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5961-01-456-5149
20 Products
94029-01TX
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014565149
NSN
5961-01-456-5149
94029-01TX
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014565149
NSN
5961-01-456-5149
MFG
DLA LAND AND MARITIME OPNS SUPPORT GROUP STANDARDIZATION UNIT
Description
COMPONENT NAME AND QUANTITY: 15 SEMICONDUCTOR DEVICE DIODE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 94029-01TX
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
III END ITEM IDENTIFICATION: 1055-01-423-7668
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 037Z3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -55.0 DEG CELSIUS AMBIENT AIR AND 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.192 INCHES MAXIMUM
OVERALL LENGTH: 0.930 INCHES MAXIMUM
OVERALL WIDTH: 0.485 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 WATTS MAXIMUM PEAK PULSE OUTPUT POWER ALL SEMICONDUCTOR
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 0.165 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 16 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 8.0 MAXIMUM REVERSE SUPRESSION VOLTAGE ALL SEMICONDUCTOR
Related Searches:
3700001P
TRANSISTOR
NSN, MFG P/N
5961014564537
NSN
5961-01-456-4537
MFG
PECO II INC.
Description
III END ITEM IDENTIFICATION: 5820014120426 E/I FSCM 80058
Related Searches:
312A5925P2
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014564545
NSN
5961-01-456-4545
312A5925P2
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014564545
NSN
5961-01-456-4545
MFG
BAE SYSTEMS CONTROLS INC.
Description
COMPONENT NAME AND QUANTITY: 15 SEMICONDUCTOR DEVICE DIODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE AND BURN IN AND QUALITY ASSURANCE LEVEL TXV
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
III END ITEM IDENTIFICATION: C-17A ACFT E/I FSCM 0U8A3
MOUNTING FACILITY QUANTITY: 16
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.192 INCHES MAXIMUM
OVERALL LENGTH: 0.930 INCHES MAXIMUM
OVERALL WIDTH: 0.480 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR
TERMINAL LENGTH: 0.190 INCHES MINIMUM
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 13.0 MAXIMUM REVERSE SUPRESSION VOLTAGE ALL SEMICONDUCTOR
Related Searches:
DZ891025C
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014564545
NSN
5961-01-456-4545
DZ891025C
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014564545
NSN
5961-01-456-4545
MFG
MICROSEMI CORP-COLORADO
Description
COMPONENT NAME AND QUANTITY: 15 SEMICONDUCTOR DEVICE DIODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE AND BURN IN AND QUALITY ASSURANCE LEVEL TXV
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
III END ITEM IDENTIFICATION: C-17A ACFT E/I FSCM 0U8A3
MOUNTING FACILITY QUANTITY: 16
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.192 INCHES MAXIMUM
OVERALL LENGTH: 0.930 INCHES MAXIMUM
OVERALL WIDTH: 0.480 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR
TERMINAL LENGTH: 0.190 INCHES MINIMUM
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 13.0 MAXIMUM REVERSE SUPRESSION VOLTAGE ALL SEMICONDUCTOR
Related Searches:
GZ95017E
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014564545
NSN
5961-01-456-4545
GZ95017E
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014564545
NSN
5961-01-456-4545
MFG
PROTEK DEVICES LP DBA PROTEK DEVICES
Description
COMPONENT NAME AND QUANTITY: 15 SEMICONDUCTOR DEVICE DIODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE AND BURN IN AND QUALITY ASSURANCE LEVEL TXV
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
III END ITEM IDENTIFICATION: C-17A ACFT E/I FSCM 0U8A3
MOUNTING FACILITY QUANTITY: 16
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.192 INCHES MAXIMUM
OVERALL LENGTH: 0.930 INCHES MAXIMUM
OVERALL WIDTH: 0.480 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR
TERMINAL LENGTH: 0.190 INCHES MINIMUM
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 13.0 MAXIMUM REVERSE SUPRESSION VOLTAGE ALL SEMICONDUCTOR
Related Searches:
161-1210-0011
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014564613
NSN
5961-01-456-4613
161-1210-0011
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014564613
NSN
5961-01-456-4613
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DBA NORTHROP GRUMMAN SYSTEMS
Description
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: JOINT STARS E/I FSCM 95542
MANUFACTURERS CODE: 95542
MFR SOURCE CONTROLLING REFERENCE: 161-1210-0011
SPEC/STD CONTROLLING DATA:
Related Searches:
SMC50290
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014564613
NSN
5961-01-456-4613
SMC50290
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014564613
NSN
5961-01-456-4613
MFG
NATEL ENGINEERING COMPANY INC . DBA POWERCUBE DIV NATEL CHATSWORTH DIVISION
Description
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: JOINT STARS E/I FSCM 95542
