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5961-01-426-8499
20 Products
312A5634P1
TRANSISTOR
NSN, MFG P/N
5961014268499
NSN
5961-01-426-8499
MFG
BAE SYSTEMS CONTROLS INC.
Description
III END ITEM IDENTIFICATION: C-17A ACFT
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.808 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 14 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 100.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
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NE88933-T1B
TRANSISTOR
NSN, MFG P/N
5961014265230
NSN
5961-01-426-5230
MFG
CALIFORNIA EASTERN LABS
Description
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
801261-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014265653
NSN
5961-01-426-5653
MFG
RAYTHEON COMPANY
Description
SEMICONDUCTOR DEVICE,DIODE
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172-20771
TRANSISTOR
NSN, MFG P/N
5961014266912
NSN
5961-01-426-6912
MFG
POWER-ONE DC POWER SUPPLIES
Description
TRANSISTOR
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1942
TRANSIT CASE ASSEMB
NSN, MFG P/N
5961014267820
NSN
5961-01-426-7820
MFG
TECH RESOURCES INC. DBA T R I
Description
III END ITEM IDENTIFICATION: F-18 ACFT
Related Searches:
101KL120S30
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014267916
NSN
5961-01-426-7916
101KL120S30
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014267916
NSN
5961-01-426-7916
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
III END ITEM IDENTIFICATION: MACHINE GUN 40/70, FINCANTIERI
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: THREADED STUD
SEMICONDUCTOR MATERIAL: SILICON
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MINIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 1600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
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06-12001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014268291
NSN
5961-01-426-8291
MFG
SIERRA NEVADA CORPORATION
Description
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.370 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
1.5KE350A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014268291
NSN
5961-01-426-8291
MFG
SEMITRONICS CORP
Description
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.370 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
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A3088945-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014268291
NSN
5961-01-426-8291
A3088945-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014268291
NSN
5961-01-426-8291
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.370 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
VSZ911350A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014268291
NSN
5961-01-426-8291
VSZ911350A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014268291
NSN
5961-01-426-8291
MFG
E2V TECHNOLOGIES UK LIMITED
Description
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.370 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
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SEN-B-155-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014268310
NSN
5961-01-426-8310
SEN-B-155-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014268310
NSN
5961-01-426-8310
MFG
RSM ELECTRON POWER INC . DBA RSM SENSITRON SEMICONDUCTOR
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1.5KE30CA
TRANSISTOR
NSN, MFG P/N
5961014268368
NSN
5961-01-426-8368
MFG
SGS THOMPSON/INMOS CORP
Description
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.370 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
A3088944-1
TRANSISTOR
NSN, MFG P/N
5961014268368
NSN
5961-01-426-8368
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.370 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
11200002-1
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014268420
NSN
5961-01-426-8420
11200002-1
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014268420
NSN
5961-01-426-8420
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DIV LASER SYSTEMS
Description
INCLOSURE MATERIAL: METAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 WIRE LOOP
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75961LLDK3A303
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014268420
NSN
5961-01-426-8420
75961LLDK3A303
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014268420
NSN
5961-01-426-8420
MFG
NAVAL INVENTORY CONTROL POINT
Description
INCLOSURE MATERIAL: METAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 WIRE LOOP
Related Searches:
SES540
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014268420
NSN
5961-01-426-8420
SES540
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014268420
NSN
5961-01-426-8420
MFG
SEMITRONICS CORP
Description
INCLOSURE MATERIAL: METAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 WIRE LOOP
Related Searches:
20-01402-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014268422
NSN
5961-01-426-8422
20-01402-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014268422
NSN
5961-01-426-8422
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.104 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
A61251P325
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014268422
NSN
5961-01-426-8422
A61251P325
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014268422
NSN
5961-01-426-8422
MFG
SKYWORKS SOLUTIONS INC.
Description
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.104 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
GC47218-17
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014268422
NSN
5961-01-426-8422
GC47218-17
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014268422
NSN
5961-01-426-8422
MFG
MICROSEMI CORP-MASSACHUSETTS DBA MICROSEMI-LOWELL DIV MICROSEMI - LOWELL
Description
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.104 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
94-7633
TRANSISTOR
NSN, MFG P/N
5961014268499
NSN
5961-01-426-8499
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
III END ITEM IDENTIFICATION: C-17A ACFT
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.808 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 14 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 100.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
