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5961-00-262-0328

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18-1202

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002620328

NSN

5961-00-262-0328

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18-1202

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002620328

NSN

5961-00-262-0328

MFG

LOCKHEED MARTIN SERVICES INC .

Description

CURRENT RATING PER CHARACTERISTIC: 300.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIFICATION/STANDARD DATA: 80131-RELEASE1303 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM REVERSE VOLTAGE, PEAK

700224

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002620315

NSN

5961-00-262-0315

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700224

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002620315

NSN

5961-00-262-0315

MFG

ITT CORPORATION

Description

DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 1N21C
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILR1
NONDEFINITIVE SPEC/STD DATA: 1N21C TYPE
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:

84512-006

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002620317

NSN

5961-00-262-0317

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84512-006

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002620317

NSN

5961-00-262-0317

MFG

L-3 COMMUNICATIONS CORPORATION DBA NARDA MICROWAVE EAST

Description

DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N32
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL AND LOCATION: BODY SURFACE GOLD
INCLOSURE MATERIAL: GLASS AND METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 70.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/237
OVERALL DIAMETER: 0.220 INCHES MINIMUM AND 0.240 INCHES MAXIMUM
OVERALL LENGTH: 0.800 INCHES MINIMUM AND 0.840 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: S-BAND DETECTOR
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/237 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 PIN AND 1 CASE
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION

JAN1N32

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002620317

NSN

5961-00-262-0317

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JAN1N32

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002620317

NSN

5961-00-262-0317

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N32
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL AND LOCATION: BODY SURFACE GOLD
INCLOSURE MATERIAL: GLASS AND METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 70.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/237
OVERALL DIAMETER: 0.220 INCHES MINIMUM AND 0.240 INCHES MAXIMUM
OVERALL LENGTH: 0.800 INCHES MINIMUM AND 0.840 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: S-BAND DETECTOR
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/237 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 PIN AND 1 CASE
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION

103-271

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961002620318

NSN

5961-00-262-0318

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103-271

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961002620318

NSN

5961-00-262-0318

MFG

ZENITH ELECTRONICS CORPORATION

Description

COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: GLASS ALL SEMICONDUCTOR DEVICE DIODE
MOUNTING METHOD: TERMINAL ALL SEMICONDUCTOR DEVICE DIODE
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: GERMANIUM ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL LENGTH: 1.000 INCHES MINIMUM ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD ALL SEMICONDUCTOR DEVICE DIODE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM REVERSE VOLTAGE, PEAK ALL SEMICONDUCTOR DEVICE DIODE

1N35

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961002620318

NSN

5961-00-262-0318

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1N35

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961002620318

NSN

5961-00-262-0318

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: GLASS ALL SEMICONDUCTOR DEVICE DIODE
MOUNTING METHOD: TERMINAL ALL SEMICONDUCTOR DEVICE DIODE
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: GERMANIUM ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL LENGTH: 1.000 INCHES MINIMUM ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD ALL SEMICONDUCTOR DEVICE DIODE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM REVERSE VOLTAGE, PEAK ALL SEMICONDUCTOR DEVICE DIODE

353-0140-00

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961002620318

NSN

5961-00-262-0318

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353-0140-00

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961002620318

NSN

5961-00-262-0318

MFG

ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS

Description

COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: GLASS ALL SEMICONDUCTOR DEVICE DIODE
MOUNTING METHOD: TERMINAL ALL SEMICONDUCTOR DEVICE DIODE
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: GERMANIUM ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL LENGTH: 1.000 INCHES MINIMUM ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD ALL SEMICONDUCTOR DEVICE DIODE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM REVERSE VOLTAGE, PEAK ALL SEMICONDUCTOR DEVICE DIODE

1N42

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961002620319

NSN

5961-00-262-0319

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1N42

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961002620319

NSN

5961-00-262-0319

MFG

GENERAL DYNAMICS C4 SYSTEMS INC.

Description

COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 4 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 22.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 100.00 MILLIAMPERES MAXIMUM PEAK FORWARD SURGE CURRENT ALL SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: METAL ALL SEMICONDUCTOR DEVICE DIODE
MOUNTING METHOD: TERMINAL ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: GERMANIUM ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL TYPE AND QUANTITY: 2 PIN ALL SEMICONDUCTOR DEVICE DIODE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 MAXIMUM REVERSE VOLTAGE, PEAK ALL SEMICONDUCTOR DEVICE DIODE

1N53

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002620322

NSN

5961-00-262-0322

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1N53

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002620322

NSN

5961-00-262-0322

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 1N53
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-238
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 1 PIN AND 1 BINDING POST

0S022630

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002620323

NSN

5961-00-262-0323

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0S022630

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002620323

NSN

5961-00-262-0323

MFG

NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER

Description

NONDEFINITIVE SPEC/STD DATA: 1N54 TYPE
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

1N54

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002620323

NSN

5961-00-262-0323

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1N54

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002620323

NSN

5961-00-262-0323

MFG

GENERAL DYNAMICS C4 SYSTEMS INC.

Description

NONDEFINITIVE SPEC/STD DATA: 1N54 TYPE
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

237847

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002620323

NSN

5961-00-262-0323

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237847

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002620323

NSN

5961-00-262-0323

MFG

RCA CORP DISTRIBUTOR AND SPECIAL PRODUCTS DIV

Description

NONDEFINITIVE SPEC/STD DATA: 1N54 TYPE
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

1N55

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002620325

NSN

5961-00-262-0325

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1N55

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002620325

NSN

5961-00-262-0325

MFG

JOINT ARMY-NAVY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 1N55
MANUFACTURERS CODE: 81350
NONDEFINITIVE SPEC/STD DATA: 1N55 TYPE
SEMICONDUCTOR MATERIAL: GERMANIUM
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

XL1030

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002620325

NSN

5961-00-262-0325

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XL1030

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002620325

NSN

5961-00-262-0325

MFG

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC.

Description

DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 1N55
MANUFACTURERS CODE: 81350
NONDEFINITIVE SPEC/STD DATA: 1N55 TYPE
SEMICONDUCTOR MATERIAL: GERMANIUM
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

1910-0039

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002620326

NSN

5961-00-262-0326

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1910-0039

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002620326

NSN

5961-00-262-0326

MFG

HEWLETT PACKARD CO

Description

CURRENT RATING PER CHARACTERISTIC: 4.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 90.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.250 INCHES MAXIMUM
OVERALL LENGTH: 0.875 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE1303 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 170.0 MAXIMUM REVERSE VOLTAGE, PEAK

1N55A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002620326

NSN

5961-00-262-0326

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1N55A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002620326

NSN

5961-00-262-0326

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 4.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 90.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.250 INCHES MAXIMUM
OVERALL LENGTH: 0.875 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE1303 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 170.0 MAXIMUM REVERSE VOLTAGE, PEAK

1N56

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002620328

NSN

5961-00-262-0328

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1N56

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002620328

NSN

5961-00-262-0328

MFG

GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP

Description

CURRENT RATING PER CHARACTERISTIC: 300.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIFICATION/STANDARD DATA: 80131-RELEASE1303 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM REVERSE VOLTAGE, PEAK

1N56A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002620328

NSN

5961-00-262-0328

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1N56A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002620328

NSN

5961-00-262-0328

MFG

GENERAL DYNAMICS C4 SYSTEMS INC.

Description

CURRENT RATING PER CHARACTERISTIC: 300.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIFICATION/STANDARD DATA: 80131-RELEASE1303 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM REVERSE VOLTAGE, PEAK

24569

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002620328

NSN

5961-00-262-0328

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24569

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002620328

NSN

5961-00-262-0328

MFG

TELEPHONICS CORP/PRD INSTRUMENTS

Description

CURRENT RATING PER CHARACTERISTIC: 300.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIFICATION/STANDARD DATA: 80131-RELEASE1303 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM REVERSE VOLTAGE, PEAK

825617

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002620328

NSN

5961-00-262-0328

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825617

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002620328

NSN

5961-00-262-0328

MFG

PICATINNY ARSENAL

Description

CURRENT RATING PER CHARACTERISTIC: 300.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIFICATION/STANDARD DATA: 80131-RELEASE1303 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM REVERSE VOLTAGE, PEAK