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5961-01-212-9881
20 Products
43855
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012129881
NSN
5961-01-212-9881
MFG
TELAIR INTERNATIONAL INCORPORATED DBA NORDISK AVIATION SERVICES
Description
SEMICONDUCTOR DEVICE ASSEMBLY
Related Searches:
M235A721-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012128070
NSN
5961-01-212-8070
M235A721-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012128070
NSN
5961-01-212-8070
MFG
TELEPHONICS CORPORATION DBA COMMUNICATIONS SYSTEMS DIVISION DIV COMMUNICATIONS SYSTEMS DIVISION
Description
COMPONENT NAME AND QUANTITY: 13 SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.185 INCHES MAXIMUM
OVERALL LENGTH: 0.785 INCHES MAXIMUM
OVERALL WIDTH: 0.310 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 350.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: COMMON CATHODE; ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL LENGTH: 0.250 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 14 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
JAN1N914B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012128726
NSN
5961-01-212-8726
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N914B
MANUFACTURERS CODE: 81349
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: USED ON APPACHE
Related Searches:
380-10270-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012129326
NSN
5961-01-212-9326
380-10270-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012129326
NSN
5961-01-212-9326
MFG
THE BOEING COMPANY DBA BOEING
Description
CAPACITANCE RATING IN PICOFARADS: 10.0 NOMINAL
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: D0-7
MANUFACTURERS CODE: 82918
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 380-10270-1
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
MV1866
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012129326
NSN
5961-01-212-9326
MFG
MSI ELECTRONICS INC
Description
CAPACITANCE RATING IN PICOFARADS: 10.0 NOMINAL
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: D0-7
MANUFACTURERS CODE: 82918
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 380-10270-1
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
380-10270-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012129327
NSN
5961-01-212-9327
380-10270-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012129327
NSN
5961-01-212-9327
MFG
THE BOEING COMPANY DBA BOEING
Description
FUNCTION FOR WHICH DESIGNED: VOLTAGE VARIABLE CAPACITOR
III END ITEM IDENTIFICATION: UHF LINE OF SIGHT COMM
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 82918
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 380-10270-2
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 82918-380-10270 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MINIMUM BREAKDOWN VOLTAGE, DC
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MV1878
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012129327
NSN
5961-01-212-9327
MFG
FREESCALE SEMICONDUCTOR INC.
Description
FUNCTION FOR WHICH DESIGNED: VOLTAGE VARIABLE CAPACITOR
III END ITEM IDENTIFICATION: UHF LINE OF SIGHT COMM
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 82918
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 380-10270-2
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 82918-380-10270 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MINIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
380-10003-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012129328
NSN
5961-01-212-9328
380-10003-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012129328
NSN
5961-01-212-9328
MFG
THE BOEING COMPANY DBA BOEING
Description
CAPACITANCE RATING IN PICOFARADS: 96.0 MINIMUM AND 144.0 MAXIMUM
FUNCTION FOR WHICH DESIGNED: VOLTAGE VARIABLE CAPACITOR
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 82918
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 380-10003-1
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 82918-380-10003 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
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MV1404H
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012129328
NSN
5961-01-212-9328
MFG
MSI ELECTRONICS INC
Description
CAPACITANCE RATING IN PICOFARADS: 96.0 MINIMUM AND 144.0 MAXIMUM
FUNCTION FOR WHICH DESIGNED: VOLTAGE VARIABLE CAPACITOR
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 82918
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 380-10003-1
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 82918-380-10003 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
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2N5682
TRANSISTOR
NSN, MFG P/N
5961012129758
NSN
5961-01-212-9758
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 120.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 4.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC AND 120.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STAT
Related Searches:
B4012810
TRANSISTOR
NSN, MFG P/N
5961012129758
NSN
5961-01-212-9758
MFG
DEPARTMENT OF THE ARMY HQ UNITED STATES ARMY COMMUNICATIONS RESEARCH AND DEVELOPMENT COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 120.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 4.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC AND 120.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STAT
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418707
TRANSISTOR
NSN, MFG P/N
5961012129759
NSN
5961-01-212-9759
MFG
FLUKE CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 600.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 135.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
OVERALL WIDTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 800.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 25.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 4.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
Related Searches:
MPS6562
TRANSISTOR
NSN, MFG P/N
5961012129759
NSN
5961-01-212-9759
MFG
TELCOM SEMICONDUCTOR INC
Description
CURRENT RATING PER CHARACTERISTIC: 600.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 135.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
OVERALL WIDTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 800.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 25.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 4.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
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SA6299
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012129917
NSN
5961-01-212-9917
SA6299
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012129917
NSN
5961-01-212-9917
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
III END ITEM IDENTIFICATION: COMPUTER SYMBOL GENERATOR
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343-0969-00
RETAINER,TRANSISTOR
NSN, MFG P/N
5961012130250
NSN
5961-01-213-0250
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
RETAINER,TRANSISTOR
Related Searches:
343-1025-00
RETAINER,TRANSISTOR
NSN, MFG P/N
5961012130251
NSN
5961-01-213-0251
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
RETAINER,TRANSISTOR
Related Searches:
28452-167U
TRANSISTOR
NSN, MFG P/N
5961012130257
NSN
5961-01-213-0257
MFG
MARCONI ELECTRONICS INC MARCONI INSTRUMENTS DIV
Description
TRANSISTOR
Related Searches:
28452/167
TRANSISTOR
NSN, MFG P/N
5961012130257
NSN
5961-01-213-0257
MFG
AEROFLEX WICHITA INC.
Description
TRANSISTOR
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3FR90
TRANSISTOR
NSN, MFG P/N
5961012130257
NSN
5961-01-213-0257
MFG
VISHAY
Description
TRANSISTOR
Related Searches:
44529-038C
TRANSISTOR
NSN, MFG P/N
5961012130258
NSN
5961-01-213-0258
MFG
MARCONI ELECTRONICS INC MARCONI INSTRUMENTS DIV
Description
TRANSISTOR
