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5961-01-167-0059
20 Products
43A329-6
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011670059
NSN
5961-01-167-0059
43A329-6
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011670059
NSN
5961-01-167-0059
MFG
GENERAL ELECTRIC CO OUTDOOR BREAKER BUSINESS SECTION
Description
SEMICONDUCTOR DEVICE,THYRISTOR
Related Searches:
JAN-TXV1N753A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011668991
NSN
5961-01-166-8991
JAN-TXV1N753A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011668991
NSN
5961-01-166-8991
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 65.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N753A-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TXV
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/127
OVERALL DIAMETER: 0.055 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/127 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DA
Related Searches:
43A334-6
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011670060
NSN
5961-01-167-0060
43A334-6
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011670060
NSN
5961-01-167-0060
MFG
POWER PARAGON INC DBA POWER SYSTEMS GROUP DIV POWER SYSTEMS GROUP
Description
CURRENT RATING PER CHARACTERISTIC: 260.00 AMPERES MAXIMUM ON-STATE CURRENT, INSTANTANEOUS AND 17.00 MILLIAMPERES MAXIMUM PEAK REPETITIVE OFF-STATE CURRENT
INCLOSURE MATERIAL: METAL AND CERAMIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-200AB
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: COMPRESSION
OVERALL DIAMETER: 36.07 MILLIMETERS MINIMUM AND 43.18 MILLIMETERS MAXIMUM
OVERALL LENGTH: 12.45 MILLIMETERS MINIMUM AND 15.24 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 CASE AND 1 QUICK DISCONNECT, MALE AND 1 SOLDER STUD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MINIMUM REPETITIVE PEAK OFF-STATE VOLTAGE AND 3.0 MAXIMUM GATE TRIGGER VOLTAGE, INSTANTANEOUS
Related Searches:
C365M
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011670060
NSN
5961-01-167-0060
MFG
POWEREX INC
Description
CURRENT RATING PER CHARACTERISTIC: 260.00 AMPERES MAXIMUM ON-STATE CURRENT, INSTANTANEOUS AND 17.00 MILLIAMPERES MAXIMUM PEAK REPETITIVE OFF-STATE CURRENT
INCLOSURE MATERIAL: METAL AND CERAMIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-200AB
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: COMPRESSION
OVERALL DIAMETER: 36.07 MILLIMETERS MINIMUM AND 43.18 MILLIMETERS MAXIMUM
OVERALL LENGTH: 12.45 MILLIMETERS MINIMUM AND 15.24 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 CASE AND 1 QUICK DISCONNECT, MALE AND 1 SOLDER STUD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MINIMUM REPETITIVE PEAK OFF-STATE VOLTAGE AND 3.0 MAXIMUM GATE TRIGGER VOLTAGE, INSTANTANEOUS
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13155905-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011671420
NSN
5961-01-167-1420
13155905-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011671420
NSN
5961-01-167-1420
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
SEMICONDUCTOR DEVICE,DIODE
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UES805
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011671420
NSN
5961-01-167-1420
MFG
MICRO USPD INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1N5872B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011671545
NSN
5961-01-167-1545
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 4.20 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 13.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N972B-1
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/117
OVERALL DIAMETER: 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0_
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011671545
NSN
5961-01-167-1545
MFG
TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES
Description
CURRENT RATING PER CHARACTERISTIC: 4.20 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 13.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N972B-1
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/117
OVERALL DIAMETER: 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0_
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1N972
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011671545
NSN
5961-01-167-1545
MFG
JOINT ARMY-NAVY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 4.20 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 13.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N972B-1
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/117
OVERALL DIAMETER: 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0_
Related Searches:
1N972B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011671545
NSN
5961-01-167-1545
MFG
AAI/ACL TECHNOLOGIES INC IM AND C DIV
Description
CURRENT RATING PER CHARACTERISTIC: 4.20 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 13.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N972B-1
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/117
OVERALL DIAMETER: 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0_
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386-0220-000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011671545
NSN
5961-01-167-1545
386-0220-000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011671545
NSN
5961-01-167-1545
MFG
HARRIS CORPORATION DBA HARRIS BROADCAST TRANSMISSION DIVISION DIV BROADCAST COMMUNICATIONS DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 4.20 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 13.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N972B-1
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/117
OVERALL DIAMETER: 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0_
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418036-135
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011671545
NSN
5961-01-167-1545
418036-135
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011671545
NSN
5961-01-167-1545
MFG
RAYTHEON COMPANY
Description
CURRENT RATING PER CHARACTERISTIC: 4.20 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 13.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N972B-1
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/117
OVERALL DIAMETER: 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0_
Related Searches:
5042-445
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011671545
NSN
5961-01-167-1545
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 4.20 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 13.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N972B-1
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/117
OVERALL DIAMETER: 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0_
Related Searches:
917AS700-42
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011671545
NSN
5961-01-167-1545
917AS700-42
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011671545
NSN
5961-01-167-1545
MFG
NAVAL AIR SYSTEMS COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 4.20 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 13.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N972B-1
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/117
OVERALL DIAMETER: 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0_
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CR122-37
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011671545
NSN
5961-01-167-1545
MFG
ELDEC CORPORATION DBA CRANE AEROSPACE & ELECTRONIC
Description
CURRENT RATING PER CHARACTERISTIC: 4.20 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 13.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N972B-1
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/117
OVERALL DIAMETER: 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0_
Related Searches:
IN972B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011671545
NSN
5961-01-167-1545
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 4.20 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 13.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N972B-1
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/117
OVERALL DIAMETER: 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0_
Related Searches:
RELEASE6447
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011671545
NSN
5961-01-167-1545
RELEASE6447
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011671545
NSN
5961-01-167-1545
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 4.20 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 13.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N972B-1
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/117
OVERALL DIAMETER: 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0_
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48544186-004
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011672015
NSN
5961-01-167-2015
48544186-004
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011672015
NSN
5961-01-167-2015
MFG
BAE SYSTEMS HAGGLUNDS AB
Description
SEMICONDUCTOR DEVICE,DIODE
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70-0393-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011672015
NSN
5961-01-167-2015
MFG
ALFA AB INGENJOERSFIRMA
Description
SEMICONDUCTOR DEVICE,DIODE
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011672015
NSN
5961-01-167-2015
MFG
U.S. DEFENSE SERVICES INC. DBA USDS
Description
SEMICONDUCTOR DEVICE,DIODE
