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5961-01-065-8074
20 Products
480980-2
TRANSISTOR
NSN, MFG P/N
5961010658074
NSN
5961-01-065-8074
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.090 INCHES MINIMUM AND 0.110 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 49956-480980 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 15.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 3.0 MAXIMUM EMITTER
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AT25BS1, MODEL ST6-0774
TRANSISTOR
NSN, MFG P/N
5961010658074
NSN
5961-01-065-8074
MFG
AGILENT TECHNOLOGIES INC. DIV SEMICONDUCTOR PRODUCTS GROUP BUSINESS CENTER
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.090 INCHES MINIMUM AND 0.110 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 49956-480980 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 15.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 3.0 MAXIMUM EMITTER
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
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NSN
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MFG
FREESCALE SEMICONDUCTOR INC.
Description
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.077 INCHES MINIMUM AND 0.087 INCHES MAXIMUM
OVERALL LENGTH: 0.070 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 CASE AND 1 FERRULE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM REVERSE VOLTAGE, PEAK
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1N3324B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
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MFG
JOINT ARMY-NAVY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 0.42 AMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 1.59 AMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N3324B
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/358
OVERALL DIAMETER: 0.667 INCHES MAXIMUM
OVERALL LENGTH: 1.453 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/358/EL/ GOVERNMENT SPECIFICATION
TERMIN
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294-990121-360
SEMICONDUCTOR DEVICE,DIODE
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010658077
NSN
5961-01-065-8077
MFG
CMC ELECTRONICS INC
Description
CURRENT RATING PER CHARACTERISTIC: 0.42 AMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 1.59 AMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N3324B
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/358
OVERALL DIAMETER: 0.667 INCHES MAXIMUM
OVERALL LENGTH: 1.453 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/358/EL/ GOVERNMENT SPECIFICATION
TERMIN
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010658077
NSN
5961-01-065-8077
MFG
SUNDSTRAND CORP ELECTRIC POWER SYSTEMS DIV
Description
CURRENT RATING PER CHARACTERISTIC: 0.42 AMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 1.59 AMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N3324B
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/358
OVERALL DIAMETER: 0.667 INCHES MAXIMUM
OVERALL LENGTH: 1.453 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/358/EL/ GOVERNMENT SPECIFICATION
TERMIN
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010658077
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5961-01-065-8077
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010658077
NSN
5961-01-065-8077
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 0.42 AMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 1.59 AMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N3324B
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/358
OVERALL DIAMETER: 0.667 INCHES MAXIMUM
OVERALL LENGTH: 1.453 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/358/EL/ GOVERNMENT SPECIFICATION
TERMIN
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5961-01-065-8080
MFG
SQUARE D CO EPE/TOPAZ
Description
CURRENT RATING PER CHARACTERISTIC: 110.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.500 INCHES
OVERALL DIAMETER: 0.840 INCHES MINIMUM AND 0.910 INCHES MAXIMUM
OVERALL LENGTH: 0.874 INCHES MINIMUM AND 1.030 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM AVERAGE GATE POWER-FORWARD
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE AND 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 720.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE
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SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010658080
NSN
5961-01-065-8080
MFG
POWEREX INC
Description
CURRENT RATING PER CHARACTERISTIC: 110.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.500 INCHES
OVERALL DIAMETER: 0.840 INCHES MINIMUM AND 0.910 INCHES MAXIMUM
OVERALL LENGTH: 0.874 INCHES MINIMUM AND 1.030 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM AVERAGE GATE POWER-FORWARD
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE AND 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 720.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE
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SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010658080
NSN
5961-01-065-8080
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
CURRENT RATING PER CHARACTERISTIC: 110.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.500 INCHES
OVERALL DIAMETER: 0.840 INCHES MINIMUM AND 0.910 INCHES MAXIMUM
OVERALL LENGTH: 0.874 INCHES MINIMUM AND 1.030 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM AVERAGE GATE POWER-FORWARD
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE AND 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 720.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE
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5961010658080
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SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010658080
NSN
5961-01-065-8080
MFG
SEMIKRON INTL INC
Description
CURRENT RATING PER CHARACTERISTIC: 110.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.500 INCHES
OVERALL DIAMETER: 0.840 INCHES MINIMUM AND 0.910 INCHES MAXIMUM
OVERALL LENGTH: 0.874 INCHES MINIMUM AND 1.030 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM AVERAGE GATE POWER-FORWARD
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE AND 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 720.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE
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SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010658080
NSN
5961-01-065-8080
MFG
WESTINGHOUSE ELECTRIC CORP SEMICONDUCTOR DIV
Description
CURRENT RATING PER CHARACTERISTIC: 110.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.500 INCHES
OVERALL DIAMETER: 0.840 INCHES MINIMUM AND 0.910 INCHES MAXIMUM
OVERALL LENGTH: 0.874 INCHES MINIMUM AND 1.030 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM AVERAGE GATE POWER-FORWARD
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE AND 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 720.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE
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RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
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5961-01-065-8304
MFG
BELL HELICOPTER TEXTRON INC.
Description
STYLE DESIGNATOR: 88B RIGHT ANGLE, HOLE MOUNTED
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NSN, MFG P/N
5961010658451
NSN
5961-01-065-8451
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM BASE CURRENT, DC AND 4.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.100 INCHES NOMINAL
OVERALL LENGTH: 0.440 INCHES NOMINAL
OVERALL WIDTH: 0.300 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 7.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
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FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM BASE CURRENT, DC AND 4.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.100 INCHES NOMINAL
OVERALL LENGTH: 0.440 INCHES NOMINAL
OVERALL WIDTH: 0.300 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 7.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
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MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 1.900 INCHES NOMINAL
OVERALL LENGTH: 0.780 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5000.0 MAXIMUM REVERSE VOLTAGE, PEAK
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RTP CORP.
Description
SEMICONDUCTOR MATERIAL: SILICON
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TECCOR ELECTRONICS INC SEMICONDUCTOR DIV SUB OF RANCO
Description
SEMICONDUCTOR MATERIAL: SILICON
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NORTHROP GRUMMAN SYSTEMS CORPORATION DIV MULTIPLE
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 600.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 30.0 MAXIMUM COLLECTOR TO EMITTER SATURATION VOLTAGE AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, INSTANTANEOU
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MFG
FREESCALE SEMICONDUCTOR INC.
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 600.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 30.0 MAXIMUM COLLECTOR TO EMITTER SATURATION VOLTAGE AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, INSTANTANEOU
