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5961-00-050-2945

20 Products

196009P35

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000502945

NSN

5961-00-050-2945

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196009P35

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000502945

NSN

5961-00-050-2945

MFG

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I

Description

CURRENT RATING PER CHARACTERISTIC: 3.70 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.417 INCHES NOMINAL
OVERALL LENGTH: 0.256 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.940 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

CA1043

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961000502590

NSN

5961-00-050-2590

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CA1043

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961000502590

NSN

5961-00-050-2590

MFG

MICRO USPD INC

Description

CURRENT RATING PER CHARACTERISTIC: 1.25 AMPERES MAXIMUM ON-STATE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-9
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.312 INCHES NOMINAL
OVERALL LENGTH: 0.230 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: INTERNAL JUNCTION CONFIGURATION ARRANGEMENT PNPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE

1029AS336

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961000502591

NSN

5961-00-050-2591

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1029AS336

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961000502591

NSN

5961-00-050-2591

MFG

NAVAL AIR SYSTEMS COMMAND

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 1.50 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 REVERSE VOLTAGE, PEAK
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: SILICON
OVERALL HEIGHT: 0.110 INCHES MAXIMUM
OVERALL LENGTH: 0.265 INCHES MAXIMUM
OVERALL WIDTH: 0.265 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD

10585-004

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961000502591

NSN

5961-00-050-2591

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10585-004

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961000502591

NSN

5961-00-050-2591

MFG

ASTRONAUTICS CORPORATION OF AMERICA

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 1.50 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 REVERSE VOLTAGE, PEAK
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: SILICON
OVERALL HEIGHT: 0.110 INCHES MAXIMUM
OVERALL LENGTH: 0.265 INCHES MAXIMUM
OVERALL WIDTH: 0.265 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD

14002-0010

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961000502591

NSN

5961-00-050-2591

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14002-0010

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961000502591

NSN

5961-00-050-2591

MFG

HONEYWELL INTERNATIONAL INC DBA HONEYWELL

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 1.50 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 REVERSE VOLTAGE, PEAK
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: SILICON
OVERALL HEIGHT: 0.110 INCHES MAXIMUM
OVERALL LENGTH: 0.265 INCHES MAXIMUM
OVERALL WIDTH: 0.265 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD

17-0177

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961000502591

NSN

5961-00-050-2591

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17-0177

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961000502591

NSN

5961-00-050-2591

MFG

TELAUTOGRAPH CORP SUB OF ARDEN MAYFAIR CORP

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 1.50 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 REVERSE VOLTAGE, PEAK
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: SILICON
OVERALL HEIGHT: 0.110 INCHES MAXIMUM
OVERALL LENGTH: 0.265 INCHES MAXIMUM
OVERALL WIDTH: 0.265 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD

910638-11

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961000502591

NSN

5961-00-050-2591

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910638-11

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961000502591

NSN

5961-00-050-2591

MFG

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC.

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 1.50 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 REVERSE VOLTAGE, PEAK
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: SILICON
OVERALL HEIGHT: 0.110 INCHES MAXIMUM
OVERALL LENGTH: 0.265 INCHES MAXIMUM
OVERALL WIDTH: 0.265 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD

MDA920A-4

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961000502591

NSN

5961-00-050-2591

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MDA920A-4

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961000502591

NSN

5961-00-050-2591

MFG

FREESCALE SEMICONDUCTOR INC.

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 1.50 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 REVERSE VOLTAGE, PEAK
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: SILICON
OVERALL HEIGHT: 0.110 INCHES MAXIMUM
OVERALL LENGTH: 0.265 INCHES MAXIMUM
OVERALL WIDTH: 0.265 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD

023-00014

TRANSISTOR

NSN, MFG P/N

5961000502592

NSN

5961-00-050-2592

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023-00014

TRANSISTOR

NSN, MFG P/N

5961000502592

NSN

5961-00-050-2592

MFG

DIGITECH INDUSTRIES INC

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.500 INCHES MAXIMUM
OVERALL LENGTH: 0.340 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 142.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN

2N3054

TRANSISTOR

NSN, MFG P/N

5961000502592

NSN

5961-00-050-2592

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2N3054

TRANSISTOR

NSN, MFG P/N

5961000502592

NSN

5961-00-050-2592

MFG

INTERSIL CORPORATION

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.500 INCHES MAXIMUM
OVERALL LENGTH: 0.340 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 142.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN

911138

TRANSISTOR

NSN, MFG P/N

5961000502592

NSN

5961-00-050-2592

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911138

TRANSISTOR

NSN, MFG P/N

5961000502592

NSN

5961-00-050-2592

MFG

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC.

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.500 INCHES MAXIMUM
OVERALL LENGTH: 0.340 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 142.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN

MJ4101

TRANSISTOR

NSN, MFG P/N

5961000502592

NSN

5961-00-050-2592

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MJ4101

TRANSISTOR

NSN, MFG P/N

5961000502592

NSN

5961-00-050-2592

MFG

FREESCALE SEMICONDUCTOR INC.

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.500 INCHES MAXIMUM
OVERALL LENGTH: 0.340 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 142.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN

STI-4101

TRANSISTOR

NSN, MFG P/N

5961000502592

NSN

5961-00-050-2592

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STI-4101

TRANSISTOR

NSN, MFG P/N

5961000502592

NSN

5961-00-050-2592

MFG

SEMICONDUCTOR TECHNOLOGY INC DBA S T I

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.500 INCHES MAXIMUM
OVERALL LENGTH: 0.340 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 142.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN

1N4772A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000502610

NSN

5961-00-050-2610

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1N4772A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000502610

NSN

5961-00-050-2610

MFG

SEMITRONICS CORP

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES NOMINAL
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.3 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 9.1 MAXIMUM NOMINAL REGULATOR VOLTAGE

B531001058

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000502610

NSN

5961-00-050-2610

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B531001058

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000502610

NSN

5961-00-050-2610

MFG

KEARFOTT CORPORATION DBA KEARFOTT DIV GUIDANCE AND NAVIGATION DIVISION

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES NOMINAL
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.3 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 9.1 MAXIMUM NOMINAL REGULATOR VOLTAGE

DT81021A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000502610

NSN

5961-00-050-2610

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DT81021A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000502610

NSN

5961-00-050-2610

MFG

MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES NOMINAL
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.3 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 9.1 MAXIMUM NOMINAL REGULATOR VOLTAGE

SZ11969H

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000502610

NSN

5961-00-050-2610

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SZ11969H

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000502610

NSN

5961-00-050-2610

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES NOMINAL
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.3 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 9.1 MAXIMUM NOMINAL REGULATOR VOLTAGE

B531001095

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000502611

NSN

5961-00-050-2611

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B531001095

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000502611

NSN

5961-00-050-2611

MFG

KEARFOTT CORPORATION DBA KEARFOTT DIV GUIDANCE AND NAVIGATION DIVISION

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM PEAK REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 165.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 MAXIMUM REVERSE VOLTAGE, DC

PS5830

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000502611

NSN

5961-00-050-2611

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PS5830

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000502611

NSN

5961-00-050-2611

MFG

TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM PEAK REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 165.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 MAXIMUM REVERSE VOLTAGE, DC

1N3813B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000502945

NSN

5961-00-050-2945

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1N3813B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000502945

NSN

5961-00-050-2945

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 3.70 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.417 INCHES NOMINAL
OVERALL LENGTH: 0.256 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.940 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM NOMINAL REGULATOR VOLTAGE