Featured Products

My Quote Request

No products added yet

5961-00-070-7024

20 Products

1N23F

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000707024

NSN

5961-00-070-7024

View More Info

1N23F

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000707024

NSN

5961-00-070-7024

MFG

KEMTRON ELECTRON PRODUCTS INC

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.240 INCHES MAXIMUM
OVERALL LENGTH: 0.199 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 CASE AND 1 FERRULE
TEST DATA DOCUMENT: 10001-2468838 DRAWING

2468838-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000707024

NSN

5961-00-070-7024

View More Info

2468838-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000707024

NSN

5961-00-070-7024

MFG

NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.240 INCHES MAXIMUM
OVERALL LENGTH: 0.199 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 CASE AND 1 FERRULE
TEST DATA DOCUMENT: 10001-2468838 DRAWING

184SPA144

TRANSISTOR

NSN, MFG P/N

5961000707082

NSN

5961-00-070-7082

View More Info

184SPA144

TRANSISTOR

NSN, MFG P/N

5961000707082

NSN

5961-00-070-7082

MFG

SOLITRON DEVICES INC.

Description

CURRENT RATING PER CHARACTERISTIC: 0.50 AMPERES MAXIMUM BASE CURRENT, DC AND 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.352 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.25 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 97942-579R208 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 70.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPE

579R208H02

TRANSISTOR

NSN, MFG P/N

5961000707082

NSN

5961-00-070-7082

View More Info

579R208H02

TRANSISTOR

NSN, MFG P/N

5961000707082

NSN

5961-00-070-7082

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS

Description

CURRENT RATING PER CHARACTERISTIC: 0.50 AMPERES MAXIMUM BASE CURRENT, DC AND 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.352 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.25 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 97942-579R208 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 70.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPE

SP1579

TRANSISTOR

NSN, MFG P/N

5961000707082

NSN

5961-00-070-7082

View More Info

SP1579

TRANSISTOR

NSN, MFG P/N

5961000707082

NSN

5961-00-070-7082

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

CURRENT RATING PER CHARACTERISTIC: 0.50 AMPERES MAXIMUM BASE CURRENT, DC AND 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.352 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.25 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 97942-579R208 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 70.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPE

579R499H01

TRANSISTOR

NSN, MFG P/N

5961000707109

NSN

5961-00-070-7109

View More Info

579R499H01

TRANSISTOR

NSN, MFG P/N

5961000707109

NSN

5961-00-070-7109

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS

Description

CURRENT RATING PER CHARACTERISTIC: 0.50 AMPERES MAXIMUM BASE CURRENT, DC AND 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.348 INCHES NOMINAL
OVERALL LENGTH: 0.373 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.432 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 30.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 WIRE HOOK AND 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 8.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC,

MHT6394

TRANSISTOR

NSN, MFG P/N

5961000707109

NSN

5961-00-070-7109

View More Info

MHT6394

TRANSISTOR

NSN, MFG P/N

5961000707109

NSN

5961-00-070-7109

MFG

SOLITRON DEVICES INC.

Description

CURRENT RATING PER CHARACTERISTIC: 0.50 AMPERES MAXIMUM BASE CURRENT, DC AND 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.348 INCHES NOMINAL
OVERALL LENGTH: 0.373 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.432 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 30.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 WIRE HOOK AND 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 8.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC,

SP2724

TRANSISTOR

NSN, MFG P/N

5961000707109

NSN

5961-00-070-7109

View More Info

SP2724

TRANSISTOR

NSN, MFG P/N

5961000707109

NSN

5961-00-070-7109

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

CURRENT RATING PER CHARACTERISTIC: 0.50 AMPERES MAXIMUM BASE CURRENT, DC AND 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.348 INCHES NOMINAL
OVERALL LENGTH: 0.373 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.432 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 30.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 WIRE HOOK AND 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 8.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC,

2W3749

TRANSISTOR

NSN, MFG P/N

5961000707110

NSN

5961-00-070-7110

View More Info

2W3749

TRANSISTOR

NSN, MFG P/N

5961000707110

NSN

5961-00-070-7110

MFG

SOLITRON DEVICES INC.

