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5962-01-384-4865

20 Products

G303767-2A

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013844865

NSN

5962-01-384-4865

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G303767-2A

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013844865

NSN

5962-01-384-4865

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND ELECTROSTATIC SENSITIVE AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM POWER DISSIPATION RATING: 1.2 WATTS
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 12.0 VOLTS MAXIMUM POWER SOURCE

LM185BYH2.5/883

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962013844560

NSN

5962-01-384-4560

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LM185BYH2.5/883

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962013844560

NSN

5962-01-384-4560

MFG

NATIONAL SEMICONDUCTOR CORPORATION

Description

BODY LENGTH: 0.080 INCHES MINIMUM AND 0.150 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.209 INCHES MINIMUM AND 0.219 INCHES MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM FORWARD
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 5962-8759406XA
DESIGN FUNCTION AND QUANTITY: 1 REGULATOR, VOLTAGE, DC
INCLOSURE CONFIGURATION: CAN
MANUFACTURERS CODE: 67268
MAXIMUM POWER DISSIPATION RATING: 113.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
SPEC/STD CONTROLLING DATA:
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.0 VOLTS MINIMUM APPLIED AND 1.0 VOLTS MAXIMUM APPLIED

54501-68702

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013844563

NSN

5962-01-384-4563

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54501-68702

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013844563

NSN

5962-01-384-4563

MFG

AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER

Description

MEMORY DEVICE TYPE: ROM
PART NAME ASSIGNED BY CONTROLLING AGENCY: ROM KIT 54501A

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013844563

NSN

5962-01-384-4563

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ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013844563

NSN

5962-01-384-4563

MFG

DLA LAND AND MARITIME

Description

MEMORY DEVICE TYPE: ROM
PART NAME ASSIGNED BY CONTROLLING AGENCY: ROM KIT 54501A

100114F

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013844574

NSN

5962-01-384-4574

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100114F

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013844574

NSN

5962-01-384-4574

MFG

PHILIPS SEMICONDUCTORS INC

Description

DESIGN FUNCTION AND QUANTITY: 1 COMPARATOR
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 5 INPUT
OPERATING TEMP RANGE: -30.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: EMITTER-COUPLED LOGIC
STORAGE TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -8.0 VOLTS MAXIMUM POWER SOURCE

6350100-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013844586

NSN

5962-01-384-4586

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6350100-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013844586

NSN

5962-01-384-4586

MFG

MCDONNELL DOUGLAS CORP MCDONNELL DOUGLAS AEROSPACE OPNS WEST

767-408000-2

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013844586

NSN

5962-01-384-4586

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767-408000-2

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013844586

NSN

5962-01-384-4586

MFG

MCDONNELL DOUGLAS CORP MCDONNELL DOUGLAS AEROSPACE OPNS WEST

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013844586

NSN

5962-01-384-4586

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ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013844586

NSN

5962-01-384-4586

MFG

DLA LAND AND MARITIME

03-0110403

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013844598

NSN

5962-01-384-4598

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03-0110403

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013844598

NSN

5962-01-384-4598

MFG

SAAB UNDERWATER SYSTEMS AB

Description

CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: STURGEON CLASS SSN (637), LOS ANGELES CLASS SSN (688), WASP CLASS LHD, FORRESTAL CLASS CV, SPRUANCE CLASS DD (963), OLIVER PERRY CLASS FFG, ARLEIGH BURKE CLASS DDG, NIMITZ CLASS CVN, TICONDEROGA CLASS CG (47).
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL

DS1225Y-200

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013844598

NSN

5962-01-384-4598

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DS1225Y-200

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013844598

NSN

5962-01-384-4598

MFG

DALLAS SEMICONDUCTOR CORPORATION DBA MAXIM DALLAS DIRECT

Description

CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: STURGEON CLASS SSN (637), LOS ANGELES CLASS SSN (688), WASP CLASS LHD, FORRESTAL CLASS CV, SPRUANCE CLASS DD (963), OLIVER PERRY CLASS FFG, ARLEIGH BURKE CLASS DDG, NIMITZ CLASS CVN, TICONDEROGA CLASS CG (47).
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL

5962-8680301LA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013844599

NSN

5962-01-384-4599

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5962-8680301LA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013844599

NSN

5962-01-384-4599

MFG

DLA LAND AND MARITIME OPNS SUPPORT GROUP DOCUMENT CONTROL UNIT

Description

INCLOSURE CONFIGURATION: DUAL-IN-LINE
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM APPLIED

G435286-2

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013844599

NSN

5962-01-384-4599

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G435286-2

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013844599

NSN

5962-01-384-4599

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

INCLOSURE CONFIGURATION: DUAL-IN-LINE
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM APPLIED

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013844599

NSN

5962-01-384-4599

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ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013844599

NSN

5962-01-384-4599

MFG

DLA LAND AND MARITIME

Description

INCLOSURE CONFIGURATION: DUAL-IN-LINE
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM APPLIED

G303767-4A

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013844810

NSN

5962-01-384-4810

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G303767-4A

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013844810

NSN

5962-01-384-4810

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND ELECTROSTATIC SENSITIVE AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM POWER DISSIPATION RATING: 1.2 WATTS
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 12.0 VOLTS MAXIMUM POWER SOURCE

M38510/50502BLA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013844810

NSN

5962-01-384-4810

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M38510/50502BLA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013844810

NSN

5962-01-384-4810

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND ELECTROSTATIC SENSITIVE AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM POWER DISSIPATION RATING: 1.2 WATTS
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 12.0 VOLTS MAXIMUM POWER SOURCE

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013844810

NSN

5962-01-384-4810

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ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013844810

NSN

5962-01-384-4810

MFG

DLA LAND AND MARITIME

Description

FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND ELECTROSTATIC SENSITIVE AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM POWER DISSIPATION RATING: 1.2 WATTS
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 12.0 VOLTS MAXIMUM POWER SOURCE

03577-60352

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013844822

NSN

5962-01-384-4822

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03577-60352

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013844822

NSN

5962-01-384-4822

MFG

AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER

Description

(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
FEATURES PROVIDED: PROGRAMMED AND ELECTROSTATIC SENSITIVE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 32.00 NANOSECONDS NOMINAL DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013844822

NSN

5962-01-384-4822

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ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013844822

NSN

5962-01-384-4822

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
FEATURES PROVIDED: PROGRAMMED AND ELECTROSTATIC SENSITIVE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 32.00 NANOSECONDS NOMINAL DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

03577-60344

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013844824

NSN

5962-01-384-4824

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03577-60344

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013844824

NSN

5962-01-384-4824

MFG

AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER

Description

FEATURES PROVIDED: PROGRAMMED AND ELECTROSTATIC SENSITIVE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 15.00 NANOSECONDS NOMINAL DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013844824

NSN

5962-01-384-4824

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ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013844824

NSN

5962-01-384-4824

MFG

DLA LAND AND MARITIME

Description

FEATURES PROVIDED: PROGRAMMED AND ELECTROSTATIC SENSITIVE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 15.00 NANOSECONDS NOMINAL DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE