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5961-01-120-4026
20 Products
438475-01
DIODE-RESISTOR,SET
NSN, MFG P/N
5961011204026
NSN
5961-01-120-4026
MFG
BAE SYSTEMS CONTROLS INC
Description
DESIGN CONTROL REFERENCE: 438475-01
GENERAL CHARACTERISTICS ITEM DESCRIPTION: C/0 1 DIODE,438243-01;1 RESISTOR,134752-146,ORRTH42ES272J,134752-158,ORRTH42ES332J,134752-134,OR RTH42ES392J,FROM P/L 438475-01
MANUFACTURERS CODE: 07690
THE MANUFACTURERS DATA:
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2N6259
TRANSISTOR
NSN, MFG P/N
5961011203503
NSN
5961-01-120-3503
MFG
U S ARMY TANK AUTOMOTIVE COMMAND AMSTA-IM-MM
Description
TRANSISTOR
Related Searches:
JAN1N5620
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011203935
NSN
5961-01-120-3935
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 30.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N5620
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: F16MAINTNTRNG 81755 FSCM
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/427
OVERALL DIAMETER: 0.065 INCHES MINIMUM AND 0.110 INCHES MAXIMUM
OVERALL LENGTH: 0.130 INCHES MINIMUM AND 0.225 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/427 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.250 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE R
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D42C3
TRANSISTOR
NSN, MFG P/N
5961011204467
NSN
5961-01-120-4467
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: 4920-01-046-9910 88818 FSCM
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.050 INCHES MINIMUM AND 0.060 INCHES MAXIMUM
OVERALL LENGTH: 0.360 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
OVERALL WIDTH: 0.285 INCHES MINIMUM AND 0.315 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.1 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
JANTX2N6603
TRANSISTOR
NSN, MFG P/N
5961011205205
NSN
5961-01-120-5205
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N6603
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: 1425-01-066-7775
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/522
OVERALL DIAMETER: 0.105 INCHES MAXIMUM
OVERALL LENGTH: 0.105 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/522 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 4 RIBBON
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM COLLE
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22283
TRANSISTOR
NSN, MFG P/N
5961011205994
NSN
5961-01-120-5994
MFG
SMITHS AEROSPACE INC. ELECTRONIC SYSTEMS-GRAND RAPIDS
Description
TRANSISTOR
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167-420
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011205995
NSN
5961-01-120-5995
MFG
AUTEK SYSTEMS CORP
Description
SEMICONDUCTOR DEVICE,DIODE
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JANTX1N3312B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011206201
NSN
5961-01-120-6201
JANTX1N3312B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011206201
NSN
5961-01-120-6201
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 3750.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N3312B
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/358
OVERALL DIAMETER: 0.375 INCHES MAXIMUM
OVERALL LENGTH: 1.000 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.687 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 81349-MIL-S-19500/358 SPECIFICATION
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 13.7 MAXIMUM BREAKDOWN VOLTAGE, DC
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12032-0011
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011206585
NSN
5961-01-120-6585
12032-0011
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011206585
NSN
5961-01-120-6585
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL
Description
III PART NAME ASSIGNED BY CONTROLLING AGENCY: VOLTAGE, VARIABLE CAP DIODE
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2088800-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011206585
NSN
5961-01-120-6585
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
III PART NAME ASSIGNED BY CONTROLLING AGENCY: VOLTAGE, VARIABLE CAP DIODE
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497337
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011206899
NSN
5961-01-120-6899
MFG
THALES COMMUNICATIONS S.A.
Description
SEMICONDUCTOR DEVICE,DIODE
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GC2532-15
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011206899
NSN
5961-01-120-6899
MFG
MICROWAVE DIODE CORP
Description
SEMICONDUCTOR DEVICE,DIODE
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68-4874
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011206914
NSN
5961-01-120-6914
68-4874
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011206914
NSN
5961-01-120-6914
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
SEMICONDUCTOR DEVICE,THYRISTOR
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719199-29
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011206914
NSN
5961-01-120-6914
719199-29
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011206914
NSN
5961-01-120-6914
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
SEMICONDUCTOR DEVICE,THYRISTOR
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1244801
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011207175
NSN
5961-01-120-7175
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN MS2
Description
CURRENT RATING PER CHARACTERISTIC: 150.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 720.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 600.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
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5475569
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011207175
NSN
5961-01-120-7175
MFG
NAVAL SEA SYSTEMS COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 150.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 720.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 600.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
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KCII/1026
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011207175
NSN
5961-01-120-7175
MFG
KOEHLKE COMPONENTS INC
Description
CURRENT RATING PER CHARACTERISTIC: 150.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 720.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 600.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
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63C502527G1
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011207200
NSN
5961-01-120-7200
63C502527G1
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011207200
NSN
5961-01-120-7200
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN SIMULATION TRAINING & SUPPORT
Description
DESIGN CONTROL REFERENCE: 63C502527G1
MAJOR COMPONENTS: SEMICONDUCTOR DEVICE,DIODE 10; TERMINALS 20; TERMINAL BOARD 1
MANUFACTURERS CODE: 16331
MOUNTING CONFIGURATION: FOUR 0.177 IN. DIA. MOUNTING HOLES
OVERALL LENGTH: 3.870 INCHES MINIMUM AND 3.930 INCHES MAXIMUM
OVERALL WIDTH: 1.470 INCHES MINIMUM AND 1.530 INCHES MAXIMUM
THE MANUFACTURERS DATA:
Related Searches:
63C502527G2
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011207201
NSN
5961-01-120-7201
63C502527G2
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011207201
NSN
5961-01-120-7201
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN SIMULATION TRAINING & SUPPORT
Description
DESIGN CONTROL REFERENCE: 63C502527G2
MAJOR COMPONENTS: SEMICONDUCTOR DEVICE,DIODE 12; TERMINALS 24; TERMINAL BOARD 1
MANUFACTURERS CODE: 16331
MOUNTING CONFIGURATION: FOUR 0.177 IN. DIA. MOUNTING HOLES
OVERALL LENGTH: 4.470 INCHES MINIMUM AND 4.530 INCHES MAXIMUM
OVERALL WIDTH: 1.500 INCHES NOMINAL
THE MANUFACTURERS DATA:
Related Searches:
63C502527G3
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011207202
NSN
5961-01-120-7202
63C502527G3
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011207202
NSN
5961-01-120-7202
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN SIMULATION TRAINING & SUPPORT
Description
DESIGN CONTROL REFERENCE: 63C502527G3
MAJOR COMPONENTS: SEMICONDUCTOR DEVICE,DIODE 30; TERMINALS 60; TERMINAL BOARD 1
MANUFACTURERS CODE: 16331
MOUNTING CONFIGURATION: SIX 0.177 IN. DIA. MOUNTING HOLES
OVERALL LENGTH: 7.970 INCHES MINIMUM AND 8.030 INCHES MAXIMUM
OVERALL WIDTH: 2.970 INCHES MINIMUM AND 3.030 INCHES MAXIMUM
THE MANUFACTURERS DATA:
