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5961-01-010-1503

20 Products

932A283-3

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010101503

NSN

5961-01-010-1503

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932A283-3

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010101503

NSN

5961-01-010-1503

MFG

HAMILTON SUNDSTRAND CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.200 INCHES NOMINAL
OVERALL LENGTH: 0.375 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.250 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK

932A512-3

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010101502

NSN

5961-01-010-1502

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932A512-3

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010101502

NSN

5961-01-010-1502

MFG

HAMILTON SUNDSTRAND CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.395 INCHES MINIMUM AND 0.405 INCHES MAXIMUM
OVERALL LENGTH: 0.234 INCHES MINIMUM AND 0.246 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 83843-932A512 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK

MR 822

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010101502

NSN

5961-01-010-1502

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MR 822

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010101502

NSN

5961-01-010-1502

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.395 INCHES MINIMUM AND 0.405 INCHES MAXIMUM
OVERALL LENGTH: 0.234 INCHES MINIMUM AND 0.246 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 83843-932A512 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK

S3A2F

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010101503

NSN

5961-01-010-1503

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S3A2F

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010101503

NSN

5961-01-010-1503

MFG

SEMICON COMPONENTS INC

Description

CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.200 INCHES NOMINAL
OVERALL LENGTH: 0.375 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.250 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK

582R072H01

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010101527

NSN

5961-01-010-1527

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582R072H01

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010101527

NSN

5961-01-010-1527

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS

Description

INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 71.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 4
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 1.000 INCHES NOMINAL
OVERALL LENGTH: 2.500 INCHES NOMINAL
OVERALL WIDTH: 2.000 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 CONNECTOR, COAXIAL
TEST DATA DOCUMENT: 97942-582R072 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 27.0 MINIMUM SOURCE SUPPLY VOLTAGE AND 33.4 MAXIMUM SOURCE SUPPLY VOLTAGE

NC4288

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010101527

NSN

5961-01-010-1527

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NC4288

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010101527

NSN

5961-01-010-1527

MFG

WIRELESS TELECOM GROUP INC. DBA NOISECOM

Description

INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 71.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 4
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 1.000 INCHES NOMINAL
OVERALL LENGTH: 2.500 INCHES NOMINAL
OVERALL WIDTH: 2.000 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 CONNECTOR, COAXIAL
TEST DATA DOCUMENT: 97942-582R072 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 27.0 MINIMUM SOURCE SUPPLY VOLTAGE AND 33.4 MAXIMUM SOURCE SUPPLY VOLTAGE

A396E

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010101556

NSN

5961-01-010-1556

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A396E

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010101556

NSN

5961-01-010-1556

MFG

GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT POWER COMPONENTS OPN

Description

CURRENT RATING PER CHARACTERISTIC: 300.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: GENERAL PURPOSE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-200AA
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 1.700 MILLIMETERS MAXIMUM
OVERALL LENGTH: 0.600 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE

R23AF6B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010101556

NSN

5961-01-010-1556

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R23AF6B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010101556

NSN

5961-01-010-1556

MFG

INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.

Description

CURRENT RATING PER CHARACTERISTIC: 300.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: GENERAL PURPOSE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-200AA
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 1.700 MILLIMETERS MAXIMUM
OVERALL LENGTH: 0.600 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE

801545-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010101690

NSN

5961-01-010-1690

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801545-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010101690

NSN

5961-01-010-1690

MFG

RAYTHEON COMPANY

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.645 INCHES MAXIMUM
OVERALL LENGTH: 0.645 INCHES MAXIMUM
OVERALL WIDTH: 0.240 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 PIN

D5910-99

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010101690

NSN

5961-01-010-1690

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D5910-99

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010101690

NSN

5961-01-010-1690

MFG

SKYWORKS SOLUTIONS INC.

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.645 INCHES MAXIMUM
OVERALL LENGTH: 0.645 INCHES MAXIMUM
OVERALL WIDTH: 0.240 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 PIN

MA40051H

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010101690

NSN

5961-01-010-1690

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MA40051H

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010101690

NSN

5961-01-010-1690

MFG

M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.645 INCHES MAXIMUM
OVERALL LENGTH: 0.645 INCHES MAXIMUM
OVERALL WIDTH: 0.240 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 PIN

UX40051H

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010101690

NSN

5961-01-010-1690

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UX40051H

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010101690

NSN

5961-01-010-1690

MFG

SEMI-GENERAL INC .

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.645 INCHES MAXIMUM
OVERALL LENGTH: 0.645 INCHES MAXIMUM
OVERALL WIDTH: 0.240 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 PIN

13-105285-5

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010101691

NSN

5961-01-010-1691

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13-105285-5

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010101691

NSN

5961-01-010-1691

MFG

GENERAL DYNAMICS C4 SYSTEMS INC.

Description

DESIGN CONTROL REFERENCE: 13-105285-5
MANUFACTURERS CODE: 04655
SEMICONDUCTOR MATERIAL: SILICON
THE MANUFACTURERS DATA:

MJE1100

TRANSISTOR

NSN, MFG P/N

5961010101755

NSN

5961-01-010-1755

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MJE1100

TRANSISTOR

NSN, MFG P/N

5961010101755

NSN

5961-01-010-1755

MFG

HARRIS CORPORATION DBA HARRIS RF COMMUNICATION

2N5941

TRANSISTOR

NSN, MFG P/N

5961010102057

NSN

5961-01-010-2057

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2N5941

TRANSISTOR

NSN, MFG P/N

5961010102057

NSN

5961-01-010-2057

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 6.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.383 INCHES MAXIMUM
OVERALL LENGTH: 0.281 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 80.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE6239 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 4 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 65.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 35.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 4.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

50210310

TRANSISTOR

NSN, MFG P/N

5961010102059

NSN

5961-01-010-2059

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50210310

TRANSISTOR

NSN, MFG P/N

5961010102059

NSN

5961-01-010-2059

MFG

SYNTEGRA / USA/ INC COMPUTER PARTS AND SUPPLIES ARH205

Description

DESIGN CONTROL REFERENCE: 50210310
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 59661
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

NN3646

TRANSISTOR

NSN, MFG P/N

5961010102059

NSN

5961-01-010-2059

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NN3646

TRANSISTOR

NSN, MFG P/N

5961010102059

NSN

5961-01-010-2059

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

DESIGN CONTROL REFERENCE: 50210310
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 59661
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

50210610

TRANSISTOR

NSN, MFG P/N

5961010102061

NSN

5961-01-010-2061

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50210610

TRANSISTOR

NSN, MFG P/N

5961010102061

NSN

5961-01-010-2061

MFG

SYNTEGRA / USA/ INC COMPUTER PARTS AND SUPPLIES ARH205

Description

CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.410 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -25.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -25.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND -4.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

NN3638

TRANSISTOR

NSN, MFG P/N

5961010102061

NSN

5961-01-010-2061

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NN3638

TRANSISTOR

NSN, MFG P/N

5961010102061

NSN

5961-01-010-2061

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.410 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -25.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -25.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND -4.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

50210710

TRANSISTOR

NSN, MFG P/N

5961010102062

NSN

5961-01-010-2062

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50210710

TRANSISTOR

NSN, MFG P/N

5961010102062

NSN

5961-01-010-2062

MFG

SYNTEGRA / USA/ INC COMPUTER PARTS AND SUPPLIES ARH205

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD