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5961-00-461-3043
20 Products
1N5054
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004613043
NSN
5961-00-461-3043
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 1.50 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 170.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 5.3 MILLIMETERS MAXIMUM
OVERALL LENGTH: 9.5 MILLIMETERS NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.9 MILLIMETERS MAXIMUM
TERMINAL LENGTH: 38.1 MILLIMETERS MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 NOMINAL REVERSE VOLTAGE, PEAK
Related Searches:
1N2806
TRANSISTOR
NSN, MFG P/N
5961004613021
NSN
5961-00-461-3021
MFG
FREESCALE SEMICONDUCTOR INC.
Description
TRANSISTOR
Related Searches:
1N2972
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004613022
NSN
5961-00-461-3022
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 305.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.437 INCHES MAXIMUM
OVERALL LENGTH: 0.405 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 8.2 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
1N3346A
SEMICONDUCTOR DEVIC
NSN, MFG P/N
5961004613023
NSN
5961-00-461-3023
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
SEMICONDUCTOR DEVIC
Related Searches:
2N1390
SEMICONDUCTOR DEVIC
NSN, MFG P/N
5961004613024
NSN
5961-00-461-3024
MFG
ELECTRONIC TRANSISTORS CORP
Description
SEMICONDUCTOR DEVIC
Related Searches:
2N1591
TRANSISTOR
NSN, MFG P/N
5961004613027
NSN
5961-00-461-3027
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
CURRENT RATING PER CHARACTERISTIC: 25.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.405 INCHES MAXIMUM
OVERALL LENGTH: 0.310 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 125.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 25.0 MAXIMUM SMALL-SIGNAL SHORT-CIRCUIT FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 1.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
2N1999
TRANSISTOR
NSN, MFG P/N
5961004613031
NSN
5961-00-461-3031
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 100.0 MAXIMUM SMALL-SIGNAL SHORT-CIRCUIT FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 15.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 20.0 MAXIMU
Related Searches:
2N3589
SEMICONDUCTOR DEVIC
NSN, MFG P/N
5961004613032
NSN
5961-00-461-3032
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
SEMICONDUCTOR DEVIC
Related Searches:
1N4819
SEMICONDUCTOR DEVIC
NSN, MFG P/N
5961004613034
NSN
5961-00-461-3034
MFG
WESTINGHOUSE ELECTRIC CORP SEMICONDUCTOR DIV
Description
SEMICONDUCTOR DEVIC
Related Searches:
1N4821
SEMICONDUCTOR DEVIC
NSN, MFG P/N
5961004613042
NSN
5961-00-461-3042
MFG
WESTINGHOUSE ELECTRIC CORP SEMICONDUCTOR DIV
Description
SEMICONDUCTOR DEVIC
Related Searches:
384-0368-000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004613043
NSN
5961-00-461-3043
384-0368-000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004613043
NSN
5961-00-461-3043
MFG
HARRIS CORPORATION DBA HARRIS BROADCAST TRANSMISSION DIVISION DIV BROADCAST COMMUNICATIONS DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 1.50 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 170.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 5.3 MILLIMETERS MAXIMUM
OVERALL LENGTH: 9.5 MILLIMETERS NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.9 MILLIMETERS MAXIMUM
TERMINAL LENGTH: 38.1 MILLIMETERS MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 NOMINAL REVERSE VOLTAGE, PEAK
Related Searches:
1N4038B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004613083
NSN
5961-00-461-3083
MFG
COMPONENTS INC SEMCOR DIV
Description
DESIGN CONTROL REFERENCE: 1N4038B
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 06751
OVERALL DIAMETER: 0.234 INCHES MINIMUM AND 0.265 INCHES MAXIMUM
OVERALL HEIGHT: 0.285 INCHES MINIMUM AND 0.313 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THE MANUFACTURERS DATA:
Related Searches:
5800669-5261-000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004613083
NSN
5961-00-461-3083
5800669-5261-000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004613083
NSN
5961-00-461-3083
MFG
THALES DEFENCE DEUTSCHLAND GMBH
Description
DESIGN CONTROL REFERENCE: 1N4038B
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 06751
OVERALL DIAMETER: 0.234 INCHES MINIMUM AND 0.265 INCHES MAXIMUM
OVERALL HEIGHT: 0.285 INCHES MINIMUM AND 0.313 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THE MANUFACTURERS DATA:
Related Searches:
1N4040B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004613086
NSN
5961-00-461-3086
MFG
GENERAL SEMICONDUCTOR INDUSTRIES INC
Description
DESIGN CONTROL REFERENCE: 1N4040B
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 24444
OVERALL DIAMETER: 0.234 INCHES MINIMUM AND 0.265 INCHES MAXIMUM
OVERALL HEIGHT: 0.285 INCHES MINIMUM AND 0.313 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THE MANUFACTURERS DATA:
Related Searches:
5800669-5262-000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004613086
NSN
5961-00-461-3086
5800669-5262-000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004613086
NSN
5961-00-461-3086
MFG
THALES DEFENCE DEUTSCHLAND GMBH
Description
DESIGN CONTROL REFERENCE: 1N4040B
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 24444
OVERALL DIAMETER: 0.234 INCHES MINIMUM AND 0.265 INCHES MAXIMUM
OVERALL HEIGHT: 0.285 INCHES MINIMUM AND 0.313 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THE MANUFACTURERS DATA:
Related Searches:
1N4042B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004613087
NSN
5961-00-461-3087
MFG
GENERAL SEMICONDUCTOR INDUSTRIES INC
Description
DESIGN CONTROL REFERENCE: 1N4042B
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 24444
OVERALL DIAMETER: 0.234 INCHES MINIMUM AND 0.265 INCHES MAXIMUM
OVERALL HEIGHT: 0.285 INCHES MINIMUM AND 0.313 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THE MANUFACTURERS DATA:
Related Searches:
5800669-5263-000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004613087
NSN
5961-00-461-3087
5800669-5263-000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004613087
NSN
5961-00-461-3087
MFG
THALES DEFENCE DEUTSCHLAND GMBH
Description
DESIGN CONTROL REFERENCE: 1N4042B
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 24444
OVERALL DIAMETER: 0.234 INCHES MINIMUM AND 0.265 INCHES MAXIMUM
OVERALL HEIGHT: 0.285 INCHES MINIMUM AND 0.313 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THE MANUFACTURERS DATA:
Related Searches:
3477-0001-01
HOLDER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961004613192
NSN
5961-00-461-3192
3477-0001-01
HOLDER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961004613192
NSN
5961-00-461-3192
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV MULTIPLE
Description
ACCOMMODATED EQUIPMENT IDENTIFYING NUMBER: 1N1132 TYPE NO.
DESIGN CONTROL REFERENCE: 3477-0001-01
MANUFACTURERS CODE: 26916
OVERALL LENGTH: 2.312 INCHES NOMINAL
OVERALL WIDTH: 1.688 INCHES NOMINAL
THE MANUFACTURERS DATA:
Related Searches:
730-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004613196
NSN
5961-00-461-3196
MFG
FREESCALE SEMICONDUCTOR INC.
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 90536
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 7902181-00
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.092 INCHES MINIMUM AND 0.104 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
7902181-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004613196
NSN
5961-00-461-3196
7902181-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004613196
NSN
5961-00-461-3196
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 90536
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 7902181-00
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.092 INCHES MINIMUM AND 0.104 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
