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5961-01-370-4208
20 Products
96704
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013704208
NSN
5961-01-370-4208
MFG
PRESTOLITE ELECTRIC INCORPORATED
Description
III END ITEM IDENTIFICATION: USED ON 2260AC OR 2266AA ALTERNATOR
SPECIAL FEATURES: D E HOUSING AND RECTIFIER ASSY; CONTAINS DRIVE END AND DIODE
Related Searches:
NHA532A275-111
TRANSISTOR
NSN, MFG P/N
5961013702825
NSN
5961-01-370-2825
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
CRITICALITY CODE JUSTIFICATION: FEAT
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND RADIATION TOLERANT
III END ITEM IDENTIFICATION: FLIGHT CONTROL
INTERNAL CONFIGURATION: FIELD EFFECT
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
TEST DATA DOCUMENT: 88818-A532A275 DRAWING
Related Searches:
VP0550
TRANSISTOR
NSN, MFG P/N
5961013702825
NSN
5961-01-370-2825
MFG
SUPERTEX INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
CRITICALITY CODE JUSTIFICATION: FEAT
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND RADIATION TOLERANT
III END ITEM IDENTIFICATION: FLIGHT CONTROL
INTERNAL CONFIGURATION: FIELD EFFECT
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
TEST DATA DOCUMENT: 88818-A532A275 DRAWING
Related Searches:
1N5825
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013702826
NSN
5961-01-370-2826
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 AMPERES NOMINAL PEAK FORWARD SURGE CURRENT
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL DIAMETER: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.980 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 88818-A531A256 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
A531A162-101
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013702826
NSN
5961-01-370-2826
A531A162-101
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013702826
NSN
5961-01-370-2826
MFG
KEARFOTT CORPORATION DBA KEARFOTT DIV GUIDANCE AND NAVIGATION DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 AMPERES NOMINAL PEAK FORWARD SURGE CURRENT
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL DIAMETER: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.980 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 88818-A531A256 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
NHA531A256-221
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013702826
NSN
5961-01-370-2826
NHA531A256-221
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013702826
NSN
5961-01-370-2826
MFG
DLA LAND AND MARITIME
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 AMPERES NOMINAL PEAK FORWARD SURGE CURRENT
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL DIAMETER: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.980 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 88818-A531A256 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
A532A260-101
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013702827
NSN
5961-01-370-2827
A532A260-101
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013702827
NSN
5961-01-370-2827
MFG
KEARFOTT CORPORATION DBA KEARFOTT DIV GUIDANCE AND NAVIGATION DIVISION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE P-CHANNEL INSULATED GATE TYPE N-CHANNEL INSULATED GATE TYPE P-CHANNEL INSULATED GATE TYPE
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
III END ITEM IDENTIFICATION: FLIGHT CONTROL
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL HEIGHT: 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.785 INCHES MAXIMUM
OVERALL WIDTH: 0.310 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.4 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 88818-A532A315 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE ALL TRANSISTOR
Related Searches:
IRFG6110
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013702827
NSN
5961-01-370-2827
IRFG6110
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013702827
NSN
5961-01-370-2827
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE P-CHANNEL INSULATED GATE TYPE N-CHANNEL INSULATED GATE TYPE P-CHANNEL INSULATED GATE TYPE
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
III END ITEM IDENTIFICATION: FLIGHT CONTROL
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL HEIGHT: 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.785 INCHES MAXIMUM
OVERALL WIDTH: 0.310 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.4 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 88818-A532A315 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE ALL TRANSISTOR
Related Searches:
NHA532A315
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013702827
NSN
5961-01-370-2827
NHA532A315
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013702827
NSN
5961-01-370-2827
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE P-CHANNEL INSULATED GATE TYPE N-CHANNEL INSULATED GATE TYPE P-CHANNEL INSULATED GATE TYPE
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
III END ITEM IDENTIFICATION: FLIGHT CONTROL
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL HEIGHT: 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.785 INCHES MAXIMUM
OVERALL WIDTH: 0.310 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.4 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 88818-A532A315 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE ALL TRANSISTOR
Related Searches:
SK3935
TRANSISTOR
NSN, MFG P/N
5961013703297
NSN
5961-01-370-3297
MFG
LOCKHEED MARTIN SERVICES INC .
Description
TRANSISTOR
Related Searches:
646-8550-001
TRANSISTOR
NSN, MFG P/N
5961013703627
NSN
5961-01-370-3627
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
III END ITEM IDENTIFICATION: USED ON SEAHAWK HELICOPTER,MODEL S70B-2 HELICOPTER
Related Searches:
JAN1N6047
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013703629
NSN
5961-01-370-3629
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N6047
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-13
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/507
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
Related Searches:
G164619
TRANSISTOR
NSN, MFG P/N
5961013704084
NSN
5961-01-370-4084
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
III END ITEM IDENTIFICATION: FFG GUIDED MISSILE FRIGATE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 49956
MFR SOURCE CONTROLLING REFERENCE: G164619
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
Related Searches:
G164619-1
TRANSISTOR
NSN, MFG P/N
5961013704084
NSN
5961-01-370-4084
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
III END ITEM IDENTIFICATION: FFG GUIDED MISSILE FRIGATE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 49956
MFR SOURCE CONTROLLING REFERENCE: G164619
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
Related Searches:
AF039645
TRANSISTOR
NSN, MFG P/N
5961013704327
NSN
5961-01-370-4327
MFG
M P D TECHNOLOGIES INC
Description
TRANSISTOR
Related Searches:
A532A343-111
TRANSISTOR
NSN, MFG P/N
5961013704878
NSN
5961-01-370-4878
MFG
KEARFOTT CORPORATION DBA KEARFOTT DIV GUIDANCE AND NAVIGATION DIVISION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CRITICALITY CODE JUSTIFICATION: FEAT
FEATURES PROVIDED: RADIATION HARDENED
III END ITEM IDENTIFICATION: FLIGHT CONTROL
INTERNAL CONFIGURATION: FIELD EFFECT
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
TEST DATA DOCUMENT: 88818-A532A343 DRAWING
Related Searches:
NHA532A343-111
TRANSISTOR
NSN, MFG P/N
5961013704878
NSN
5961-01-370-4878
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CRITICALITY CODE JUSTIFICATION: FEAT
FEATURES PROVIDED: RADIATION HARDENED
III END ITEM IDENTIFICATION: FLIGHT CONTROL
INTERNAL CONFIGURATION: FIELD EFFECT
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
TEST DATA DOCUMENT: 88818-A532A343 DRAWING
Related Searches:
VN0106N9
TRANSISTOR
NSN, MFG P/N
5961013704878
NSN
5961-01-370-4878
MFG
SUPERTEX INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CRITICALITY CODE JUSTIFICATION: FEAT
FEATURES PROVIDED: RADIATION HARDENED
III END ITEM IDENTIFICATION: FLIGHT CONTROL
INTERNAL CONFIGURATION: FIELD EFFECT
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
TEST DATA DOCUMENT: 88818-A532A343 DRAWING
Related Searches:
A531A240-111
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013704879
NSN
5961-01-370-4879
A531A240-111
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013704879
NSN
5961-01-370-4879
MFG
KEARFOTT CORPORATION DBA KEARFOTT DIV GUIDANCE AND NAVIGATION DIVISION
Description
CRITICALITY CODE JUSTIFICATION: FEAT
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM; JUNCTION PATTERN ARRANGEMENT: PIN
TEST DATA DOCUMENT: 88818-A531A240 DRAWING
Related Searches:
NHA531A240-201
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013704879
NSN
5961-01-370-4879
NHA531A240-201
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013704879
NSN
5961-01-370-4879
MFG
DLA LAND AND MARITIME
Description
CRITICALITY CODE JUSTIFICATION: FEAT
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM; JUNCTION PATTERN ARRANGEMENT: PIN
TEST DATA DOCUMENT: 88818-A531A240 DRAWING
