIGITAL-2KX8 PROGRAMMABLE READ ONLY MEMORY
SPECIAL FEATURES: ESD/HCI;ALTERED ITEM MADE FROM G339348-2;CAGEC 49956;PROGRAMMED
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 24 FLAT LEADS

G371323-105

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013586224

NSN

5962-01-358-6224

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G371323-105

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013586224

NSN

5962-01-358-6224

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

(NON-CORE DATA) BIT QUANTITY: 64000
(NON-CORE DATA) WORD QUANTITY: 16000
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: MILSTAR
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
MEMORY DEVICE TYPE: ROM
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: MCKT,DGTL-CY7C261-55,PROGRAMMED
SPECIAL FEATURES: ALTERED ITEM MADE FROM G371924-2;CAGEC 49956;HCI;ESD;PROGRAMMED

125-0123

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013586225

NSN

5962-01-358-6225

View More Info

125-0123

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013586225

NSN

5962-01-358-6225

MFG

ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS

Description

CASE OUTLINE SOURCE AND DESIGNATOR: D-10 MIL-M-38510
CRITICALITY CODE JUSTIFICATION: FEAT
SPECIAL FEATURES: PROGRAMMED;ESD

TB624A-10

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013586225

NSN

5962-01-358-6225

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TB624A-10

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013586225

NSN

5962-01-358-6225

MFG

INTERSIL CORPORATION

Description

CASE OUTLINE SOURCE AND DESIGNATOR: D-10 MIL-M-38510
CRITICALITY CODE JUSTIFICATION: FEAT
SPECIAL FEATURES: PROGRAMMED;ESD