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5961-00-608-5803
20 Products
1N358
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006085803
NSN
5961-00-608-5803
MFG
GENERAL DYNAMICS C4 SYSTEMS INC.
Description
DESIGN CONTROL REFERENCE: 1N358
MANUFACTURERS CODE: 04655
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 CONNECTOR, COAXIAL
THE MANUFACTURERS DATA:
Related Searches:
21-641
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006085803
NSN
5961-00-608-5803
MFG
NEUROTECH CORP CONTROL ELECTRONICS DIV
Description
DESIGN CONTROL REFERENCE: 1N358
MANUFACTURERS CODE: 04655
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 CONNECTOR, COAXIAL
THE MANUFACTURERS DATA:
Related Searches:
A3
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5961006087033
NSN
5961-00-608-7033
MFG
INTERNATIONAL RECTIFIER CORPORATION
Description
III END ITEM IDENTIFICATION: FMS - BUILD FRIGATES CLASS SHIPS
Related Searches:
RX10B
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5961006087033
NSN
5961-00-608-7033
MFG
EG AND G VACTEC INC
Description
III END ITEM IDENTIFICATION: FMS - BUILD FRIGATES CLASS SHIPS
Related Searches:
966-002-10
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961006090464
NSN
5961-00-609-0464
966-002-10
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961006090464
NSN
5961-00-609-0464
MFG
EMERSON ELECTRIC CO DORIC SCIENTIFIC DIV
Description
CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 110.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.105 INCHES MAXIMUM
OVERALL LENGTH: 0.435 INCHES MAXIMUM
OVERALL WIDTH: 0.305 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.5 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
DMS 87127B
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961006090464
NSN
5961-00-609-0464
DMS 87127B
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961006090464
NSN
5961-00-609-0464
MFG
DLA LAND AND MARITIME
Description
CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 110.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.105 INCHES MAXIMUM
OVERALL LENGTH: 0.435 INCHES MAXIMUM
OVERALL WIDTH: 0.305 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.5 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
MCR-406-1
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961006090464
NSN
5961-00-609-0464
MCR-406-1
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961006090464
NSN
5961-00-609-0464
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 110.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.105 INCHES MAXIMUM
OVERALL LENGTH: 0.435 INCHES MAXIMUM
OVERALL WIDTH: 0.305 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.5 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
1R122F
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961006090494
NSN
5961-00-609-0494
1R122F
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961006090494
NSN
5961-00-609-0494
MFG
INTERNATIONAL RECTIFIER CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 8.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220AB
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.625 INCHES MAXIMUM
OVERALL WIDTH: 0.420 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 20.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL LENGTH: 0.562 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.6 MAXIMUM ON-STATE VOLTAGE, PEAK
Related Searches:
S0508L
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961006090494
NSN
5961-00-609-0494
S0508L
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961006090494
NSN
5961-00-609-0494
MFG
TECCOR ELECTRONICS INC SEMICONDUCTOR DIV SUB OF RANCO
Description
CURRENT RATING PER CHARACTERISTIC: 8.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220AB
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.625 INCHES MAXIMUM
OVERALL WIDTH: 0.420 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 20.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL LENGTH: 0.562 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.6 MAXIMUM ON-STATE VOLTAGE, PEAK
Related Searches:
246232-0001
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961006090679
NSN
5961-00-609-0679
246232-0001
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961006090679
NSN
5961-00-609-0679
MFG
THALES ATM INC.
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 3 DOUBLER 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL DIAMETER: 2.000 INCHES MAXIMUM
OVERALL HEIGHT: 0.500 INCHES MAXIMUM
OVERALL LENGTH: 0.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
Related Searches:
SCDA05
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961006090679
NSN
5961-00-609-0679
SCDA05
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961006090679
NSN
5961-00-609-0679
MFG
SEMTECH CORPORATION
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 3 DOUBLER 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL DIAMETER: 2.000 INCHES MAXIMUM
OVERALL HEIGHT: 0.500 INCHES MAXIMUM
OVERALL LENGTH: 0.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
Related Searches:
SCDAR2
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961006090679
NSN
5961-00-609-0679
SCDAR2
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961006090679
NSN
5961-00-609-0679
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 3 DOUBLER 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL DIAMETER: 2.000 INCHES MAXIMUM
OVERALL HEIGHT: 0.500 INCHES MAXIMUM
OVERALL LENGTH: 0.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
Related Searches:
5082-3140
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006090749
NSN
5961-00-609-0749
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.400 INCHES NOMINAL
OVERALL LENGTH: 0.410 INCHES NOMINAL
OVERALL WIDTH: 0.120 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.75 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.120 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
5082-9515
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006090749
NSN
5961-00-609-0749
MFG
HEWLETT PACKARD CO
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.400 INCHES NOMINAL
OVERALL LENGTH: 0.410 INCHES NOMINAL
OVERALL WIDTH: 0.120 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.75 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.120 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
772883-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006090749
NSN
5961-00-609-0749
MFG
RAYTHEON COMPANY
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.400 INCHES NOMINAL
OVERALL LENGTH: 0.410 INCHES NOMINAL
OVERALL WIDTH: 0.120 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.75 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.120 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
1141678
HOLDER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961006092823
NSN
5961-00-609-2823
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
COAXIAL CONNECTOR SERIES DESIGNATION: BNC
INPUT CONTACT TYPE: MALE
INPUT TERMINAL TYPE: COAXIAL CABLE
OUTPUT CONTACT TYPE: FEMALE
OUTPUT TERMINAL TYPE: FLANGE
Related Searches:
1653951-2
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961006093202
NSN
5961-00-609-3202
1653951-2
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961006093202
NSN
5961-00-609-3202
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN MS2
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
DESIGN CONTROL REFERENCE: 1653951-2
MANUFACTURERS CODE: 56232
MATERIAL: SILICON
OVERALL HEIGHT: 1.500 INCHES NOMINAL
OVERALL LENGTH: 3.500 INCHES NOMINAL
OVERALL WIDTH: 1.562 INCHES NOMINAL
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: QUALITY ASSURANCE PER MIL-Q-21549B-SP24-1
Related Searches:
12-Z-13005-8116
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961006095414
NSN
5961-00-609-5414
12-Z-13005-8116
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961006095414
NSN
5961-00-609-5414
MFG
NAVAL ORDNANCE STANDARDS
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 12-Z-13005-8116
MANUFACTURERS CODE: 94135
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: METAL;294 VOLTS;0.7 AMPERES;3.630 IN. LG;2.500 IN. O/A H;1.562 IN. W;SINGLE PHASE BRIDGE
Related Searches:
1289931-10
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961006095414
NSN
5961-00-609-5414
1289931-10
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961006095414
NSN
5961-00-609-5414
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 12-Z-13005-8116
MANUFACTURERS CODE: 94135
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: METAL;294 VOLTS;0.7 AMPERES;3.630 IN. LG;2.500 IN. O/A H;1.562 IN. W;SINGLE PHASE BRIDGE
Related Searches:
4JA211CB1AD1
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961006095414
NSN
5961-00-609-5414
4JA211CB1AD1
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961006095414
NSN
5961-00-609-5414
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 12-Z-13005-8116
MANUFACTURERS CODE: 94135
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: METAL;294 VOLTS;0.7 AMPERES;3.630 IN. LG;2.500 IN. O/A H;1.562 IN. W;SINGLE PHASE BRIDGE
