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5962-01-371-6086
20 Products
230395
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962013716086
NSN
5962-01-371-6086
MFG
EADS NORTH AMERICA INC. DBA EADS NORTH AMERICA TEST AND SERVICES DIV EADS NORTH AMERICA TEST AND SERVICES
Description
MICROCIRCUIT,DIGITAL
Related Searches:
72259-50
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013715624
NSN
5962-01-371-5624
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) BIT QUANTITY: 131072
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND MONOLITHIC AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 17 INPUT
MEMORY DEVICE TYPE: EPROM
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
ROM/PROM FAMILY 091
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013715624
NSN
5962-01-371-5624
ROM/PROM FAMILY 091
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013715624
NSN
5962-01-371-5624
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 131072
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND MONOLITHIC AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 17 INPUT
MEMORY DEVICE TYPE: EPROM
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
5962-876604VB
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013715625
NSN
5962-01-371-5625
MFG
DLA LAND AND MARITIME OPNS SUPPORT GROUP DOCUMENT CONTROL UNIT
Description
(NON-CORE DATA) BIT QUANTITY: 262144
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.960 INCHES NOMINAL
BODY WIDTH: 0.310 INCHES NOMINAL
CASE OUTLINE SOURCE AND DESIGNATOR: D-6 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 5962-8767604VA
FEATURES PROVIDED: BIDIRECTIONAL AND BURN IN AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MANUFACTURERS CODE: 67268
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: RAM
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 5962-87676
OPERATING TEMP RANGE: -55.0 TO 110.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
SPEC/STD CONTROLLING DATA:
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
5962-87676
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013715625
NSN
5962-01-371-5625
MFG
DLA LAND AND MARITIME OPNS SUPPORT GROUP DOCUMENT CONTROL UNIT
Description
(NON-CORE DATA) BIT QUANTITY: 262144
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.960 INCHES NOMINAL
BODY WIDTH: 0.310 INCHES NOMINAL
CASE OUTLINE SOURCE AND DESIGNATOR: D-6 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 5962-8767604VA
FEATURES PROVIDED: BIDIRECTIONAL AND BURN IN AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MANUFACTURERS CODE: 67268
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: RAM
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 5962-87676
OPERATING TEMP RANGE: -55.0 TO 110.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
SPEC/STD CONTROLLING DATA:
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
5962-8767604VA
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013715625
NSN
5962-01-371-5625
MFG
DLA LAND AND MARITIME OPNS SUPPORT GROUP DOCUMENT CONTROL UNIT
Description
(NON-CORE DATA) BIT QUANTITY: 262144
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.960 INCHES NOMINAL
BODY WIDTH: 0.310 INCHES NOMINAL
CASE OUTLINE SOURCE AND DESIGNATOR: D-6 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 5962-8767604VA
FEATURES PROVIDED: BIDIRECTIONAL AND BURN IN AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MANUFACTURERS CODE: 67268
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: RAM
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 5962-87676
OPERATING TEMP RANGE: -55.0 TO 110.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
SPEC/STD CONTROLLING DATA:
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
5962-8767604VX
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013715625
NSN
5962-01-371-5625
MFG
DLA LAND AND MARITIME OPNS SUPPORT GROUP DOCUMENT CONTROL UNIT
Description
(NON-CORE DATA) BIT QUANTITY: 262144
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.960 INCHES NOMINAL
BODY WIDTH: 0.310 INCHES NOMINAL
CASE OUTLINE SOURCE AND DESIGNATOR: D-6 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 5962-8767604VA
FEATURES PROVIDED: BIDIRECTIONAL AND BURN IN AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MANUFACTURERS CODE: 67268
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: RAM
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 5962-87676
OPERATING TEMP RANGE: -55.0 TO 110.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
SPEC/STD CONTROLLING DATA:
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013715625
NSN
5962-01-371-5625
MFG
MICRON TECHNOLOGY INC.
Description
(NON-CORE DATA) BIT QUANTITY: 262144
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.960 INCHES NOMINAL
BODY WIDTH: 0.310 INCHES NOMINAL
CASE OUTLINE SOURCE AND DESIGNATOR: D-6 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 5962-8767604VA
FEATURES PROVIDED: BIDIRECTIONAL AND BURN IN AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MANUFACTURERS CODE: 67268
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: RAM
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 5962-87676
OPERATING TEMP RANGE: -55.0 TO 110.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
SPEC/STD CONTROLLING DATA:
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
52518-1
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013715626
NSN
5962-01-371-5626
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) BIT QUANTITY: 131072
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND MONOLITHIC AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 17 INPUT
MEMORY DEVICE TYPE: EPROM
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
722959-50
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013715626
NSN
5962-01-371-5626
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) BIT QUANTITY: 131072
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND MONOLITHIC AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 17 INPUT
MEMORY DEVICE TYPE: EPROM
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
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D27128-25
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013715626
NSN
5962-01-371-5626
MFG
INTEL CORP SALES OFFICE
Description
(NON-CORE DATA) BIT QUANTITY: 131072
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND MONOLITHIC AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 17 INPUT
MEMORY DEVICE TYPE: EPROM
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013715626
NSN
5962-01-371-5626
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MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013715626
NSN
5962-01-371-5626
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 131072
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND MONOLITHIC AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 17 INPUT
MEMORY DEVICE TYPE: EPROM
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
52522-1
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013715627
NSN
5962-01-371-5627
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) BIT QUANTITY: 131072
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND MONOLITHIC AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 17 INPUT
MEMORY DEVICE TYPE: EPROM
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
722959-50
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013715627
NSN
5962-01-371-5627
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) BIT QUANTITY: 131072
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND MONOLITHIC AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 17 INPUT
MEMORY DEVICE TYPE: EPROM
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
ROM/PROM
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013715627
NSN
5962-01-371-5627
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 131072
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND MONOLITHIC AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 17 INPUT
MEMORY DEVICE TYPE: EPROM
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
52523-1
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013715628
NSN
5962-01-371-5628
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) BIT QUANTITY: 131072
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND MONOLITHIC AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 17 INPUT
MEMORY DEVICE TYPE: EPROM
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013715628
NSN
5962-01-371-5628
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 131072
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND MONOLITHIC AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 17 INPUT
MEMORY DEVICE TYPE: EPROM
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
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52473-2
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013715629
NSN
5962-01-371-5629
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) BIT QUANTITY: 131072
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND MONOLITHIC AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 17 INPUT
MEMORY DEVICE TYPE: EPROM
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
722959-50
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013715629
NSN
5962-01-371-5629
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) BIT QUANTITY: 131072
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND MONOLITHIC AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 17 INPUT
MEMORY DEVICE TYPE: EPROM
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013715629
NSN
5962-01-371-5629
ROM/PROM FAMILY 091
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013715629
NSN
5962-01-371-5629
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 131072
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND MONOLITHIC AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 17 INPUT
MEMORY DEVICE TYPE: EPROM
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
