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5961-00-117-6478
20 Products
1N2041
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001176478
NSN
5961-00-117-6478
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
OVERALL HEIGHT: 0.335 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.438 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
Related Searches:
MP4906133
TRANSISTOR
NSN, MFG P/N
5961001173818
NSN
5961-00-117-3818
MFG
DYNASCIENCES CORP INSTRUMENT SYSTEMS DIV
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
2930
PARTS KIT,HOLDER SE
NSN, MFG P/N
5961001173906
NSN
5961-00-117-3906
MFG
AIRTEC INC DBA AIRTEC-UNIQUE
Description
III END ITEM IDENTIFICATION: TRAINING DEVICES
MANUFACTURERS CODE: 22525
MFR SOURCE CONTROLLING REFERENCE: 61770-1
SPEC/STD CONTROLLING DATA:
Related Searches:
61770-1
PARTS KIT,HOLDER SE
NSN, MFG P/N
5961001173906
NSN
5961-00-117-3906
MFG
INSTRUMENTS AND FLIGHT RESEARCH INC.
Description
III END ITEM IDENTIFICATION: TRAINING DEVICES
MANUFACTURERS CODE: 22525
MFR SOURCE CONTROLLING REFERENCE: 61770-1
SPEC/STD CONTROLLING DATA:
Related Searches:
472-0982-002
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961001176160
NSN
5961-00-117-6160
472-0982-002
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961001176160
NSN
5961-00-117-6160
MFG
BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
MANUFACTURERS CODE: 94756
MFR SOURCE CONTROLLING REFERENCE: 472-0982-002
SPEC/STD CONTROLLING DATA:
Related Searches:
SA1476
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961001176160
NSN
5961-00-117-6160
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
MANUFACTURERS CODE: 94756
MFR SOURCE CONTROLLING REFERENCE: 472-0982-002
SPEC/STD CONTROLLING DATA:
Related Searches:
SP12079
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961001176160
NSN
5961-00-117-6160
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
MANUFACTURERS CODE: 94756
MFR SOURCE CONTROLLING REFERENCE: 472-0982-002
SPEC/STD CONTROLLING DATA:
Related Searches:
TQSA317A
TRANSISTOR
NSN, MFG P/N
5961001176369
NSN
5961-00-117-6369
MFG
COMTEC INFORMATION SYSTEMS INC DIGITRONICS DIV
Description
TRANSISTOR
Related Searches:
4912961-00
TRANSISTOR
NSN, MFG P/N
5961001176401
NSN
5961-00-117-6401
MFG
CULVER CITY HALL
Description
TRANSISTOR
Related Searches:
4912596-01
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961001176419
NSN
5961-00-117-6419
4912596-01
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961001176419
NSN
5961-00-117-6419
MFG
CULVER CITY HALL
Description
RECTIFIER,SEMICONDUCTOR DEVICE
Related Searches:
3010810-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001176425
NSN
5961-00-117-6425
3010810-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001176425
NSN
5961-00-117-6425
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 80.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL LENGTH: 1.125 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -30.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
GS54
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001176425
NSN
5961-00-117-6425
MFG
ITT SEMICONDUCTORS DIV
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 80.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL LENGTH: 1.125 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -30.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
5012713-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001176426
NSN
5961-00-117-6426
5012713-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001176426
NSN
5961-00-117-6426
MFG
CULVER CITY HALL
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
FD403
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001176430
NSN
5961-00-117-6430
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
B52-1193
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961001176448
NSN
5961-00-117-6448
MFG
SACRAMENTO AIR LOGISTICS CENTER SM-ALC/LIIL
Description
III END ITEM IDENTIFICATION: GENERATORS AND GENERATOR SETS,GROUND
Related Searches:
H726
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961001176448
NSN
5961-00-117-6448
MFG
SOLITRON DEVICES INC.
Description
III END ITEM IDENTIFICATION: GENERATORS AND GENERATOR SETS,GROUND
Related Searches:
5013611-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001176470
NSN
5961-00-117-6470
5013611-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001176470
NSN
5961-00-117-6470
MFG
CULVER CITY HALL
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.240 INCHES NOMINAL
OVERALL LENGTH: 0.405 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
5013772-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001176470
NSN
5961-00-117-6470
5013772-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001176470
NSN
5961-00-117-6470
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.240 INCHES NOMINAL
OVERALL LENGTH: 0.405 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
66-9680
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001176470
NSN
5961-00-117-6470
MFG
INTERNATIONAL RECTIFIER CORPORATION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.240 INCHES NOMINAL
OVERALL LENGTH: 0.405 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
5013621-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001176471
NSN
5961-00-117-6471
5013621-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001176471
NSN
5961-00-117-6471
MFG
CULVER CITY HALL
Description
SEMICONDUCTOR DEVICE,DIODE