MANUFACTURERS CODE: 95542
MFR SOURCE CONTROLLING REFERENCE: 161-1210-0011
SPEC/STD CONTROLLING DATA:
Related Searches:
161-1210-0023
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014564614
NSN
5961-01-456-4614
161-1210-0023
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014564614
NSN
5961-01-456-4614
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DBA NORTHROP GRUMMAN SYSTEMS
Description
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR AND 4 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 10.00 AMPERES MAXIMUM BASE CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: JOINT STARS(MMRS) E/I FSCM 95542, NEST HIGHER ASSY. P/N 2277-3555425
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 4
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.380 INCHES NOMINAL
OVERALL LENGTH: 1.800 INCHES NOMINAL
OVERALL WIDTH: 1.690 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 200.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SPECIAL FEATURES: DIMENSIONS EXCLUSIVE OF FORMED LEADS
TERMINAL TYPE AND QUANTITY: 12 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: C95542-161-1210 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 8.0 MINIMUM BREAKDOWN VOL
Related Searches:
OM11744SFX
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014564614
NSN
5961-01-456-4614
OM11744SFX
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014564614
NSN
5961-01-456-4614
MFG
INTERNATIONAL RECTIFIER CORPORATION DIV HI-REL
Description
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR AND 4 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 10.00 AMPERES MAXIMUM BASE CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: JOINT STARS(MMRS) E/I FSCM 95542, NEST HIGHER ASSY. P/N 2277-3555425
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 4
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.380 INCHES NOMINAL
OVERALL LENGTH: 1.800 INCHES NOMINAL
OVERALL WIDTH: 1.690 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 200.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SPECIAL FEATURES: DIMENSIONS EXCLUSIVE OF FORMED LEADS
TERMINAL TYPE AND QUANTITY: 12 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: C95542-161-1210 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 8.0 MINIMUM BREAKDOWN VOL
Related Searches:
SMC50715
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014564614
NSN
5961-01-456-4614
SMC50715
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014564614
NSN
5961-01-456-4614
MFG
NATEL ENGINEERING COMPANY INC . DBA POWERCUBE DIV NATEL CHATSWORTH DIVISION
Description
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR AND 4 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 10.00 AMPERES MAXIMUM BASE CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: JOINT STARS(MMRS) E/I FSCM 95542, NEST HIGHER ASSY. P/N 2277-3555425
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 4
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.380 INCHES NOMINAL
OVERALL LENGTH: 1.800 INCHES NOMINAL
OVERALL WIDTH: 1.690 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 200.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SPECIAL FEATURES: DIMENSIONS EXCLUSIVE OF FORMED LEADS
TERMINAL TYPE AND QUANTITY: 12 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: C95542-161-1210 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 8.0 MINIMUM BREAKDOWN VOL
Related Searches:
DLZ-12A
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014564808
NSN
5961-01-456-4808
DLZ-12A
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014564808
NSN
5961-01-456-4808
MFG
PROTEK DEVICES LP DBA PROTEK DEVICES
Description
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: C-17 ACFT E/I FSCM 78711
Related Searches:
M235A791-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014564808
NSN
5961-01-456-4808
M235A791-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014564808
NSN
5961-01-456-4808
MFG
TELEPHONICS CORPORATION DBA COMMUNICATIONS SYSTEMS DIVISION DIV COMMUNICATIONS SYSTEMS DIVISION
Description
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: C-17 ACFT E/I FSCM 78711
Related Searches:
ES2D
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014565018
NSN
5961-01-456-5018
MFG
GENERAL SEMICONDUCTOR INC
Description
III END ITEM IDENTIFICATION: C-17A ACFT E/I FSCM 14936
Related Searches:
99211205
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014565028
NSN
5961-01-456-5028
99211205
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014565028
NSN
5961-01-456-5028
MFG
THALES
Description
III END ITEM IDENTIFICATION: C-17A ACFT E/I FSCM 27014
Related Searches:
LM4040AIM3-2.5
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014565028
NSN
5961-01-456-5028
LM4040AIM3-2.5
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014565028
NSN
5961-01-456-5028
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
III END ITEM IDENTIFICATION: C-17A ACFT E/I FSCM 27014
Related Searches:
IRFM240
TRANSISTOR
NSN, MFG P/N
5961014565058
NSN
5961-01-456-5058
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 18.00 AMPERES MAXIMUM DRAIN CURRENT AND 18.00 AMPERES MAXIMUM SOURCE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N7219
INCLOSURE MATERIAL: METAL AND CERAMIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-254AA
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/596
OVERALL HEIGHT: 0.249 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
OVERALL LENGTH: 0.790 INCHES MINIMUM AND 0.800 INCHES MAXIMUM
OVERALL WIDTH: 0.535 INCHES MINIMUM AND 0.545 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 125.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STAN
Related Searches:
JANTX2N7219
TRANSISTOR
NSN, MFG P/N
5961014565058
NSN
5961-01-456-5058
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 18.00 AMPERES MAXIMUM DRAIN CURRENT AND 18.00 AMPERES MAXIMUM SOURCE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N7219
INCLOSURE MATERIAL: METAL AND CERAMIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-254AA
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/596
OVERALL HEIGHT: 0.249 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
OVERALL LENGTH: 0.790 INCHES MINIMUM AND 0.800 INCHES MAXIMUM
OVERALL WIDTH: 0.535 INCHES MINIMUM AND 0.545 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 125.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STAN
Related Searches:
94030
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014565095
NSN
5961-01-456-5095
MFG
DLA LAND AND MARITIME OPNS SUPPORT GROUP STANDARDIZATION UNIT
Description
COMPONENT NAME AND QUANTITY: 15 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT ALL SEMICONDUCTOR DEVICE DIODE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 94030-02TX
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
III END ITEM IDENTIFICATION: 1055-01-423-7668
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 037Z3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -55.0 DEG CELSIUS AMBIENT AIR AND 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 94030
OVERALL HEIGHT: 0.192 INCHES MAXIMUM
OVERALL LENGTH: 0.910 INCHES NOMINAL
OVERALL WIDTH: 0.465 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 500.0 WATTS MAXIMUM PEAK PULSE OUTPUT POWER ALL SEMICONDUCTOR
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 0.165 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 16 PIN
VOLTAGE RATING IN VOLTS PER CHARACTE
Related Searches:
94030-02TX
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014565095
NSN
5961-01-456-5095
94030-02TX
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014565095
NSN
5961-01-456-5095
MFG
DLA LAND AND MARITIME OPNS SUPPORT GROUP DOCUMENT CONTROL UNIT
Description
COMPONENT NAME AND QUANTITY: 15 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT ALL SEMICONDUCTOR DEVICE DIODE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 94030-02TX
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
III END ITEM IDENTIFICATION: 1055-01-423-7668
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 037Z3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -55.0 DEG CELSIUS AMBIENT AIR AND 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 94030
OVERALL HEIGHT: 0.192 INCHES MAXIMUM
OVERALL LENGTH: 0.910 INCHES NOMINAL
OVERALL WIDTH: 0.465 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 500.0 WATTS MAXIMUM PEAK PULSE OUTPUT POWER ALL SEMICONDUCTOR
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 0.165 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 16 PIN
VOLTAGE RATING IN VOLTS PER CHARACTE
Related Searches:
DLZ-12A
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014565095
NSN
5961-01-456-5095
DLZ-12A
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014565095
NSN
5961-01-456-5095
MFG
PROTEK DEVICES LP DBA PROTEK DEVICES
Description
COMPONENT NAME AND QUANTITY: 15 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT ALL SEMICONDUCTOR DEVICE DIODE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 94030-02TX
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
III END ITEM IDENTIFICATION: 1055-01-423-7668
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 037Z3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -55.0 DEG CELSIUS AMBIENT AIR AND 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 94030
OVERALL HEIGHT: 0.192 INCHES MAXIMUM
OVERALL LENGTH: 0.910 INCHES NOMINAL
OVERALL WIDTH: 0.465 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 500.0 WATTS MAXIMUM PEAK PULSE OUTPUT POWER ALL SEMICONDUCTOR
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 0.165 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 16 PIN
VOLTAGE RATING IN VOLTS PER CHARACTE
