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5961-00-433-9007

20 Products

61109

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961004339007

NSN

5961-00-433-9007

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61109

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961004339007

NSN

5961-00-433-9007

MFG

RCA CORP DISTRIBUTION AND SPECIAL PRODUCTS

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 70210
MFR SOURCE CONTROLLING REFERENCE: 944148-1
OVERALL LENGTH: 0.330 INCHES MINIMUM AND 0.505 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.544 INCHES MINIMUM AND 0.562 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG

JAN1N5417

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004337220

NSN

5961-00-433-7220

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JAN1N5417

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004337220

NSN

5961-00-433-7220

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 80.00 AMPERES MAXIMUM PEAK REVERSE SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N5417
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-411
OVERALL DIAMETER: 0.110 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
OVERALL LENGTH: 0.130 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/411 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.900 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

JAN1N5417A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004337220

NSN

5961-00-433-7220

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JAN1N5417A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004337220

NSN

5961-00-433-7220

MFG

ADELCO ELEKTRONIK GMBH

Description

CURRENT RATING PER CHARACTERISTIC: 80.00 AMPERES MAXIMUM PEAK REVERSE SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N5417
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-411
OVERALL DIAMETER: 0.110 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
OVERALL LENGTH: 0.130 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/411 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.900 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

SR523-A-420-200G

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004337220

NSN

5961-00-433-7220

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SR523-A-420-200G

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004337220

NSN

5961-00-433-7220

MFG

RAYTHEON SYSTEMS LTD

Description

CURRENT RATING PER CHARACTERISTIC: 80.00 AMPERES MAXIMUM PEAK REVERSE SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N5417
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-411
OVERALL DIAMETER: 0.110 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
OVERALL LENGTH: 0.130 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/411 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.900 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

UTR1419

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004337220

NSN

5961-00-433-7220

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UTR1419

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004337220

NSN

5961-00-433-7220

MFG

MICRO USPD INC

Description

CURRENT RATING PER CHARACTERISTIC: 80.00 AMPERES MAXIMUM PEAK REVERSE SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N5417
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-411
OVERALL DIAMETER: 0.110 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
OVERALL LENGTH: 0.130 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/411 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.900 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

ZL4026

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004337220

NSN

5961-00-433-7220

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ZL4026

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004337220

NSN

5961-00-433-7220

MFG

SAAB AB PUPL - ELECTRONIC DEFENCE SYSTEMS

Description

CURRENT RATING PER CHARACTERISTIC: 80.00 AMPERES MAXIMUM PEAK REVERSE SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N5417
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-411
OVERALL DIAMETER: 0.110 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
OVERALL LENGTH: 0.130 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/411 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.900 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

579R208H03

TRANSISTOR

NSN, MFG P/N

5961004337397

NSN

5961-00-433-7397

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579R208H03

TRANSISTOR

NSN, MFG P/N

5961004337397

NSN

5961-00-433-7397

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS

Description

CURRENT RATING PER CHARACTERISTIC: 0.50 AMPERES MAXIMUM BASE CURRENT, DC AND 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.352 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.25 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 70.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 8.2 MAXIMUM EMITTER TO BASE VOLTAGE, STATI

MHT4245

TRANSISTOR

NSN, MFG P/N

5961004337397

NSN

5961-00-433-7397

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MHT4245

TRANSISTOR

NSN, MFG P/N

5961004337397

NSN

5961-00-433-7397

MFG

SOLITRON DEVICES INC.

Description

CURRENT RATING PER CHARACTERISTIC: 0.50 AMPERES MAXIMUM BASE CURRENT, DC AND 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.352 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.25 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 70.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 8.2 MAXIMUM EMITTER TO BASE VOLTAGE, STATI

SP3609

TRANSISTOR

NSN, MFG P/N

5961004337397

NSN

5961-00-433-7397

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SP3609

TRANSISTOR

NSN, MFG P/N

5961004337397

NSN

5961-00-433-7397

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

CURRENT RATING PER CHARACTERISTIC: 0.50 AMPERES MAXIMUM BASE CURRENT, DC AND 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.352 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.25 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 70.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 8.2 MAXIMUM EMITTER TO BASE VOLTAGE, STATI

