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5961-00-402-1016
20 Products
1981650-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004021016
NSN
5961-00-402-1016
MFG
HONEYWELL INTL INC DEFENSE AVIONICS SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: D0-7
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE4892 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.4 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
2495348-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004018526
NSN
5961-00-401-8526
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
559-1760-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004018526
NSN
5961-00-401-8526
559-1760-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004018526
NSN
5961-00-401-8526
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
2495349
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004018527
NSN
5961-00-401-8527
MFG
NAVAL SEA SYSTEMS COMMAND
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
2495349-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004018527
NSN
5961-00-401-8527
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
559-1763-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004018527
NSN
5961-00-401-8527
559-1763-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004018527
NSN
5961-00-401-8527
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
2495375
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004018530
NSN
5961-00-401-8530
MFG
NAVAL SEA SYSTEMS COMMAND
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
2495375-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004018530
NSN
5961-00-401-8530
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
559-1805-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004018530
NSN
5961-00-401-8530
559-1805-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004018530
NSN
5961-00-401-8530
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
2502452
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004018532
NSN
5961-00-401-8532
MFG
NAVAL SEA SYSTEMS COMMAND
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
2502452-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004018532
NSN
5961-00-401-8532
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
559-2014-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004018532
NSN
5961-00-401-8532
559-2014-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004018532
NSN
5961-00-401-8532
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
FBN-L127
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004019106
NSN
5961-00-401-9106
FBN-L127
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004019106
NSN
5961-00-401-9106
MFG
RAYTHEON COMPANY
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
OVERALL DIAMETER: 0.375 INCHES NOMINAL
OVERALL LENGTH: 0.335 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
Related Searches:
FBNL127
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004019106
NSN
5961-00-401-9106
FBNL127
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004019106
NSN
5961-00-401-9106
MFG
VEECO INSTRUMENTS INC LAMBDA DIV
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
OVERALL DIAMETER: 0.375 INCHES NOMINAL
OVERALL LENGTH: 0.335 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
Related Searches:
TD401
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004019106
NSN
5961-00-401-9106
MFG
SPRAGUE ELECTRIC CO WORLD HQS
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
OVERALL DIAMETER: 0.375 INCHES NOMINAL
OVERALL LENGTH: 0.335 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
Related Searches:
16756865-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004020015
NSN
5961-00-402-0015
16756865-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004020015
NSN
5961-00-402-0015
MFG
SYPRIS ELECTRONICS LLC
Description
CURRENT RATING PER CHARACTERISTIC: 75.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.150 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
66315-506-11
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961004020629
NSN
5961-00-402-0629
66315-506-11
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961004020629
NSN
5961-00-402-0629
MFG
BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS
Description
SEMICONDUCTOR DEVICE,THYRISTOR
Related Searches:
1015B576
INSERT,DIODE
NSN, MFG P/N
5961004020720
NSN
5961-00-402-0720
MFG
LITTON SYSTEMS INC AMECOM DIV
Description
INSERT,DIODE
Related Searches:
1N4579
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004021016
NSN
5961-00-402-1016
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: D0-7
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE4892 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.4 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
1N4579A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004021016
NSN
5961-00-402-1016
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: D0-7
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE4892 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.4 MAXIMUM NOMINAL REGULATOR VOLTAGE
