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5961-00-499-7971
20 Products
1N2130
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004997971
NSN
5961-00-499-7971
MFG
INTERNATIONAL RECTIFIER CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 60.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: D0-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.453 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
GI543
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004997935
NSN
5961-00-499-7935
MFG
POWER DESIGNS INC
Description
DESIGN CONTROL REFERENCE: GI543
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 98095
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.070 INCHES NOMINAL
OVERALL LENGTH: 0.160 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
15-02762-01
TRANSISTOR
NSN, MFG P/N
5961004997938
NSN
5961-00-499-7938
MFG
COMPAQ FEDERAL LLC
Description
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
15-02762-00
TRANSISTOR
NSN, MFG P/N
5961004997939
NSN
5961-00-499-7939
MFG
COMPAQ FEDERAL LLC
Description
INTERNAL CONFIGURATION: JUNCTION CONTACT
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
Related Searches:
15-03097-00
TRANSISTOR
NSN, MFG P/N
5961004997940
NSN
5961-00-499-7940
MFG
COMPAQ FEDERAL LLC
Description
TRANSISTOR
Related Searches:
1503098
TRANSISTOR
NSN, MFG P/N
5961004997941
NSN
5961-00-499-7941
MFG
COMPAQ FEDERAL LLC
Description
TRANSISTOR
Related Searches:
15-03409-00
TRANSISTOR
NSN, MFG P/N
5961004997944
NSN
5961-00-499-7944
MFG
COMPAQ FEDERAL LLC
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: PRESS FIT
POWER RATING PER CHARACTERISTIC: 310.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
2N6534D
TRANSISTOR
NSN, MFG P/N
5961004997944
NSN
5961-00-499-7944
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: PRESS FIT
POWER RATING PER CHARACTERISTIC: 310.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
1509090-01
TRANSISTOR
NSN, MFG P/N
5961004997946
NSN
5961-00-499-7946
MFG
COMPAQ FEDERAL LLC
Description
TRANSISTOR
Related Searches:
110381
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004997947
NSN
5961-00-499-7947
MFG
TDK-LAMBDA AMERICAS INC. D IV HIGH POWER DIVISION
Description
DESIGN CONTROL REFERENCE: 110381
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 89022
OVERALL HEIGHT: 8.169 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 1.062 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
THE MANUFACTURERS DATA:
Related Searches:
113126
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004997948
NSN
5961-00-499-7948
MFG
TDK-LAMBDA AMERICAS INC. D IV HIGH POWER DIVISION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.140 INCHES NOMINAL
OVERALL LENGTH: 0.300 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
3420
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004997950
NSN
5961-00-499-7950
MFG
FMC TECHNOLOGIES INC DIV MATERIAL HANDLING SOLUTIONS
Description
DESIGN CONTROL REFERENCE: 3420
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 58849
OVERALL HEIGHT: 1.343 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.687 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
THE MANUFACTURERS DATA:
Related Searches:
JAN1N3340B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004997959
NSN
5961-00-499-7959
JAN1N3340B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004997959
NSN
5961-00-499-7959
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 120.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 480.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N3340B
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-5
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/358
OVERALL DIAMETER: 0.667 INCHES MAXIMUM
OVERALL LENGTH: 1.453 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S
Related Searches:
JAN1N3340BA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004997959
NSN
5961-00-499-7959
JAN1N3340BA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004997959
NSN
5961-00-499-7959
MFG
ADELCO ELEKTRONIK GMBH
Description
CURRENT RATING PER CHARACTERISTIC: 120.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 480.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N3340B
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-5
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/358
OVERALL DIAMETER: 0.667 INCHES MAXIMUM
OVERALL LENGTH: 1.453 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S
Related Searches:
1N970
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004997969
NSN
5961-00-499-7969
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
OVERALL DIAMETER: 0.110 INCHES NOMINAL
OVERALL LENGTH: 0.300 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
1N970A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004997969
NSN
5961-00-499-7969
MFG
ADELCO ELEKTRONIK GMBH
Description
OVERALL DIAMETER: 0.110 INCHES NOMINAL
OVERALL LENGTH: 0.300 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
969021
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004997971
NSN
5961-00-499-7971
MFG
DATA PRODUCTS CORP
Description
CURRENT RATING PER CHARACTERISTIC: 60.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: D0-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.453 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
20-00702-001
TRANSISTOR
NSN, MFG P/N
5961004998960
NSN
5961-00-499-8960
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
TRANSISTOR
Related Searches:
1289929PC3
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961005000302
NSN
5961-00-500-0302
1289929PC3
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961005000302
NSN
5961-00-500-0302
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
MOUNTING METHOD: BRACKET
OVERALL HEIGHT: 0.750 INCHES NOMINAL
OVERALL LENGTH: 1.562 INCHES NOMINAL
OVERALL WIDTH: 1.562 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
Related Searches:
4JA211BC1AD1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961005000302
NSN
5961-00-500-0302
4JA211BC1AD1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961005000302
NSN
5961-00-500-0302
MFG
LOCKHEED MARTIN CORPORATION DBA MS2 DIV MS2 RADAR SYSTEMS
Description
MOUNTING METHOD: BRACKET
OVERALL HEIGHT: 0.750 INCHES NOMINAL
OVERALL LENGTH: 1.562 INCHES NOMINAL
OVERALL WIDTH: 1.562 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