10174034

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004337789

NSN

5961-00-433-7789

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10174034

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004337789

NSN

5961-00-433-7789

MFG

U S ARMY AVIATION AND MISSILE COMMAND

Description

CURRENT RATING PER CHARACTERISTIC: -20.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC AND 0.10 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM REVERSE VOLTAGE, PEAK

1N3062

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004337789

NSN

5961-00-433-7789

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1N3062

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004337789

NSN

5961-00-433-7789

MFG

SEMITRONICS CORP

Description

CURRENT RATING PER CHARACTERISTIC: -20.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC AND 0.10 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM REVERSE VOLTAGE, PEAK

FDH9129

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004337789

NSN

5961-00-433-7789

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FDH9129

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004337789

NSN

5961-00-433-7789

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

CURRENT RATING PER CHARACTERISTIC: -20.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC AND 0.10 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM REVERSE VOLTAGE, PEAK

2539448-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004338588

NSN

5961-00-433-8588

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2539448-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004338588

NSN

5961-00-433-8588

MFG

NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER

UZ722-5

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004338588

NSN

5961-00-433-8588

View More Info

UZ722-5

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004338588

NSN

5961-00-433-8588

MFG

MICRO USPD INC

2540092

TRANSISTOR

NSN, MFG P/N

5961004338614

NSN

5961-00-433-8614

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2540092

TRANSISTOR

NSN, MFG P/N

5961004338614

NSN

5961-00-433-8614

MFG

NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER

Description

III END ITEM IDENTIFICATION: F-14A AIRCRAFT OPERATIONAL FLIGHT TRAINER
MANUFACTURERS CODE: 10001
MFR SOURCE CONTROLLING REFERENCE: 2540092
SPEC/STD CONTROLLING DATA:

2N3792

TRANSISTOR

NSN, MFG P/N

5961004338614

NSN

5961-00-433-8614

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2N3792

TRANSISTOR

NSN, MFG P/N

5961004338614

NSN

5961-00-433-8614

MFG

FREESCALE SEMICONDUCTOR INC.

Description

III END ITEM IDENTIFICATION: F-14A AIRCRAFT OPERATIONAL FLIGHT TRAINER
MANUFACTURERS CODE: 10001
MFR SOURCE CONTROLLING REFERENCE: 2540092
SPEC/STD CONTROLLING DATA:

67891116-1

TRANSISTOR

NSN, MFG P/N

5961004338614

NSN

5961-00-433-8614

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67891116-1

TRANSISTOR

NSN, MFG P/N

5961004338614

NSN

5961-00-433-8614

MFG

MOOG INC.

Description

III END ITEM IDENTIFICATION: F-14A AIRCRAFT OPERATIONAL FLIGHT TRAINER
MANUFACTURERS CODE: 10001
MFR SOURCE CONTROLLING REFERENCE: 2540092
SPEC/STD CONTROLLING DATA:

7215

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961004339007

NSN

5961-00-433-9007

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7215

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961004339007

NSN

5961-00-433-9007

MFG

GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 70210
MFR SOURCE CONTROLLING REFERENCE: 944148-1
OVERALL LENGTH: 0.330 INCHES MINIMUM AND 0.505 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.544 INCHES MINIMUM AND 0.562 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG

944148-1

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961004339007

NSN

5961-00-433-9007

View More Info

944148-1

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961004339007

NSN

5961-00-433-9007

MFG

HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE - TORRANCE

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 70210
MFR SOURCE CONTROLLING REFERENCE: 944148-1
OVERALL LENGTH: 0.330 INCHES MINIMUM AND 0.505 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.544 INCHES MINIMUM AND 0.562 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG

SC265E

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961004339007

NSN

5961-00-433-9007

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SC265E

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961004339007

NSN

5961-00-433-9007

MFG

SEMITRONICS CORP

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 70210
MFR SOURCE CONTROLLING REFERENCE: 944148-1
OVERALL LENGTH: 0.330 INCHES MINIMUM AND 0.505 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.544 INCHES MINIMUM AND 0.562 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG