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5961-00-237-2660

20 Products

3510049-11

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002372660

NSN

5961-00-237-2660

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3510049-11

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002372660

NSN

5961-00-237-2660

MFG

COHU INC. DBA COHU ELECTRONICS DIVISION

Description

CURRENT RATING PER CHARACTERISTIC: 45.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.122 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.6 MAXIMUM NOMINAL REGULATOR VOLTAGE

562000560

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002372660

NSN

5961-00-237-2660

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562000560

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002372660

NSN

5961-00-237-2660

MFG

NORTHERN TELECOM INC NORTHEAST ELECTRONICS DIV

Description

CURRENT RATING PER CHARACTERISTIC: 45.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.122 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.6 MAXIMUM NOMINAL REGULATOR VOLTAGE

SZ5-6

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002372660

NSN

5961-00-237-2660

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SZ5-6

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002372660

NSN

5961-00-237-2660

MFG

JAPLAR GROUP INC. DBA JAPLAR SCHAUER

Description

CURRENT RATING PER CHARACTERISTIC: 45.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.122 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.6 MAXIMUM NOMINAL REGULATOR VOLTAGE

91921

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961002372674

NSN

5961-00-237-2674

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91921

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961002372674

NSN

5961-00-237-2674

MFG

COMTEC INFORMATION SYSTEMS INC DIGITRONICS DIV

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
SEMICONDUCTOR MATERIAL: SILICON

CD1133

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961002372674

NSN

5961-00-237-2674

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CD1133

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961002372674

NSN

5961-00-237-2674

MFG

MICRO USPD INC

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
SEMICONDUCTOR MATERIAL: SILICON

1N2974A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002373153

NSN

5961-00-237-3153

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1N2974A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002373153

NSN

5961-00-237-3153

MFG

FREESCALE SEMICONDUCTOR INC.

Description

DESIGN CONTROL REFERENCE: 1N2974A
MANUFACTURERS CODE: 04713
SEMICONDUCTOR MATERIAL: SILICON
THE MANUFACTURERS DATA:

40177

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002373153

NSN

5961-00-237-3153

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40177

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002373153

NSN

5961-00-237-3153

MFG

SUNAIR ELECTRONICS LLC

Description

DESIGN CONTROL REFERENCE: 1N2974A
MANUFACTURERS CODE: 04713
SEMICONDUCTOR MATERIAL: SILICON
THE MANUFACTURERS DATA:

969100

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002373153

NSN

5961-00-237-3153

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969100

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002373153

NSN

5961-00-237-3153

MFG

DATA PRODUCTS CORP

Description

DESIGN CONTROL REFERENCE: 1N2974A
MANUFACTURERS CODE: 04713
SEMICONDUCTOR MATERIAL: SILICON
THE MANUFACTURERS DATA:

1N3660

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002373157

NSN

5961-00-237-3157

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1N3660

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002373157

NSN

5961-00-237-3157

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.503 INCHES NOMINAL
OVERALL LENGTH: 0.225 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 1 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK

1N3683

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002373158

NSN

5961-00-237-3158

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1N3683

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002373158

NSN

5961-00-237-3158

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 8.50 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.128 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 750.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

1N2817

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002373161

NSN

5961-00-237-3161

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1N2817

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002373161

NSN

5961-00-237-3161

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 660.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 0.410 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.370 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 19.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

1N3027

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002373164

NSN

5961-00-237-3164

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1N3027

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002373164

NSN

5961-00-237-3164

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 12.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.225 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.350 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

1N3032A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002373165

NSN

5961-00-237-3165

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1N3032A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002373165

NSN

5961-00-237-3165

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 7.50 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.225 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.350 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 33.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

1N3314

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002373166

NSN

5961-00-237-3166

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1N3314

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002373166

NSN

5961-00-237-3166

MFG

FREESCALE SEMICONDUCTOR INC.

Description

DESIGN CONTROL REFERENCE: 1N3314
MANUFACTURERS CODE: 04713
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
THE MANUFACTURERS DATA:

2N3615

TRANSISTOR

NSN, MFG P/N

5961002373170

NSN

5961-00-237-3170

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2N3615

TRANSISTOR

NSN, MFG P/N

5961002373170

NSN

5961-00-237-3170

MFG

FREESCALE SEMICONDUCTOR INC.

Description

DESIGN CONTROL REFERENCE: 2N3615
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INTERNAL JUNCTION CONFIGURATION: PNP
MANUFACTURERS CODE: 04713
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

12095-0008

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961002373316

NSN

5961-00-237-3316

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12095-0008

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961002373316

NSN

5961-00-237-3316

MFG

HONEYWELL INTERNATIONAL INC DBA HONEYWELL

Description

COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: PHILCO CORP P/N T5500

D5910BM

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961002373316

NSN

5961-00-237-3316

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D5910BM

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961002373316

NSN

5961-00-237-3316

MFG

SKYWORKS SOLUTIONS INC.

Description

COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: PHILCO CORP P/N T5500

MA41905M

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961002373316

NSN

5961-00-237-3316

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MA41905M

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961002373316

NSN

5961-00-237-3316

MFG

M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM

Description

COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: PHILCO CORP P/N T5500

T5500

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961002373316

NSN

5961-00-237-3316

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T5500

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961002373316

NSN

5961-00-237-3316

MFG

LOCKHEED MARTIN CORPORATION DIV LOCKHEED MARTIN INTEGRATED SYSTEMS & SOLUTIONS

Description

COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: PHILCO CORP P/N T5500

013-789

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002373332

NSN

5961-00-237-3332

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013-789

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002373332

NSN

5961-00-237-3332

MFG

AMPEX SYSTEMS CORP

Description

DESIGN CONTROL REFERENCE: 013-789
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 92739
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA: