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5961-01-180-5707
20 Products
L8C6V5L
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011805707
NSN
5961-01-180-5707
MFG
SEMITRON INDUSTRIES LTD
Description
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.200 INCHES NOMINAL
OVERALL LENGTH: 0.370 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.5 NOMINAL REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
3578630-3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011804660
NSN
5961-01-180-4660
MFG
RAYTHEON COMPANY
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
3578630-4
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011804661
NSN
5961-01-180-4661
MFG
RAYTHEON COMPANY
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
3578630-5
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011804662
NSN
5961-01-180-4662
MFG
RAYTHEON COMPANY
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
3578630-6
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011804663
NSN
5961-01-180-4663
MFG
RAYTHEON COMPANY
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
3578615-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011804664
NSN
5961-01-180-4664
MFG
RAYTHEON COMPANY
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
3578615-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011804665
NSN
5961-01-180-4665
MFG
RAYTHEON COMPANY
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
BS9300C-461
TRANSISTOR
NSN, MFG P/N
5961011805478
NSN
5961-01-180-5478
MFG
MEGGITT UK LTD T/A MEGGITT AVIONICS
Description
TRANSISTOR
Related Searches:
5003-301A
TRANSISTOR
NSN, MFG P/N
5961011805631
NSN
5961-01-180-5631
MFG
PERILLO INDUSTRIES INC DBA CENTURY ELECTRONICS
Description
TRANSISTOR
Related Searches:
5003-401A
TRANSISTOR
NSN, MFG P/N
5961011805632
NSN
5961-01-180-5632
MFG
PERILLO INDUSTRIES INC DBA CENTURY ELECTRONICS
Description
TRANSISTOR
Related Searches:
12276948
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011805634
NSN
5961-01-180-5634
MFG
U S ARMY TANK AUTOMOTIVE COMMAND AMSTA-IM-MM
Description
III PART NAME ASSIGNED BY CONTROLLING AGENCY: COUPLING ASSEMBLY, DIODE
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 9.750 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 1 QUICK DISCONNECT, FEMALE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 28.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
Related Searches:
JAN1N5645A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011805634
NSN
5961-01-180-5634
JAN1N5645A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011805634
NSN
5961-01-180-5634
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
III PART NAME ASSIGNED BY CONTROLLING AGENCY: COUPLING ASSEMBLY, DIODE
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 9.750 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 1 QUICK DISCONNECT, FEMALE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 28.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
Related Searches:
5003-701A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011805636
NSN
5961-01-180-5636
MFG
PERILLO INDUSTRIES INC DBA CENTURY ELECTRONICS
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
5003-102A
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011805656
NSN
5961-01-180-5656
5003-102A
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011805656
NSN
5961-01-180-5656
MFG
PERILLO INDUSTRIES INC DBA CENTURY ELECTRONICS
Description
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
Related Searches:
1-5KE18A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011805706
NSN
5961-01-180-5706
MFG
GENERAL SEMICONDUCTOR INDUSTRIES INC
Description
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.370 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
1.5KE18A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011805706
NSN
5961-01-180-5706
MFG
PROTEK DEVICES LP DBA PROTEK DEVICES
Description
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.370 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
2328
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011805706
NSN
5961-01-180-5706
MFG
VAISALA OYJ
Description
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.370 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
41144-903-00-6
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011805706
NSN
5961-01-180-5706
41144-903-00-6
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011805706
NSN
5961-01-180-5706
MFG
BRITISH AEROSPACE DEFENCE SYSTEMS LT D T/A BAE SYSTEMS
Description
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.370 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
446012-0001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011805706
NSN
5961-01-180-5706
446012-0001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011805706
NSN
5961-01-180-5706
MFG
THALES ATM INC.
Description
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.370 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
LCE6.5
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011805707
NSN
5961-01-180-5707
MFG
GENERAL SEMICONDUCTOR INDUSTRIES INC
Description
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.200 INCHES NOMINAL
OVERALL LENGTH: 0.370 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.5 NOMINAL REVERSE VOLTAGE, INSTANTANEOUS
