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5961-00-755-4193
20 Products
10018580-019
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007554193
NSN
5961-00-755-4193
10018580-019
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007554193
NSN
5961-00-755-4193
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 90.00 MILLIAMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
1N456
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007554193
NSN
5961-00-755-4193
MFG
GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP
Description
CURRENT RATING PER CHARACTERISTIC: 90.00 MILLIAMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
20P3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007554271
NSN
5961-00-755-4271
MFG
ST-SEMICON INC
Description
DESIGN CONTROL REFERENCE: 20P3
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 51589
OVERALL LENGTH: 0.781 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.500 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
THE MANUFACTURERS DATA:
Related Searches:
9172210
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007554271
NSN
5961-00-755-4271
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
DESIGN CONTROL REFERENCE: 20P3
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 51589
OVERALL LENGTH: 0.781 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.500 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
THE MANUFACTURERS DATA:
Related Searches:
9171632
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007554272
NSN
5961-00-755-4272
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 85.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.246 INCHES MINIMUM AND 0.250 INCHES MAXIMUM
OVERALL LENGTH: 0.620 INCHES MINIMUM AND 0.650 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 FERRULE AND 1 PIN
Related Searches:
MA424
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007554272
NSN
5961-00-755-4272
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 85.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.246 INCHES MINIMUM AND 0.250 INCHES MAXIMUM
OVERALL LENGTH: 0.620 INCHES MINIMUM AND 0.650 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 FERRULE AND 1 PIN
Related Searches:
1N625
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007554275
NSN
5961-00-755-4275
MFG
SPERRY CORP
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.105 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
9112390
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007554275
NSN
5961-00-755-4275
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.105 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
9175330
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961007554299
NSN
5961-00-755-4299
9175330
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961007554299
NSN
5961-00-755-4299
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
COMPONENT NAME AND QUANTITY: 6 SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.563 INCHES MINIMUM AND 0.750 INCHES MAXIMUM
OVERALL LENGTH: 1.306 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 1 ELECTRON TUBE BASE
Related Searches:
C50287
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961007554299
NSN
5961-00-755-4299
C50287
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961007554299
NSN
5961-00-755-4299
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
COMPONENT NAME AND QUANTITY: 6 SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.563 INCHES MINIMUM AND 0.750 INCHES MAXIMUM
OVERALL LENGTH: 1.306 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 1 ELECTRON TUBE BASE
Related Searches:
SE583
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961007554299
NSN
5961-00-755-4299
MFG
PD & E ELECTRONICS LLC
Description
COMPONENT NAME AND QUANTITY: 6 SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.563 INCHES MINIMUM AND 0.750 INCHES MAXIMUM
OVERALL LENGTH: 1.306 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 1 ELECTRON TUBE BASE
Related Searches:
SES204
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961007554299
NSN
5961-00-755-4299
SES204
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961007554299
NSN
5961-00-755-4299
MFG
SEMITRONICS CORP
Description
COMPONENT NAME AND QUANTITY: 6 SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.563 INCHES MINIMUM AND 0.750 INCHES MAXIMUM
OVERALL LENGTH: 1.306 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 1 ELECTRON TUBE BASE
Related Searches:
1N1237
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961007554319
NSN
5961-00-755-4319
1N1237
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961007554319
NSN
5961-00-755-4319
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 750.00 MILLIAMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1600.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A1 HALF-WAVE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: PLUG-IN
OVERALL LENGTH: 3.219 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN
Related Searches:
8998056
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961007554319
NSN
5961-00-755-4319
8998056
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961007554319
NSN
5961-00-755-4319
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 750.00 MILLIAMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1600.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A1 HALF-WAVE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: PLUG-IN
OVERALL LENGTH: 3.219 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN
Related Searches:
S5017
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961007554319
NSN
5961-00-755-4319
S5017
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961007554319
NSN
5961-00-755-4319
MFG
ST-SEMICON INC
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 750.00 MILLIAMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1600.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A1 HALF-WAVE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: PLUG-IN
OVERALL LENGTH: 3.219 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN
Related Searches:
11-10836-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007554346
NSN
5961-00-755-4346
11-10836-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007554346
NSN
5961-00-755-4346
MFG
COMPAQ FEDERAL LLC
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.150 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
1N759A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007554346
NSN
5961-00-755-4346
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.150 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
1N759AA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007554346
NSN
5961-00-755-4346
MFG
ADELCO ELEKTRONIK GMBH
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.150 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
351-3025-170
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007554346
NSN
5961-00-755-4346
351-3025-170
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007554346
NSN
5961-00-755-4346
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.150 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
4178600-255
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007554346
NSN
5961-00-755-4346
4178600-255
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007554346
NSN
5961-00-755-4346
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.150 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