Description

CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.424 INCHES NOMINAL
OVERALL LENGTH: 0.373 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.432 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.2 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 1.2 MAXIMUM INTERBASE VOLTAGE AND 0.25 MAXIMUM EMITTER TO BASE VOLTAGE, DC

579R499H02

TRANSISTOR

NSN, MFG P/N

5961000707110

NSN

5961-00-070-7110

View More Info

579R499H02

TRANSISTOR

NSN, MFG P/N

5961000707110

NSN

5961-00-070-7110

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS

Description

CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.424 INCHES NOMINAL
OVERALL LENGTH: 0.373 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.432 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.2 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 1.2 MAXIMUM INTERBASE VOLTAGE AND 0.25 MAXIMUM EMITTER TO BASE VOLTAGE, DC

SP2725

TRANSISTOR

NSN, MFG P/N

5961000707110

NSN

5961-00-070-7110

View More Info

SP2725

TRANSISTOR

NSN, MFG P/N

5961000707110

NSN

5961-00-070-7110

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.424 INCHES NOMINAL
OVERALL LENGTH: 0.373 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.432 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.2 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 1.2 MAXIMUM INTERBASE VOLTAGE AND 0.25 MAXIMUM EMITTER TO BASE VOLTAGE, DC

579R499H03

TRANSISTOR

NSN, MFG P/N

5961000707111

NSN

5961-00-070-7111

View More Info

579R499H03

TRANSISTOR

NSN, MFG P/N

5961000707111

NSN

5961-00-070-7111

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS

Description

CURRENT RATING PER CHARACTERISTIC: 75.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.424 INCHES NOMINAL
OVERALL LENGTH: 0.373 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.432 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 8.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

MHT6453

TRANSISTOR

NSN, MFG P/N

5961000707111

NSN

5961-00-070-7111

View More Info

MHT6453

TRANSISTOR

NSN, MFG P/N

5961000707111

NSN

5961-00-070-7111

MFG

SOLITRON DEVICES INC.

Description

CURRENT RATING PER CHARACTERISTIC: 75.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.424 INCHES NOMINAL
OVERALL LENGTH: 0.373 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.432 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 8.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

SP3543

TRANSISTOR

NSN, MFG P/N

5961000707111

NSN

5961-00-070-7111

View More Info

SP3543

TRANSISTOR

NSN, MFG P/N

5961000707111

NSN

5961-00-070-7111

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

CURRENT RATING PER CHARACTERISTIC: 75.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.424 INCHES NOMINAL
OVERALL LENGTH: 0.373 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.432 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 8.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

930C567P1

TRANSISTOR

NSN, MFG P/N

5961000707112

NSN

5961-00-070-7112

View More Info

930C567P1

TRANSISTOR

NSN, MFG P/N

5961000707112

NSN

5961-00-070-7112

MFG

BAE SYSTEMS CONTROLS INC.

Description

ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.138 INCHES
OVERALL DIAMETER: 0.450 INCHES NOMINAL
OVERALL LENGTH: 0.205 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 3 UNINSULATED WIRE LEAD
THREAD SERIES DESIGNATOR: UNC

SP4374

TRANSISTOR

NSN, MFG P/N

5961000707112

NSN

5961-00-070-7112

View More Info

SP4374

TRANSISTOR

NSN, MFG P/N

5961000707112

NSN

5961-00-070-7112

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.138 INCHES
OVERALL DIAMETER: 0.450 INCHES NOMINAL
OVERALL LENGTH: 0.205 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 3 UNINSULATED WIRE LEAD
THREAD SERIES DESIGNATOR: UNC

577R994H02

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000707484

NSN

5961-00-070-7484

View More Info

577R994H02

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000707484

NSN

5961-00-070-7484

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS

Description

CURRENT RATING PER CHARACTERISTIC: 175.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 125.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

CD12646

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000707484

NSN

5961-00-070-7484

View More Info

CD12646

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000707484

NSN

5961-00-070-7484

MFG

TELCOM SEMICONDUCTOR INC

Description

CURRENT RATING PER CHARACTERISTIC: 175.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 125.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

FD3336

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000707484

NSN

5961-00-070-7484

View More Info

FD3336

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000707484

NSN

5961-00-070-7484

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

CURRENT RATING PER CHARACTERISTIC: 175.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 125.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

577R795H05

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000707496

NSN

5961-00-070-7496

View More Info

577R795H05

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000707496

NSN

5961-00-070-7496

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS

Description

CURRENT RATING PER CHARACTERISTIC: 1900.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.192 INCHES
OVERALL LENGTH: 0.405 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM NOMINAL REGULATOR VOLTAGE